金属有机物化学气相沉积法生长Ga2(1-χ)In2χO3薄膜的结构及光电性能研究

采用金属有机物化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上制备出了Ga2(1-χ)In2χO3(χ=0.1-0.9)薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明:当In组分χ=0.2时,样品为单斜β-Ga2O3,结构;χ=0.5的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善,由非晶结构转变为具有(222)单一取向的立方In2O3结构;对于χ=0.8,薄膜为立方In2O3,结构,退火后薄膜的晶体质量得到提高.在可见光区薄膜本身的透过率均达到了85%以上,带隙宽度随样品中Ga含量的改变在3.76-4.43 eV之间变化,且经退火处理后带隙宽度明显增大.     

蓝宝石火花塞

在如何提高火花塞的工作质量方面有多种方法,但是其中最重要的一个问题还没有得到解决,那就是火花塞工作的热学模型问题。理想的火花塞应该能在点火的瞬间被立刻加热,并且在接下来的电脉冲过程中迅速冷却,由此在热量的存储与散发之间取得平衡,以避免自点火。本文力图展示一种具有自动调节源于点火区域热流能力的火花塞,其技术的关键是顶部绝缘体材料,它是由蓝宝石单晶制作,而非传统的氧化铝陶瓷。     

100 GPa以上冲击压力区蓝宝石的近红外发光

采用三层夹心靶结构,利用铜箔与抛光蓝宝石之间良好的接触条件,使用辐射式高温计观测到c取向蓝宝石在130～172 GPa冲击高压下的红外辐射。实验信号显示,位于近红外波段的蓝宝石冲击辐射随着压力的增加而变强;强度对比显示,蓝宝石的近红外发射强于界面发射。基于冲击作用下滑移带的温度高于冲击平衡温度的概念,将蓝宝石体内滑移带温度作为蓝宝石发射温度代入线性吸收公式,从而将蓝宝石发光强度的增加和界面冷却引起的发光强度下降相结合;将得到的界面一蓝宝石发射强度数值模拟结果与实验结果相比较,发现二者能够重合。由实验信号的上升趋势得到三个压力下0.85μm近红外波长处蓝宝石的冲击吸收系数数值。     

An All-Solid-State Tunable Dual-Wavelength Ti：Sapphire Laser with Quasi-Continuous-Wave Outputs

A high power dual-wavelength Ti：sapphire laser system with wide turning range and high efficiency is described, which consists of two prism-dispersed resonators pumped by an a11-solid-state frequency-doubled Nd：YAG laser. Tunable dual-wavelength outputs, with one wavelength range from 750nm to 795nm and the other from 80Ohm to 850nm, have been demonstrated. With a pump power of 23 W at 532nm, a repetition rate of 6.5kHz and a pulse width of 67.6ns, the maximum dual-wavelength output power of 5.6 W at 785.3nm and 812.1 run, with a pulse width of 17.2ns and a line width of 2nm, has been achieved, leading to an optical-to-optical conversion efficiency of 24.4%.     

声表面波器件用〈110〉取向ZnO薄膜的MOCVD生长

Zn O是具有纤锌矿晶体结构的多功能半导体材料 ,它具有 3 .3 7e V的禁带宽度和高达 60 me V的激子束缚能 ,是很有希望的紫外发光材料 .由于具有 c轴的择优取向性 ,因此目前人们的注意力主要集中在对 c轴取向 Zn O薄膜的特性研究上 [1～ 3] .但其它取向的 Zn O薄膜也可在某些衬底的特定面上 ,通过特定的条件进行生长 ,如〈1 1 0〉取向的 Zn O薄膜可在特定的条件下生长在蓝宝石 R面衬底上[4～ 7] .由于 (1 1 0 )面的 Zn O薄膜具有一些 c轴取向薄膜所不具备或无法比拟的特性 ,如 :机电耦合系数高达6% (C面薄膜的机电耦合系数却不足 1 % )…     

Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101～8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.     

Performance of gain-switched all-solid-state quasi-continuous-wave tunable Ti:sapphire laser system

We have made a gain-switched all-solid-state quasi-continuous-wave （QCW） tunable Ti：sapphire laser system, which is pumped by a 532 nm intracavity frequency-doubled Nd：YAG laser. Based on the theory of gain-switching and the study on the influencing factors of the output pulse width, an effective method for obtaining high power and narrow pulse width output is proposed. Through deliberately designing the pump source and the resonator of the Ti：sapphire laser, when the repetition rate is 6 kHz and the length of the cavity is 220 mm, at an incident pump power of 22 W, the tunable Ti：sapphire laser from 700 to 950nm can be achieved. It has a maximum average output power of 5.6W at 800nm and the pulse width of 13.2 ns, giving an optical conversion efficiency of 25.5% from the 532 mn pump laser to the Ti：sapphire laser.     

从室温到1800℃全程测温的蓝宝石单晶光纤温度传感器

表述了从室温到１８００℃测温范围的全程测温的蓝宝石单晶光纤温度传感器。该光纤传感器综合了光纤辐射测温技术和光纤荧光测温技术的特点,利用特殊生长的端部Ｃｒ＾３＋离子掺杂的蓝宝石单 光纤,使两者有机地结合实现用单一光纤传感头达到大范围的温度测量,介绍了端部掺杂的蓝宝石单晶光纤的生长方法,分析了它的荧光温度特性、光纤传感头上荧光信号与热辐射信号的相互干扰以及光纤温度传感器的系统结构和工作原理,给出了实验     

LIGO计划用大尺寸蓝宝石晶体光学均匀性和弱吸收获得进展

报道了113mm× 70mm蓝宝石晶体块的光学加工精度、光学均匀性和弱吸收等方面研究所取得的最新进展。晶体整个表面加工精度达到 3个光圈 (峰谷值约为 1 6 6 6λ) ;晶体的透过波前畸变为 1个光圈 (峰谷值约为0 5 84λ) ;在紫外波段的透过大于 80 % ,可见及红外光区的透过大于 86 % ;晶体的弱光吸收系数为 35× 10 - 6 cm～ 6 5× 10 - 6 cm。     

退火对ZnO薄膜质量的影响

用金属有机化学气相沉积法（MOCVD）在蓝宝石（0001）衬底上制备了c轴取向的高质量的ZnO薄膜,通过在生长温度下氧气和氮气中退火处理的比较,研究了退火对ZnO薄膜结构和发光特性的影响。通过X射线衍射测量得知,经过氮气和氧气退火都可以使其002峰增强,且在氧退火中表现得尤为明显。光致发光测量发现氮气中退火的ZnO薄膜的紫外发光峰明显增强,而深能级发光峰明显减弱;而氧气中退火的ZnO薄膜的紫外发光峰略有减弱,而深能级峰显著增强。