给定极点的有理函数插值序列的收敛性

设Γ∈Ｃ（１，α），α＞０．Ｇ是复平面上以Γ为边界的有界单连通区域．本文考虑了极点位于G外部，以广义Ｆａｂｅｒ-Ｄzｒｂａsｊａｎ有理函数的零点为插值结点的Ｌａｇｒａｎｇｅ插值有理函数序列对Ａ（G）和Ｅ^ｑ（Ｇ）（１＜ｑ＜＋∞）中函数的一致逼近和平均逼近阶的估计．     

反相高效液相法测定苁蓉酒中松果菊苷的含量

 采用反相高效液相法测定苁蓉酒中松果菊苷的含量。该法能有效地排除复方中其他组分的干扰,使峰得到完全分离。条件:固定相为C18;流动相为乙腈 1%的乙酸水溶液(体积比为14∶86);柱温25℃;紫外检测波长为330nm。结果表明,在0 52μg～2 60μg内松果菊苷的进样量与其峰面积呈良好的线性关系;样品的加标回收率为99 7%。该方法快速、简便、结果稳定,重现性好,是一种有效的质量检验方法。     

反相高效液相色谱法测定唾液和血清咖啡因浓度及药代动力学参数的研究

用反相高效液相色谱法测定４０只Ｗｉｓｔａｒ雄性大鼠和２４例健康人静注咖啡因（ＣＡＦ）ｌｍｇ／ｋｇ或口服４ｍｇ／ｋｇ后血清及唾液ＣＡＦ浓度,并根据血药或唾药时间数据计算其药动学参数。大鼠的血夯时间数据符合二室开放模型。各肝损害组与正常组（每组１０只）的ｔ＿（１／２）β,Ｖ＿ｃ,Ｋ＿（２１）差异显著（均Ｐ＜０．０１＝。提示血清ＣＡＦ药动学参数可定量检测肝代谢功能。２４例健康人唾液与血清ＣＡＦ浓度及ｔ＿（ｌ／２）均有良好相关性（ｒ＝０．９７２２,ｎ＝１２０,Ｐ＜０．００１;γ＝０．９９５５,Ｐ＜０．００１。     

Superconducting phase qubits with shadow-evaporated Josephson junctions

We develop a fabrication process for the superconducting phase qubits in which Josephson junctions for both the qubit and superconducting quantum interference device(SQUID) detector are prepared by shadow evaporation with a suspended bridge. Al junctions with areas as small as 0.05 μm~2 are fabricated for the qubit, in which the number of the decoherencecausing two-level systems(TLS) residing in the tunnel barrier and proportional to the junction area are greatly reduced. The measured energy spectrum shows no avoided crossing arising from coherent TLS in the experimentally reachable flux bias range of the phase qubit, which demonstrates the energy relaxation time T_1 and dephasing time T_φ on the order of 100 ns and 50 ns, respectively. We discuss several possible origins of decoherence from incoherent or weakly-coupled coherent TLS and further improvements of the qubit performance.     

高质量立方相ZnMgO的制备与紫外受激发射特性研究

利用脉冲激光沉积（PLD）设备在蓝宝石衬底上制备了高质量Zn_1-xMg_xO单晶薄膜,并对其结构和光学特性进行了深入细致的研究。通过能量衍射谱（EDS）确认Zn_1-xMg_xO薄膜的Mg组分为45%。在Zn_0.55Mg_0.45O薄膜的X射线衍射谱（XRD）中观测到了明显的位于36.67°的衍射峰,对应的是（111）晶向的立方相ZnMgO。从透射光谱中可以看出,Zn_0.55Mg_0.45O具有陡峭的吸收边,没有发生相分离,在透射电镜图谱中也得到了证实。该ZnMgO薄膜还表现出了优异的光学特性,在Zn_0.55Mg_0.45O材料体系中实现了峰位位于310 nm的紫外光泵浦受激发射,其激光发射的阈值仅为22 kW/cm²。     

二次函数图象的一个几何性质及应用

文[1]由二次函数的两点式导出了二次函数图象的一个几何性质,巧妙的探讨了抛物线弓形面积问题,本文换种思路给出这一几何性质的证明,并用它证明抛物线的一组性质,较常规解法显得既新颖又美妙.定理直线l与抛物线y=ax²(a>0)交于点A,B,点P在抛物线上,点C在直线AB上,PC//y轴,点A,B到直线PC的距离分别为,直线l的倾斜角为θ,斜率为k,则PC=amn=acos²θ·AC·CB=a/1+k²·AC·CB.     

反比例函数的一个性质及其推广

引子如图1,设P（m,n）是反比例函数y=x^k（k≠0）的图象上任意一点,PE⊥x轴,PF⊥y轴,E、F是垂足,则SPEOF=｜k｜．连结OP,     

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching＊

We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.     

Influence of Si doping on the structural and optical properties of InGaN epilayers

Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.     

评第41届IMO第2题

20 0 0年第 4 2届ＩＭＯ的第 2题是 :设ａ ,ｂ ,ｃ∈Ｒ ,且ａｂｃ =1.求证 :(ａ - 1 1ｂ) (ｂ - 1 1ｃ) (ｃ - 1 1ａ)≤ 1( 1)此题是一道陈题的变形 .事实上 ,由ａｂｃ =1,不妨设ａ =ｘｙ ,ｂ =ｙｚ ,ｃ=ｚｘ (ｘ ,ｙ ,ｚ∈Ｒ )代入 ( 1)式 ,得( ｘｙ - 1 ｚｙ) ( ｙｚ - 1 ｘｚ) ( ｚｘ - 1 ｙｘ)≤ 1 (ｘ ｚ - ｙ) (ｘ ｙ -ｚ) ( ｙ ｚ -ｘ)≤ｘｙｚ . ( 2 )( 2 )式是 1983年瑞士国际数学竞赛题之一 .关于它的证明较多 .其中最简单的莫过于如下证法 :由　ｘ2 ≥ｘ2 - ( ｙ -ｚ) 2=(ｘ ｙ -ｚ) (ｚ ｘ - ｙ) ,ｙ2 ≥ ( ｙ ｚ -ｘ) (…