基于耦合介质纳米线的深亚波长局域波导

提出了一种基于耦合介质纳米线的深亚波长局域波导,通过两根紧邻的高折射率介质纳米线的耦合,该波导可以将光场有效束缚在纳米线之间的低折射率纳米缝隙中. 计算模拟的结果表明,该波导的有效模场面积达到Λ²₀/200,比单根纳米线波导小一个数量级,这种深亚波长的模场束缚能力可以与表面等离激元混合波导相比拟. 计算模拟的结果还表明,纳米线可能带有的低折射率氧化膜、低折射率衬底的存在、以及纳米线间尺寸存在的一定差异对于该波导结构的实际应用都不会产生很大 关键词： 介质波导 亚波长局域 表面等离激元波导 纳米线     

Attenuation Characteristics of Corrugated Circular Groove Waveguide

When neglecting space harmonics and higher-order slot modes, the attenuation characteristic of corrugated circular groove waveguide has been investigated. It is shown that under certain conditions, the attenuation coefficient of HE ₁₁ mode will be lower than that of dominant TE ⁽¹⁾ ₁₁ mode of circular groove waveguide with same radius.     

Ring Light Beam Deflector: Theory

The arrayed-waveguide deflector for 3-D light beam steering is described. The proposed structure with a 2-D waveguide is suitable for using the electrooptic effect. The device can also generate a light beam with phase singularity. Its usage is expected to find many applications including measurement and information processing. When the device is used to implement an N channel large-scale optical switch, only a 3N^1/2 waveguide array is required for a phaser. Fast beam steering will lead to new field of applications impossible with conventional devices.     

A numerical analysis of gain characteristics of Er-doped Al2O3 waveguide amplifiers

The gain characteristics of erbium-doped Al₂O₃ waveguide amplifiers are investigated by solving numerically rate equations with upconversion effects and propagation equations. We obtained the dependence of gain of erbium-doped Al₂O₃ waveguide amplifiers on the waveguide length, erbium concentration and pump power at different pumping wavelengths (980 and 1480 nm). The performance of amplifiers pumping at 1480 and 980 nm are compared. It is shown that 980 nm pumping has higher gain and higher pumping efficiency. The parameters of waveguide amplifiers have been optimized. A optical gain of 43 dB can be achieved for a optimum waveguide length of 8.25 cm and 5.8 × 10²⁰ cm^–3 Er concentration pumped with 100 mW at 980 nm, that is a gain of 5.2 dB/cm.     

The study of damage and optical properties in LiNbO3 implanted by MeV Er and He ions

Abstract

Two LiNbO₃ (X and Y cut) crystals from different companies were implanted by 3.0 MeV Er ions to a dose of 7.5 × 10¹⁴ ions/cm² and 3.5 × 10¹⁴ ions/cm² with different beam current densities, respectively. After annealing at 1060°C in air for 2 hours, one LiNbO₃ sample was implanted by 1.5 MeV He ions to a dose of 1.5 × 10¹⁶ ions/cm². The Rutherford backscattering/channeling and prism coupling method have been used to study the damage and optical properties in implanted LiNbO₃. The results show: (1) the damage in LiNbO₃ created by 3.0 MeV Er ions depends strongly on the beam current density; (2) after annealing at 1060°C in air for 2 hours, a good Er doped LiNbO₃ crystal was obtained; (3) there is waveguide formation possible in this Er-doped annealed LiNbO₃ after 1.5 MeV He ion implantation. It is suggested that annealing is needed to remove the damage created by MeV Er ions before the MeV He ion implantation takes place, to realize the waveguide laser for Er doped LiNbO₃.     

Suppression of Polarization Dependence in the Design of a 11×11 Polymer/Si Arrayed Waveguide Grating

In this paper we report an effective work of polarization independence in the design of a 11×,11 polymer arrayed waveguide grating (AWG) multiplexer. Theoretical analysis of the polarization properties is given by using Marcatili method. Numerical simulations are performed for independent polarization and single-mode propagation of a rectangular waveguide and bent waveguide with various geometries. The polarization dependence of the AWG device is successfully suppressed by controlling the relative index difference (Δn) between the core and the cladding, ratio between the core width and thickness (a/b), and bent radius of arrayed waveguides, considering practical technical error. The transmission characteristics of two AWGs for two parameter groups of Δn = 1%,a/b = 2 and Δn = 0.8%, a/b = 1.5, show the wavelength shift of 3.5 and 0.02 nm, respectively. The later group of data, which is used in our work, strongly supports the optimum design that we have identified for the birefringence suppression.     

Gain evaluation of compact designing on Er/Yb codoped germanate glass channel waveguide

Bent waveguide structures (U- and F-bend) based on UV-sensitive Er³⁺/Yb³⁺ codoped germanate glass substrates have been designed to achieve high-gain C-band amplification. Using simulated-bend method, the optimal radius for curved structure is offered to be 1.90 cm with loss coefficient of 0.0015 dB/cm, as the substrate size is minimally schemed. In the wavelength range of 1528–1559 nm, obvious gain enhancement for the bent structure waveguides is anticipated, while, for the F-bend waveguide, the internal gain at 1533.8 nm wavelength is derived to be 22.55 dB, which is much higher than the value of 14.06 dB in the U-bend waveguide, and over three times higher than that of the straight one, after compensating both the bend loss and the transition loss. The simulation results indicate that the bent structure designing is beneficial in attaining high optical gain in Er³⁺/Yb³⁺ codoped germanate glass substrates, which assures that long-period grating can be applied to implement practical C-band gain-flattened amplification.     

