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报道了SiCl4/H2等离子体化学气相沉积方法制备的未掺杂微晶硅薄 膜,在短时间光照或加上直流偏压后其室温暗电导随时间缓慢变化的行为. Raman散射谱结 果表明,薄膜的晶态体积比大于70%. 暗电阻的实验结果显示: 材料具有弱的持久光电导效 应;薄膜的暗电导在外加直流电场的作用下缓慢上升,电场反向后出现暗电导的恢复过程, 而且暗电导变化速度与偏压大小和温度有关. 根据异质结势垒模型,指出外加条件下载流子 的空间分离和重新分布以及材料非均匀性造成的势垒是引起电导
关键词:
微晶硅
电导率
薄膜 相似文献
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用拉曼散射谱研究以SiCl4 H2 为气源 ,用射频辉光放电等离子体增强化学气相沉积技术 ,在 2 0 0℃低温下沉积多晶硅薄膜的微结构特征 .结果表明 ,薄膜表层包含有大量微晶相的纳米硅晶粒和非晶相的硅聚合物 ,随射频功率增加 ,晶相结构的成分增大 .另一方面 ,深度拉曼谱分布的研究也显示薄膜的晶化度和晶粒尺度随纵向深度的增加逐渐增大 .因此可以认为 ,在多晶硅薄膜生长的最初阶段 ,空间反应过程对低温晶化起重要作用 . 相似文献
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The spatial distributions of the electron density and the mean electron
energy of argon radio frequency (rf) glow discharge plasma in a
plasma-enhanced chemical vapour deposition (PECVD) system have been
investigated using an established movable Langmuir probe. The results
indicate that in the axial direction the electron density tends to peak at
midway between the two electrodes while the axial variation trend of
mean electron energy is different from that of the electron density, the
mean electron energy is high near the electrodes. And the mean electron
energy near the cathode is much higher than that near the anode. This
article focuses on the radial distribution of electron density and mean
electron energy. A proposed theoretical model distribution agrees well with
the experimental one: the electron density and the mean electron energy both
increase from the centre of the glow to the edge of electrodes. This is
useful for better understanding the discharge mechanism and searching for a
better deposition condition to improve thin film quality. 相似文献