HKC细胞损伤对草酸钙晶体成核和聚集的促进作用

采用H2O2对人肾小管上皮细胞(HKC)进行损伤. HKC损伤后,其活力降低,并表达骨桥蛋白(OPN). 损伤细胞促进草酸钙晶体的成核、聚集,并促进一水草酸钙(COM)晶体的形成,但对晶体生长的促进作用不明显. 本文结果提示,HKC细胞损伤后增加了肾结石形成的危险性.     

孔径可调的介孔SiO2自支持薄膜的溶剂挥发诱导自组装合成与表征

以十六烷基三甲基溴化铵(CTAB)为模板剂, 正硅酸乙酯为硅源, 在弱酸性条件下利用溶剂挥发诱导自组装(EISA)合成出具有介孔结构的二氧化硅薄膜. 通过控制EISA过程中溶剂挥发的环境, 可在1.4~3.1 nm的范围内调节介孔结构的孔径. 实验表明, 较快的溶剂挥发速率有助于较大孔径的介孔结构生成. 用该方法合成的介孔薄膜具有蠕虫状孔道结构和良好的孔径均一性. 在外观上, 该薄膜具有均匀、透明和无缺陷等特点, 可以自支撑, 并且具有一定的韧性.     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

Tunable wavelength filters using polymer long-period waveguide gratings based on metal-cladding directly defined technique

In this work, long-period waveguide grating-based tunable wavelength filters using organic–inorganic grafting poly(methyl methacrylate)(PMMA) materials are designed and fabricated by metal-cladding directly defined technique.The thermal stabilities and optical properties of the organic–inorganic grafting PMMA core materials are analyzed. Structures and performance parameters of the waveguide gratings and self-electrode heaters are designed and simulated. The contrast of the filter is about 15 d B and the resonant wavelength can be tuned by different electric powers applied to the metal-cladding self-electrode heaters. The temperature sensitivity is 3.5 nm/℃ and the switching time is about 1 ms. The technique is very suitable for realizing the optoelectronic integrated wavelength-division-multiplexing systems.     

All polymer asymmetric Mach-Zehnder interferometer waveguide sensor by imprinting bonding and laser polishing

We present an all polymer asymmetric Mach–Zehnder interferometer(AMZI) waveguide sensor based on imprinting bonding and laser polishing method. The fabrication methods are compatible with high accuracy waveguide sensing structure. The rectangle waveguide structure of this sensor has three sensing surfaces contacting the test media, and its sensing accuracy can be increased 5 times compared with that of one surface sensing structure. An AMZI device structure is designed. The single mode condition, the length of the sensing arm, and the length deviation between the sensing arm and the reference arm are optimized. The length deviation is optimized to be 19.8 μm in a refractive index range between1.470 and 1.545. We fabricate the AMZI waveguide by lithography and wet etching method. The imprinting bonding and laser polishing method is proposed and investigated. The insertion loss is between-80.36 dB and-10.63 dB. The average and linear sensitivity are 768.1 d B/RIU and 548.95 dB/RIU, respectively. And the average and linear detection resolution of the sensor are 1.30×10~(-6) RIU(RIU: refractive index unit) and 1.82×10~(-5) RIU, respectively. This sensor has a fast and cost-effective fabrication process which can be used in the cases of requiring portability and disposability.     

铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射

利用飞秒激光脉冲在生长于二氧化硅衬底上的W/CoFeB/Pt和Ta/CoFeB/Pt两类铁磁/非磁性金属异质结构中实现高效、宽带的相干THz脉冲辐射.实验中, THz脉冲的相位随外加磁场的反转而反转,表明THz辐射与样品的磁有序密切相关.为了考察三层膜结构THz辐射的物理机制,分别研究了构成三层膜结构的双层异质结构(包括CoFeB/W, CoFeB/Pt和CoFeB/Ta)的THz辐射.实验结果都与逆自旋霍尔效应相符合, W/CoFeB/Pt和Ta/CoFeB/Pt三层膜结构所辐射的THz强度优于同等激发功率下的ZnTe (厚度0.5 mm)晶体.此外,还研究了两款异质结构和ZnTe的THz辐射强度与激发光脉冲能量密度的关系,发现Ta/CoFeB/Pt的饱和能量密度略大于W/CoFeB/Pt的饱和能量密度,表明自旋电子在Ta/CoFeB/Pt中的界面积累效应相对较小.     

常见野生蘑菇的红外光谱及其二维相关红外光谱的鉴别

采用傅里叶变换红外光谱结合相关性分析、二阶导数谱和二维相关谱对13种常见野生蘑菇进行鉴别研究。结果显示13种野生蘑菇的红外光谱光谱特征相似,主要由蛋白质、多糖的吸收组成,13种样品的相关系数最小为0.779,最大值为0.960。在1 700~1 400和1 400~800 cm-1范围的二阶导数光谱中,各样品吸收峰的强度、位置和形状均有明显差异。二维相关红外光谱在1 380~1 680 cm-1范围的强自动峰整体相近,但自动峰和交叉峰位置、形状存在差异;在920~1 230 cm-1的范围,各样品的自动峰和交叉峰的数量、强度和位置差异明显。结果表明傅里叶变换红外光谱结合相关性分析、二阶导数谱和二维相关谱有望发展为区分不同种类蘑菇的快速方法。     

冬虫夏草中甘露醇和虫草素的TOF-SIMS分析

用飞行时间二次离子质谱(TOF-SIMS)分析研究了冬虫夏草中两个最重要的药效活性物质,甘露醇和虫草素,重点研究对应质量数251 amu的质谱峰含有的化学信息。利用TOF-SIMS高质量分辨率的优势, 检测并识别251和252 amu质谱峰的信号有可能不是保健药理活性物质虫草素C₁₀H₁₃N₅O₃(251 amu)产生的分子离子峰M+,[M+H]+,这或许就是文献中有关研究虫草素存在争论的原因。TOF-SIMS分析结果为进一步解读251 amu质谱峰的化学内含、深入研究冬虫夏草中虫草素提供了依据;同时就甘露醇对应的(181 amu附近)TOF-SIMS负离子质谱峰做了细致的解读, 确认181 amu质谱峰是识别冬虫夏草中甘露醇的可靠依据。本研究证明, TOF-SIMS是分析、研究、鉴别冬虫夏草的有效手段。     

The 650-nm variable optical attenuator based on polymer/silica hybrid waveguide

Visible light variable optical attenuators(VOA) are essential devices in the application of channel power regulation and equalization in wavelength-division multiplexing cross-connect nodes in plastic optical fiber(POF) transmission systems.In this paper, a polymer/silica hybrid waveguide thermo–optic attenuator based on multimode interference(MMI) coupler is designed and fabricated to operate at 650 nm. The single-mode transmission condition, MMI coupler, and transition taper dimensions are optimized through the beam propagation method. Thermal analysis based on material properties provides the optimized heater placement angle. The fabricated VOA presents an attenuation of 26.5 dB with a 21-mW electrical input power at 650 nm. The rise time and fall time are 51.99 and 192 μs, respectively. The time–stability measurement results prove its working reliability.