Optical path design and evaluation in Tm doped glass channel waveguide for S-band amplification

To achieve high-gain S-band waveguide amplifiers and promote the practicality of integrated signal amplification devices, bent waveguide structures based on Tm³⁺ doped germanate glass substrate have been designed. Using simulated-bend method, the optimal radius for the curved structure is offered to be 1.90 cm with a loss coefficient of 0.04 dB/cm, as the substrate size is minimally schemed. For the folded-spiral waveguide, the internal gain at 1482 nm is derived to be 13.01 dB, which is higher than the values of 8.21 and 4.22 dB in the U- and S-bend waveguides, respectively, and nearly three times higher than that of the straight one. Simulation results indicate that the optical path design is attractive in realizing the high gain of Tm³⁺ doped germanate glass channel waveguides for practical S-band amplification.     

Electron Conductance and Lifetimes in a Ballistic Electron Waveguide

Ballistic electron waveguides are open quantum systems that can be formed at very low temperatures at a GaAs/AlGaAs interface. Dissipation due to electron–phonon and electron–electron interactions in these systems is negligible. Although the electrons only interact with the walls of the waveguide, they can have a complicated spectrum including both positive energy bound states and quasibound states which appear as complex energy poles of the scattering S-matrix or energy Green's function. The quasibound states can give rise to zeros in the waveguide conductance as the energy of the electrons is varied. The width of the conduction zeros is determined by the lifetimes of the quasibound states. The complex energy spectrum associated with the quasibound states also governs the survival probability of electrons placed in the waveguide cavities.     

Nanoscale C‐Rich SixC1−x Bus/Ring Waveguide Based Cross‐Wavelength Data Converter

The carbon‐rich silicon carbide (C‐rich Si_xC_1?x) micro‐ring channel waveguide with asymmetric core aspect is demonstrated for all‐optical cross‐wavelength pulsed return‐to‐zero on‐off keying (PRZ‐OOK) data conversion. Enhanced nonlinear optical Kerr switching enables 12‐Gbit per second data processing with optimized modulation depth. The inverse tapered waveguide at end‐face further enlarges the edge‐coupling efficiency, and the asymmetric channel waveguide distinguishes the polarization modes. To prevent data shape distortion, the bus/ring gap spacing is adjusted to control the quality factor (Q‐factor) of the micro‐ring. Designing the waveguide cross section at 500 × 350 nm² provides the C‐rich Si_xC_1?x channel waveguide to induce strong transverse electric mode (TE‐mode) confinement with a large Kerr nonlinearity of 2.44 × 10^?12 cm² W^?1. Owing to the trade‐off between the Q‐factor and the on/off extinction ratio, the optimized bus/ring gap spacing of 1400 nm is selected to provide a coupling ratio at 5–6% for compromising the modulation depth and the switching throughput. Such a C‐rich Si_xC_1?x micro‐ring with asymmetric channel waveguide greatly enhances the cross‐wavelength data conversion efficiency to favor its on‐chip all‐optical data processing applications for future optoelectronic interconnect circuits.     

Guiding light through optical bound states in the continuum for ultrahigh‐Q microresonators

Light is usually confined in photonic structures with a band gap or relatively high refractive index for broad scientific and technical applications. Here, a light confinement mechanism is proposed based on the photonic bound state in the continuum (BIC). In a low‐refractive‐index waveguide on a high‐refractive‐index thin membrane, optical dissipation is forbidden because of the destructive interference of various leakage channels. The BIC‐based low‐mode‐area waveguide and high‐Q microresonator can be used to enhance light–matter interaction for laser, nonlinear optical and quantum optical applications. For example, a polymer structure on a diamond membrane shows excellent optical performance that can be achieved with large fabrication tolerance. It can induce strong coupling between photons and the nitrogen–vacancy center in diamond for scalable quantum information processors and networks.

     

Numerical analysis of amplification characteristic of erbium-doped waveguide amplifiers by FD-BPM

An efficient analysis method for erbium-doped optical waveguide amplifiers (EDWA) is presented. By solving the rate equation, the propagation in EDWA is stimulated using the finite difference beam propagation method (FD-BPM). The dependence of the gain of EDWA is investigated on the waveguide length, erbium concentration, and signal and pump power. The analysis shows that considerable gain levels, 3.35 dB/cm can be achieved in 10 cm-long EDWA with an erbium concentration of 2.0 × 10²⁶ ions/m³, signal power 1 W and pump power 100 mW at 980 nm.     

