RP-HPLC法检测发酵液中赤霉素GA4,GA7的含量

建立了反相高效液相色谱法(RP-HPLC)测定发酵液中赤霉素GA4,GA7的方法。探讨了流动相缓冲盐与甲醇的比例、缓冲盐pH、温度、流速等对两种赤霉素分离的影响,结果表明在Kromasil C18(250 mm×4.6 mm,5μm)色谱柱下,以V(甲醇):V(pH3.0,0.05 mol/L KH2PO4)=60:40为流动相,柱温35℃,流速1.0 mL/min,检测波长228nm,进样量20μL,分离度良好。GA4,GA7标准品质量浓度分别在0.1~8.0 mg/mL,0.1~3.0 mg/mL范围内线性关系良好,线性回归方程为Y4=1.58878+7.06978X4,Y7=0.48281+7.12931X7;GA4,GA7检出限分别为19.6,14.3μg/mL,平均加标回收率分别为98.8%,99.9%,相对标准偏差RSD分别为1.5%,0.34%。     

基于吸聚一体的低散射传输型透镜设计

通过传输型超表面透镜与电路模拟雷达波吸收器的集成设计,提出了一种兼具透射波前变换与带外雷达散射截面减缩特性的微波复合材料设计方法。透镜采用亚波长分布的周期性单元,由梯度相位补偿对透射波进行调节,进而获得平面波前与球面波前之间的互易变换。并且,使用透镜在波前变换频带以外低频端的反射特征,结合单个有耗层设计,构造了电路模拟吸波器。选用一副缝隙耦合馈电的微带贴片天线单元作为初级馈源天线,观察到复合材料的波前变换特性可在宽频带范围内产生主瓣增益增强效果。与透镜相比,电路模拟吸波器的引入使得复合材料针对TE与TM极化分别可在130.68%与155.11%的频率范围内获得雷达散射截面减缩效果。通过全波模拟和实验测量,验证了辐射增益增强与雷达散射截面减缩效果,表明了复合材料吸聚一体设计的有效性。     

Tolman length of simple droplet: Theoretical study and molecular dynamics simulation

In 1949, Tolman found the relation between the surface tension and Tolman length, which determines the dimensional effect of the surface tension. Tolman length is the difference between the equimolar surface and the surface of tension. In recent years, the magnitude, expression, and sign of the Tolman length remain an open question. An incompressible and homogeneous liquid droplet model is proposed and the approximate expression and sign for Tolman length are derived in this paper. We obtain the relation between Tolman length and the radius of the surface of tension(R_s) and found that they increase with the Rs decreasing. The Tolman length of plane surface tends to zero. Taking argon for example, molecular dynamics simulation is carried out by using the Lennard–Jones(LJ) potential between atoms at a temperature of 90 K. Five simulated systems are used, with numbers of argon atoms being 10140, 10935, 11760, 13500, and 15360, respectively. By methods of theoretical study and molecular dynamics simulation, we find that the calculated value of Tolman length is more than zero, and it decreases as the size is increased among the whole size range. The value of surface tension increases with the radius of the surface of tension increasing, which is consistent with Tolman’s theory. These conclusions are significant for studying the size dependence of the surface tension.     

56,54Fe(n, α)53,51Cr, 56,54Fe(n,p)56,54Mn反应截面计算及普适性模型参数优化研究

基于中子与Fe发生反应产生“氢泡”,及“氦泡”对新型核能利用系统壁材料的影响,开展了中子诱发56,54Fe(n, α)53,51Cr, 56,54Fe(n, p)56,54Mn反应截面计算研究工作。本工作根据现有的56,54Fe(n, α)53,51Cr, 56,54Fe(n, p)56,54Mn反应实验数据、评价数据,对TALYS程序调用的物理模型(包括能级密度、对修正、核温度、光学势参数等)进行参数调校,得到了一组普适性强的模型参数。基于调校的参数,本工作采用核反应程序TALYS理论计算56,54Fe(n, α)53,51Cr, 56,54Fe(n, p)56,54Mn反应的截面、能量微分截面以及双微分截面,全部数据都能与实验数据、评价数据符合较好,且适用于较宽的中子能量区间0~175 MeV。本工作提出了56,54Fe(n, α)53,51Cr, 56,54Fe(n, p)56,54Mn反应的普适性模型参数,促进了核反应理论的发展,为核数据的评价奠定了基础。     

G波段扩展互作用速调管的理论分析与设计

扩展互作用速调管是一种在毫米波、亚毫米波频段具有广泛应用前景的电真空器件.本文基于运动学理论、感应电流定理和电荷守恒定律,推导一间隙到五间隙谐振腔的电子负载电导和电子负载电纳的表达式,分析了谐振腔间隙宽度、间隙数和间隙周期等参数对电子注与微波之间能量交换的影响和谐振腔谐振频率的影响.根据理论分析结果,采用三维电磁仿真软件设计了一款工作于G波段的扩展互作用速调管,仿真结果显示,当电子注电压为24 kV、电流为0.15 A、输入功率为200 mW、轴向引导磁感应强度为0.8 T时,在中心频率217.94 GHz处,输出功率为225.5 W,电子效率为6.26%,增益为30.5 dB, 3 dB带宽约为470 MHz.     

基于两平行线及其线上三点的摄像机标定方法

在大视场交通监控摄像机的标定中,由于不便于放置大尺寸标定靶标,常采用交通标线构成的特定几何图形替代标定靶标,但许多交通场景仅有一组平行的车道分界交通标线,难以获得传统标定方法所需的标定约束条件。针对此类交通场景,选取两平行交通标线和其中一条线上的三点作为标定参考物,依靠其中一条线上三点在单幅图像中的像素坐标、三点间的两个距离值及平行线间距作为约束条件来完成摄像机的标定。建立了图像坐标系与世界坐标系之间新的换算关系,推导出了摄像机内外参数的求解公式,探讨了旋转角对测量误差的影响。实验结果表明,在约束条件不足的情况下能够获得较好的摄像机参数近似解,沿道路方向上的测距精度优于对比文献的结果,具有标定参考物选取容易、操作简便、几何约束条件少等优点,适用于交通监控系统中大视场摄像机的快速标定场合。     

Crystallization Process of Superlattice-Like Sb/SiO_2 Thin Films for Phase Change Memory Application

After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data retention ability(189°C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO_2(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO_2(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m·K).