铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射

利用飞秒激光脉冲在生长于二氧化硅衬底上的W/CoFeB/Pt和Ta/CoFeB/Pt两类铁磁/非磁性金属异质结构中实现高效、宽带的相干THz脉冲辐射.实验中, THz脉冲的相位随外加磁场的反转而反转,表明THz辐射与样品的磁有序密切相关.为了考察三层膜结构THz辐射的物理机制,分别研究了构成三层膜结构的双层异质结构(包括CoFeB/W, CoFeB/Pt和CoFeB/Ta)的THz辐射.实验结果都与逆自旋霍尔效应相符合, W/CoFeB/Pt和Ta/CoFeB/Pt三层膜结构所辐射的THz强度优于同等激发功率下的ZnTe (厚度0.5 mm)晶体.此外,还研究了两款异质结构和ZnTe的THz辐射强度与激发光脉冲能量密度的关系,发现Ta/CoFeB/Pt的饱和能量密度略大于W/CoFeB/Pt的饱和能量密度,表明自旋电子在Ta/CoFeB/Pt中的界面积累效应相对较小.     

Magnetic anisotropy manipulation and interfacial coupling in Sm3Fe5O12 films and CoFe/Sm3Fe5O12 heterostructures

The magnetic anisotropy manipulation in the Sm₃Fe₅O₁₂ (SmIG) films and its effect on the interfacial spin coupling in the CoFe/SmIG heterostructures were studied carefully. By switching the orientation of the Gd₃Ga₅O₁₂ substrates from (111) to (001), the magnetic anisotropy of obtained SmIG films shifts from in-plane to out-of-plane. Similar results can also be obtained in the films on Gd₃Sc₂Ga₃O₁₂ substrates, which identifies the universality of such orientation-induced magnetic anisotropy switching. Additionally, the interfacial spin coupling and magnetic anisotropy switching effect on the spin wave in CoFe/SmIG magnetic heterojunctions have also been explored by utilizing the time-resolved magneto-optical Kerr effect technique. It is intriguing to find that both the frequency and effective damping factor of spin precession in CoFe/SmIG heterojunctions can be manipulated by the magnetic anisotropy switching of SmIG films. These findings not only provide a route for the perpendicular magnetic anisotropy acquisition but also give a further path for spin manipulation in magnetic films and heterojunctions.     

Effect of Anti-Diffusion Oxide Layer on Enhanced Thermal Stability of Magnetic Tunnel Junctions

Magnetic tunnel junctions （MTJs） with one proper oxidized FeOx layer placed between the Al oxide barrier and the top CoFe pinned layer show large tunnelling-magnetoresistance （TMR） signals as high as 39% after anneal at 380℃. The increased TMR signal may originate from the as-deposited Fe/FeOx （non-magnetic） layers changing to Fe＋magnetic FeOy layer （some Fe3O4 and mostly other kind of magnetic Fe oxide） after high temperature anneal. The maximum TMR value （TMR ） and the corresponding temperature Ts where the TMRmax occurs upon annealing are closely associated with the oxidation time of the AlOx and FeOx layers, too long oxidation for the Fe layers is detrimental for the TMR value. In addition to the enhanced AlOx barrier quality upon anneal, the improved thermal stability is also attributed to the Mn diffusion retardation by the presence of the FeOx layer which acts as an antidiffusion layer. For MTJs without the interposed FeOx layer, the TMR signal reduction at 300℃ originates from the Mnlr/CoFe partially decoupling and CoFe/AlOx interface polarization loss due to the significant Mn diffusion.     

c轴垂直取向FePt薄膜的磁和磁光性能研究

采用直流磁控溅射的方法在氧化镁(100)单晶基板上生长了一系列c轴垂直取向的FePt薄膜，通过改变沉积时的基板温度，薄膜从Fe，Pt原子无序排列的面心立方结构逐渐变化到有序排列的L1₀相面心四方结构.在此基础上，系统研究了FePt薄膜的化学有序度对磁和磁光性能的影响.随着有序度的增加，FePt薄膜的磁晶各向异性能，以及沿垂直方向的矫顽力、剩磁比均增加，在基板温度高于530 ℃时制备的薄膜中的磁晶各向异性能超过1 J/cm³.同时，还观察到有序FePt合金薄膜的磁光克尔光谱(克尔转角的大小和极值所对应的跃迁光子能量)随化学有序度的显著变化. 关键词： FePt薄膜 化学有序度参数 磁光克尔光谱     

c轴垂直取向FePt薄膜的磁和磁光性能研究

采用直流磁控溅射的方法在氧化镁(100)单晶基板上生长了一系列c轴垂直取向的FePt薄膜,通过改变沉积时的基板温度,薄膜从Fe,Pt原子无序排列的面心立方结构逐渐变化到有序排列的L10相面心四方结构.在此基础上,系统研究了FePt薄膜的化学有序度对磁和磁光性能的影响.随着有序度的增加,FePt薄膜的磁晶各向异性能,以及沿垂直方向的矫顽力、剩磁比均增加,在基板温度高于530℃时制备的薄膜中的磁晶各向异性能超过1J/cm3.同时,还观察到有序FePt合金薄膜的磁光克尔光谱(克尔转角的大小和极值所对应的跃迁光子能量)随化学有序度的显著变化.     

Structural and Magnetic Properties of [Fe/Ni]N Multilayers

[Fe/Ni]N multilayered structure grows epitaxially on the single crystalline MgO substrate. Due to the different directions of magnetic easy axes of Fe and Ni and the strong strain, large anisotropy dispersion is assumed. According to the layer model, the magnetization of Fe and Ni layers cannot follow each easy axis because of exchange coupling, and then the anisotropies are averaged out. The reduction of the effective anisotropy enhances with the decrease of periodic thickness. Thus, the coercivity of [Fe/Ni]N multilayers reduces with decreasing periodic thickness.     

Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of non-ferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.     

Influence of Fe cap layer on the structural and magnetic properties of Fe49Pt51/Fe bi-layers

The influences of an Fe cap layer on the structural and magnetic properties of FePt/Fe bi-layers are investigated. Compared with single FePt alloy films, a thin Fe layer can affect the crystalline orientation and improve the chemical ordering of L10 FePt films. Moreover, the coercivity increases when a thin Fe layer covers the FePt layer.Beyond a critical thickness, however, the Fe cover layer quickens the magnetization reversal of Fe49Pt51/Fe bi-layers by their exchange coupling.