裂纹问题的一致性高阶无网格法

一致性高阶无网格法能高效精确地求解连续体问题,尤其是能得到高精度的应力场。本文将该方法拓展到应力解析精度至关重要的裂纹问题（即非连续体问题）的数值分析。采用背景积分网格描述裂纹几何,基于无需增加节点额外自由度的虚拟节点法描述裂纹处位移场的间断,提出了虚拟节点的引入算法和断裂单元的数值积分方法。为进一步模拟裂纹扩展,采用相互作用积分方法计算应力强度因子,裂纹的扩展方向由最大周向应力准则确定。数值结果表明,本文发展方法能够精确地通过间断分片试验;相较于标准的高阶无网格法和低阶一致性无网格法,本文的一致性高阶无网格法显著改善了应力强度因子的计算精度,能够准确预测裂纹扩展路径。     

正负电子湮灭过程的核子激发态N*产生(英文)

目前,正负电子湮灭过程的核子激发态N*产生的实验数据主要来自于粲偶素能区。粲偶素衰变到核子激发态过程类似于其类时电磁形状因子测量过程,正反粲夸克短程湮灭提供了近乎于点源的胶子强子化过程。与γN,eN,πN反应互补,这一新的N*产生源具有同位旋和低自旋筛选的优势。综述了正负电子湮灭过程的核子激发态N*产生的实验情况和相关的唯象进展,同时讨论未来发展的一些新方向,如正负电子湮灭过程的核子激发态N*产物的一些新来源等。Up to now, the N* production from e+e- annihilations has been studied only around charmonium region. Charmonium decays to N*s are analogous to (time-like) EM form factors in that the charm quark annihilation provides a nearly pointlike (ggg) current. Complementary to other sources, such as πN, eN and γN reactions, this new source for N* spectroscopy has a few advantages, such as an isospin filter and a low spin filter. The experimental results on N* from e+e- annihilations and their phenomenological implications are reviewed. Possible new sources on N* production from e+e- annihilations are discussed.     

空间激光通信最新进展与发展趋势

空间激光通信凭借其带宽优势,成为未来高速空间通信不可或缺的有效手段,是近年来国际上的研究热点。本文详细介绍了美国、欧洲和日本在空间激光通信技术领域的最新研究进展和未来发展规划,总结了国内外空间激光通信演示计划的主要参数指标。通过对空间激光通信最新研究计划的分析,归纳出空间激光通信高速化、深空化、集成化、网络化、一体化5个发展趋势,以及需要突破的高阶调制、高灵敏度探测、多制式兼容、"一对多"通信等关键技术。为我国激光通信设备及相关研究提供借鉴和参考。     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

双层加筋板低频声的隔离与有源控制

为探讨加筋对双层结构低频隔声及有源控制的影响,分析了筋条数目及布放位置对双层加筋结构低频隔声性能、有源控制策略选取及有源隔声性能的影响。首先利用模态叠加与声-振耦合理论对双层加筋结构建模,然后采用数值算例对上述问题展开探讨。研究发现,筋条数目增多或筋条靠近基板的中间位置布放,将有利于双层加筋结构低频隔声性能的提高。对于有源控制措施,声控制策略与力控制策略相比,前者的控制效率较高且降噪效果较好。由于筋复杂的耦合影响,添加多条筋或筋条靠基板中间布置时有源控制效果减弱,需施加多个点源才能获得较好的降噪效果。      

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

掺杂元素离子半径对LiMxMn2-xO4(M=Li,Na,T1)电化学性能的影响

以尿素为络合剂,氢氧化锂、醋酸锰等为原料通过水热反应获得颗粒均匀的尖晶石LiMxMn2-xO4(M=Li,Na,T1)前驱物,然后将前驱物在600℃～700℃间煅烧4h后获得最终产物.实验主要考察了掺杂元素的离子半径和M-O键离解能对产物LiMxMn2-xO4充放电过程中稳定性的影响,以及煅烧温度对材料形貌与结构的影响.结果表明掺杂元素的离子半径与被取代元素的离子半径越接近则掺杂后的材料越稳定,而M-O键离解能的影响则很小.实验发现LiNa0.02 Mn1.98O4的综合性能最佳,该样品在室温0.2C倍率的首次放电容量可以达到107 mAh·g-1,且不可逆容量衰减小,电池循环20次后容量只衰减了约2.8％.     

NiS2的固态杂化微波合成研究

为了克服常规固相反应制备NiS2耗时耗能的缺陷,采用固态杂化微波加热技术,以Ni粉与S粉为起始原料成功合成了单相NiS2,将反应时间从数天缩短为30 min,基本确定了适宜的微波加热反应温度.采用X射线粉末衍射、扫描电子显微镜、X射线能谱、拉曼光谱对产物的结构、组份和形貌进行了表征.     

胍盐离子液体捕获CO2温室气体的机理

通过量子力学与分子动力学对胍盐离子液体的模拟表明,胍阳离子与氯负离子之间存在较强的相互作用,其相互作用能约为-109．216kcal／m01．从能量与几何分布可见,两种空间分布方式中最稳定构象为Middle作用模式．径向分布函数也验证了这一结论．C02含量的不断增加并没有对离子液体的结构产生影响,而是被离子液体的空腔捕获．