Investigations of the dielectronic recombination of phosphorus-like tin at CSRm

The electron–ion recombination for phosphorus-like~(112) Sn~(35+)has been measured at the main cooler storage ring of the Heavy Ion Research Facility in Lanzhou, China, employing an electron–ion merged-beams technique. The absolute total recombination rate coefficients for electron–ion collision energies from 0 e V–14 e V are presented. Theoretical calculations of recombination rate coefficients were performed using the Flexible Atomic Code to compare with the experimental results. The contributions of dielectronic recombination and trielectronic recombination on the experimental rate coefficients have been identified with the help of the theoretical calculation. The present results show that the trielectronic recombination has a substantial contribution to the measured electron–ion recombination spectrum of~(112)Sn~(35+). Although a reasonable agreement is found between the experimental and theoretical results the precise calculation of the electron–ion recombination rate coefficients for M-shell ions is still challengeable for the current theory.     

重离子治癌装置4 MeV/u IH型漂移管直线注入器的动力学设计

基于KONUS束流动力学理论,完成了一台工作频率为162.5 MHz、占空比为1%的交叉指型漂移管直线注入器（IH-DTL）的动力学设计。该IH-DTL内置两套三组合四极透镜,共有41个加速单元,可为同步加速器提供流强400 eμA、能量4 MeV/u的C4+束流。在动力学设计过程中着重对每个加速间隙的同步能量偏差、注入相位和间隙电压等参数进行优化,使得该IH-DTL的横向归一化RMS接收度达到0.24 πmm·mrad,且横纵向归一化发射度增长小于10%,有利于提高同步环的注入效率。然后根据动力学设计的结构参数进行IH-DTL的高频仿真计算,将得到的三维电磁场分布导入PIC粒子跟踪程序中进行束流动力学模拟。动力学模拟结果显示,束流在IH-DTL出口的横向自然发射度小于13 πmm·mrad,达到了同步环的注入要求,而且在7%的垂直二极场分量下,束流中心的横向偏移在±0.5 mm以内,整体的束流传输效率高于99%。An interdigital H-mode drift tube linac (IH-DTL) with KONUS beam dynamic has been designed, which operation frequency was chosen 162.5 MHz. This IH-DTL consists of 41 accelerating cells and two quadrupole magnets triplets, can provide the C4+ with the current of 400 eμA and energy of 4 MeV/u for the synchrotron. In the beam dynamic design, the synchronous particle energy, inject RF phase and the acceleration voltage of each gap are optimized carefully to make the transverse normalized RMS acceptance of the IH-DTL to be 0.24 πmm·mrad and the beam emittance growth small than 10%. Then the RF structure was designed and the 3D electromagnetic field was imported into the PIC particle tracking code for the beam dynamic simulation. The transverse beam emittance at the exit of the IH-DTL is small than 13πmm·mrad which meets the injection requirement of the synchrotron. What is more, under the 7% vertical dipole fields component, the offset between the beam center and the drift tube's axis is ±0.5 mm at most. The transmission efficiency of the IH-DTL is higher than 99% for the whole beam in the acceptance.     

HIRFL-CSR commissioning in 2006 and 2007

HIRFL-CSR, a new heavy ion cooler-storage-ring system at IMP, had been in commissioning since the beginning of 2006. In the two years of 2006 and 2007 the CSR commissioning was finished, including the stripping injection (STI), electron-cooling with hollow electron beam, C-beam stacking with the combination of STI and e-cooling, the wide energy-range synchrotron ramping from 7 MeV/u to 1000 MeV/u by changing the RF harmonic-number at mid-energy, the multiple multi-turn injection (MMI), the beam accumulation with MMI and e-cooling for heavy-ion beams of Ar, Kr and Xe, the fast extraction from CSRm and single-turn injection to CSRe, beam stacking in CSRe and the RIBs mass-spectrometer test with the isochronous mode in CSRe by using the time-of-flight method.     

H2D+与固体的相互作用及H2D+的结构测量

报道了分子离子H₂D⁺与超薄固体膜相互作用的实验研究.阐述了H₂D⁺对天体物理等领域的重要性,简述了近几年针对H₂D⁺的研究,分析了在实验室条件下H₂D⁺的形成机理,给出了其与固体膜相互作用产生库仑爆炸的能谱.进行了辅助实验,使D₂⁺与相同固体膜发生作用,并利用这个结果和其他分析与处理方法,将H₂D⁺的D⁺能谱中D₂⁺计数部分做了去除.实验再次证实了分子离子与固体相互作用时尾流效应的存在,采用三体尾流效应对比的方法最终确定了H₂D⁺结构形状和键长.对H₂D⁺库仑爆炸后的较重离子尾流谱形状的反常现象做了讨论和分析.     

带电导体表面任一面元处的场强

有一带电导体,设其面元处电荷面密度为σ,则它所在处的场强为 E1= 而不是 .有的人在计算导体表面面元受力的问题时,把答案写 错误就出在将 中的E1误认为等于 了.为什么 所在处的场强为 呢?关键是在求场强时应该将 本身除去,而计算其它电荷在该面无处所产生的场强.见图,用E S表示带电面元△S所产生的场强.在它的附近,可将它视为无限大带电面,其场强垂直表面,大小为 .在导体外,极靠近导体表面附近,有E=E1 (n为导体表面法线方向的单位矢).由此即可得出 ,方向垂直导体表面向外.在导体内部,E1与E△S的合场强为零,由此亦可得出E1 方向与 相…     

重离子的束内散射

本文在Bjorken和Mtingwa束内散射理论的基础上进一步推导出了束内散射率的普遍表达式,并将该表达式应用于HIRFL—CSR的磁铁结构(lattice),计算并得到了束流横向发射度和纵向动量散度随时间变化的规律,结果表明,束内散射不会成为CSRlattice设计的障碍.     

多维系统的平均第一通过时间

本文通过累积方法,讨论了在O-U噪声驱动下的多维系统的平均第一通过时间(MFPT)问题;在小关联时间近似下,论证了MFPT方程的封闭性问题,并导出了近似的MFPT方程。应用到二维系统,得到MFPT的显式和一些有意义的结论。     

快速响应的超软X光探测器

核聚变等离子体的各种辐射,携有大量等离子体信息。探测这些辐射,是研究等离子体的重要课题之一。在激光等离子体研究中,驱动源的脉宽为毫微秒和亚毫微秒量级,要求探测的仪器时间响应极快速。为了得到激光等离子体电子温度、密度等信息,我们对等离子体辐射的X光连续谱进行了探测研究,并研制出多道X光连续谱仪。     

Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys

Time-resolved photoluminescence (PL) spectroscopy has be used to investigate indium-rich InGaN Mloys grown on sapphire substrates by metal organic chemical vapor deposition. Photoluminescence measurement indicates two dominant emission lines originating from phase-separated high- and low-indium-content regions. Temperature and excitation intensity dependence of the two main emission lines in these InGaN alloys have been measured.Temperature and energy dependence of PL decay lifetime show clearly different decay behaviour for the two main lines. Our results show that photo-excited carriers are deeply localized in the high indium regions while photo-excited carriers can be transferred within the low-indium-content regions as well as to high-content regions.     

隔声室的低频特性及实例验证

在分析隔板的低频隔声特性的基础上，本文通过两实例的分析比较，指出低频隔声遵从劲度定律，以及提高隔板劲度的有效方法.同时，还对影响隔声室低频隔声里的其它因素作了一些讨论.