蓝宝石R面上ZnO薄膜的NH3掺杂研究

以NH₃为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH₃流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高电阻率,并对其光电子能谱进行了研究。     

100 GPa以上冲击压力区蓝宝石的近红外发光

采用三层夹心靶结构,利用铜箔与抛光蓝宝石之间良好的接触条件,使用辐射式高温计观测到c取向蓝宝石在130～172 GPa冲击高压下的红外辐射。实验信号显示,位于近红外波段的蓝宝石冲击辐射随着压力的增加而变强;强度对比显示,蓝宝石的近红外发射强于界面发射。基于冲击作用下滑移带的温度高于冲击平衡温度的概念,将蓝宝石体内滑移带温度作为蓝宝石发射温度代入线性吸收公式,从而将蓝宝石发光强度的增加和界面冷却引起的发光强度下降相结合;将得到的界面一蓝宝石发射强度数值模拟结果与实验结果相比较,发现二者能够重合。由实验信号的上升趋势得到三个压力下0.85μm近红外波长处蓝宝石的冲击吸收系数数值。     

An All-Solid-State Tunable Dual-Wavelength Ti：Sapphire Laser with Quasi-Continuous-Wave Outputs

A high power dual-wavelength Ti：sapphire laser system with wide turning range and high efficiency is described, which consists of two prism-dispersed resonators pumped by an a11-solid-state frequency-doubled Nd：YAG laser. Tunable dual-wavelength outputs, with one wavelength range from 750nm to 795nm and the other from 80Ohm to 850nm, have been demonstrated. With a pump power of 23 W at 532nm, a repetition rate of 6.5kHz and a pulse width of 67.6ns, the maximum dual-wavelength output power of 5.6 W at 785.3nm and 812.1 run, with a pulse width of 17.2ns and a line width of 2nm, has been achieved, leading to an optical-to-optical conversion efficiency of 24.4%.     

Performance of gain-switched all-solid-state quasi-continuous-wave tunable Ti:sapphire laser system

We have made a gain-switched all-solid-state quasi-continuous-wave （QCW） tunable Ti：sapphire laser system, which is pumped by a 532 nm intracavity frequency-doubled Nd：YAG laser. Based on the theory of gain-switching and the study on the influencing factors of the output pulse width, an effective method for obtaining high power and narrow pulse width output is proposed. Through deliberately designing the pump source and the resonator of the Ti：sapphire laser, when the repetition rate is 6 kHz and the length of the cavity is 220 mm, at an incident pump power of 22 W, the tunable Ti：sapphire laser from 700 to 950nm can be achieved. It has a maximum average output power of 5.6W at 800nm and the pulse width of 13.2 ns, giving an optical conversion efficiency of 25.5% from the 532 mn pump laser to the Ti：sapphire laser.     

蓝宝石火花塞

在如何提高火花塞的工作质量方面有多种方法,但是其中最重要的一个问题还没有得到解决,那就是火花塞工作的热学模型问题。理想的火花塞应该能在点火的瞬间被立刻加热,并且在接下来的电脉冲过程中迅速冷却,由此在热量的存储与散发之间取得平衡,以避免自点火。本文力图展示一种具有自动调节源于点火区域热流能力的火花塞,其技术的关键是顶部绝缘体材料,它是由蓝宝石单晶制作,而非传统的氧化铝陶瓷。     

从室温到1800℃全程测温的蓝宝石单晶光纤温度传感器

表述了从室温到１８００℃测温范围的全程测温的蓝宝石单晶光纤温度传感器。该光纤传感器综合了光纤辐射测温技术和光纤荧光测温技术的特点,利用特殊生长的端部Ｃｒ＾３＋离子掺杂的蓝宝石单 光纤,使两者有机地结合实现用单一光纤传感头达到大范围的温度测量,介绍了端部掺杂的蓝宝石单晶光纤的生长方法,分析了它的荧光温度特性、光纤传感头上荧光信号与热辐射信号的相互干扰以及光纤温度传感器的系统结构和工作原理,给出了实验     

Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101～8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.     

大口径掺钛蓝宝石晶体放大的实验研究

 分析了口径为80 mm的钛宝石晶体内的增益特性，对大口径钛宝石晶体中的泵浦光能量密度和泵浦光口径进行了优化设计。对于80 mm×17 mm的晶体，最佳工作光束口径为55 mm，泵浦能量为50 J；对于80 mm×30 mm的晶体，最佳工作光束口径为60 mm，泵浦能量为90 J，且其横向小信号增益远小于80 mm×17 mm晶体的。对影响大口径钛宝石晶体放大的横向放大自发辐射（ASE）和寄生振荡采用折射率匹配的包边技术进行了抑制。实验表明，该方法把允许横向增益从13提高到了2 100。实验系统为100 J绿光台面泵浦激光器，100 TW主放大器采用四程空间构型放大光路。80 mm×17 mm钛宝石晶体c轴水平放置，泵浦光和主激光均为水平偏振。当以泵浦光能量为49 J对主放大器进行双端泵浦，注入信号光能量为1.2 J，光束口径60 mm时，获得了14.2 J的放大光输出和286 TW的最高峰值功率。     

AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff- wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1× 10^-6A/cm^2 at the reverse bias of 5 V. The specific detectivity D＊ is estimated to be 3.3 × 10^12cmHz^1/2 W^-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.     

高温退火对蓝宝石基片的表面形貌和对CeO缓冲层以及Tl-2212超导薄膜长的影响

研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化,以及它对CeO2缓冲层和T1-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明,在流动氧环境中1000℃温度下退火,蓝宝石(1102)的表面首先局部区域形成台阶结构,然后表面形成叠层台阶结构,随着退火时间的延长.表面发生了台阶合并现象,表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明,通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石(1102)基片上可以生长出具有面内取向的CeO2(001)缓冲层.在具有缓冲层的蓝宝石基片上可以制作出高质量c轴织构的外延11-2212超导薄膜,其临界转变温度(Tc)为104.7 K,液氮温度下临界电流密度(Jc)达到3.5 MA/cm2,微波表面电阻R(77 K,10 GHz)约为390μΩ.