陕北鄂尔多斯盆地三叠系泥岩中粘土矿物在埋藏变质过程中的转化

本文在对粘土矿物X光定向片分析的基础上,利用电子显微镜(SEM,TEM)深入地研究了陕北鄂尔多斯盆地三叠系泥岩中粘土矿物在埋藏变质过程中的转化,在本区发现了镁铝蛇纹石、伊利石/绿泥石混层结构,及镁铝蛇纹石向绿泥石转化结构。并据伊利石-石英平衡矿物对氧同位素测温计算,这一转化过程的温度大致为160—220℃,伊利石、绿泥石结晶度及多型的研究表明,随埋深的增加它们都出现规律性变化,并且各种指数间具有一定的相关性。     

镜面起伏对1.55μm Si基MEMS光滤波器的影响

用传输矩阵方法,在简化的光学模型基础上,分别讨论了分布式Bragg反射镜DBR(Distributed Bragg Reflector)的生长精度及镜面起伏对1.55 μm Si基MEMS(Micro-Electro-Mechanical-System)可调谐光滤波器透射谱的影响.计算表明:DBR生长误差仅使主透射峰位置发生变化,而镜面起伏是导致主透射峰性能劣化的主要原因,它使得FWHM增大,透射峰强度下降.理论计算结果能较好地解释实验现像.在此基础上,进一步讨论了引起镜面起伏的多种原因,并提出了可能的解决方法.     

自对偶黎曼流形

<正> 设M是四维黎曼流形,W是其Weyl共形曲率张量,如果W_(ijkl)=1/2ε_(klpq)W_(ijpq),则M叫半平坦空间或自对偶流形.I.M.Singer与杨振宁指出CP~2是半平坦Einstein空间,     

重掺B对应变SiGe材料能带结构的影响

硅锗异质结双极晶体管(SiGe HBT)一般以重掺硼(B)的应变SiGe层作为基区.精确表征SiGe材料能带结构对SiGe HBT的设计具有重要的意义.在应变SiGe材料中，B的重掺杂一方面会因为重掺杂效应使带隙收缩，另一方面，B的引入还会部分补偿Ge引起的应变，从而改变应变引起的带隙变化.在重掺B的应变SiGe能带结构研究中，采用半经验方法，考虑了B的应变补偿作用对能带的影响，对Jain-Roulston模型进行修正，并分析了重掺杂引起的带隙收缩在导带和价带的分布.     

RADIATION OF DRESSED EXCITONS IN THE SEMICONDUCTOR MICROCAVITY

In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multi-particle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.     

单行载流子光电探测器中空间电荷屏蔽效应理论分析和实验研究

本文优化设计和外延生长了一种单行载流子(UTC)光电探测器有源区结构,并且采用微电子工艺制备了台面尺寸为30μm的UTC光电探测器.同时,采用了漂移-扩散模型对该有源区结构进行了理论模拟,从载流子浓度和空间电场角度重点分析研究了空间电荷屏蔽效应对UTC光电探测器直流饱和特性影响的物理机理.UTC光电探测器理论模拟结果与实测数据基本相符.     

High-speed 2×2 silicon-based electro-optic switch with nanosecond switch time

A 2× 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach--Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1~mm in length and cross-section of 400~nm× 340~nm. The measurement results show that the switch has a V_πL_π figure of merit of 0.145~V\cdot cm and the extinction ratios of two output ports and cross talk are 40~dB, 28~dB and -28~dB, respectively. A 3~dB modulation bandwidth of 90~MHz and a switch time of 6.8~ns for the rise edge and 2.7~ns for the fall edge are also demonstrated.     

Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature

Well-aligned and closely-packed silicon nanopillar (SNP) arrays are fabricated by using a simple method with magnetron sputtering of Si on a porous anodic alumina (PAA) template at room temperature. The SNPs are formed by selective growth on the top of the PAA pore walls. The growth mechanism analysis indicates that the structure of the SNPs can be modulated by the pore spacing of the PAA and the sputtering process and is independent of the wall width of the PAA. Moreover, nanocrystals are identified by using transmission electron microscopy in the as-deposited SNP samples, which are related to the heat isolation structure of the SNPs. The Raman focus depth profile reveals a high crystallization ratio on the surface.     

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity (> 1 A/W), high saturation power (> 45 mA) in the static state and extremely low dark current density (0.04 pA/μm²) with 3 dB bandwidth at 13.4 GHz have been achieved.     

多模干涉马赫曾德尔光开关模型

根据N×N多模干涉耦合器的基本原理 ,确定了多模干涉耦合器的结构参数。通过分析多模干涉耦合器的输入光场与其映像间的相位关系 ,提出了模传输矩阵的分析方法 ,并用此方法分析了N×N普通干涉多模干涉耦合器、N×N相移器以及N×N普通干涉多模干涉马赫 曾德尔光开关 ,得到了它们的模场传输方程 ,分析了光开关在光场从任一输入端输入 ,从任一输出端输出时开关的驱动条件。用上面的方法分析了 4× 4光开关的结构及驱动条件