线性剖面克尔材料分层板波导中光波的传播

对三层板波导中光波传播问题进行了讨论.芯材料是克尔型介质,其折射率平方(n²)剖面分布随x作线性变化.此时芯区的亥姆霍兹方程约化为Painleve方程,利用Laurant级数可得到其近似解.     

A TiO2 Film/K+ Ion-Exchanged Glass Composite Optical Waveguide and Its Application to a Refractive Index Sensor

A composite optical waveguide for biological and chemical sensors was successfully developed by sputtering a thin TiO₂ film onto the surface of a low loss potassium ion-exchanged optical waveguide. The electric field of the evanescent wave at the film surface was made strong through adiabatic transition of the guided light. The attenuation of the guided light was sufficiently small in the air, and the guided light intensity was changed sensitively with the refractive index of the cladding layer (n_c). Thus, n_c can be sensitively monitored with a detecting sensitivity of about 10^-4.     

斜接弯波导模式转换器

经理论分析得出,一段小曲率半径弯曲圆波导的传输特性和一段与其弯角相同、轴线长度相等的斜接弯波导的传输特性一致,从而提出了一种由多节直圆波导依次倾斜连接构成的TM01-TE11斜接弯波导模式转换器,并介绍了该模式转换器的设计方法,给出了设计实例。优化结果表明,所设计的模式转换器在中心频率上均具有99%以上的转换效率。     

Lasing of Nd3+ in sapphire

We present a rare‐earth‐doped sapphire laser. Single‐crystalline α‐Al₂O₃ films doped with trivalent neodymium have been grown by pulsed laser deposition on undoped sapphire substrates. The Nd³⁺ doping concentrations of the films have been varied between 0.3 at.% and 2 at.%. Epitaxial growth was proven by structural and optical characterization of the films. The samples exhibit strongly polarization dependent emission transitions from the ⁴F_3/2 manifold with a fluorescence lifetime of 108 μs and peak emission cross sections of 1.1 × 10⁻¹⁸ cm² around 1100 nm. Lasing at 1096.5 nm was achieved under Ti:sapphire‐pumping in a planar waveguide configuration with a maximum cw output power of 137 mW and a slope efficiency of 7.5% with respect to the incident pump power.

     

非截面二维光子晶体排列矩形波导的全模式分析

在对周期性结构进行谐波分析的基础上，导出了非截面二维光子晶体排列矩形波导的本征值方程. 基于此方程，可以对该类光子晶体波导的所有可能模式进行分析. 分析认为，非截面二维光子晶体排列矩形波导内能存在的模式包括E_(y)，TE_y，H_(y)和TM_y模式；改变波导高度，可以实现E_(y)模式和H_(y)模式与其他模式通带的完全分离. 然而改变任一结构参数，都不能使E_(y)和H_(y)的各个模式通带，以及E_(y)1模式和H_(y)1模式的通带完全隔离. 波导单模工作的带宽由E_(y)1和E_(y)2模式的低端截止频率决定. 关键词： 波导 光子晶体 本征值方程 模式     

光子晶体波导中的孤子传输及其延迟特性研究

研究了正方晶格和三角晶格空气背景硅介质柱光子晶体线缺陷波导导模左带隙边缘处的亮孤子脉冲传播特性及其慢光延迟特性. 采用平面波展开法仿真分析了波导相邻两行介质柱大小r₁和r₂以及波导宽度D对孤子脉冲传输所需峰值功率P₀和延迟时间T_s的影响,总结了其变化规律. 通过调整波导结构得到了正方晶格和三角晶格优化波导结构,优化后,正方晶格结构波导P₀减小了81.17%,T_s增加了66.32%;三角晶格结构波导P₀减小了73.7%,T_s增加了67.63%,实现了孤子传输性能的大幅度优化. 关键词： 光子晶体波导 光孤子 峰值功率 延迟时间     

高功率微波在等离子体填充波导中的谐波产生

采用等离子体流体理论，研究了高功率微波在等离子体填充波导中的谐波产生，导出了非线性波动方程. 对二次谐波产生进行了数值计算与分析. 理论分析和数值计算表明，高功率微波将在等离子体填充波导中激发起谐波，TE_0n模式与TM_0n模式的基波都将激发起TM类型的谐波. 关键词： 高功率微波 谐波产生 等离子体填充波导     

A Broad-Band Low-Noise Schottky Diode Full-Height Waveguide Mixer from 80 to 115 GHz

The RF matching problem in the input circuit of the mm-wavelength whisker contacted Schottky diode mixer is studied. The experimental results, obtained on the 3mm wavelength mixer mounts in the broad band of frequencies from 80 to 115 GHz are presented. It is shown that advantage in the receiver noise temperature may be realized by the use of a full-height instead of 1/4-reduced-height waveguide because of reduction loss in the mixer input circuit even beginning from the 3mm-wavelength. With a full-height waveguide mixer the double sideband (DSB) receiver noise temperature is 300 divided by 350K over the 85 to 110 GHz band. Input bandwidth of the fullheight waveguide mixer (cap delta f _S/f _SO greater than 30%) is equal to 1/2-and close to 1/4-reduced-height waveguide mixers.