Stimulated Brillouin scattering-induced phase noise in an interferometric fiber sensing system

Stimulated Brillouin scattering-induced phase noise is harmful to interferometric fiber sensing systems.The localized fluctuating model is used to study the intensity noise caused by the stimulated Brillouin scattering in a single-mode fiber.The phase noise structure is analyzed for an interferometric fiber sensing system,and an unbalanced Michelson interferometer with an optical path difference of 1 m,as well as the phase-generated carrier technique,is used to measure the phase noise.It is found that the phase noise is small when the input power is below the stimulated Brillouin scattering threshold,increases dramatically at first and then gradually becomes flat when the input power is above the threshold,which is similar to the variation in relative intensity noise.It can be inferred that the increase in phase noise is mainly due to the broadening of the laser linewidth caused by stimulated Brillouin scattering,which is verified through linewidth measurements in the absence and presence of the stimulated Brillouin scattering.     

高效液相色谱-串联质谱法测定泡沫灭火材料及其他材料中的全氟辛烷磺酸及其盐

建立了一种高效液相色谱-串联质谱(HPLC-MS/MS)测定泡沫灭火材料、洗涤剂以及织物整理剂中全氟辛烷磺酸及其盐(PFOS)的方法。对应产品中的PFOS用水超声提取后,经固相萃取柱淋洗萃取,萃取液以乙腈-10 mmol/L乙酸铵溶液(80:20, v/v)为流动相进行HPLC分离,在负离子模式和多级反应监测(MRM)方式下进行测定。用两个子离子的相对丰度定性,外标法定量。PFOS的测定在0.002~0.1 mg/L范围内线性关系良好(r2=0.998);泡沫灭火材料、洗涤剂以及织物整理剂中PFOS的加标回收率分别为93.4%～103%, 93.2%～102%和91.8%～102%,精密度(以相对标准偏差(RSD)计)分别为0.48%～3.52%, 0.78%～1.79%和0.47%～3.47%;方法的检出限均为2 mg/kg(0.0002%)(信噪比（S/N）≥10),满足欧盟法规对泡沫灭火材料、洗涤剂以及织物整理剂中PFOS的限量检测要求。该方法准确度和灵敏度高,前处理简单,可用于泡沫灭火材料、洗涤剂以及织物整理剂中PFOS的检测。     

金属泡沫填充薄壁圆管的轴压载荷-位移关系

将泡沫填充圆管的能量吸收视为泡沫与圆管两者之和, 基于包含偏心率效应的直链塑性铰模型和Reddy等对Alexander模型的改进结果, 对圆管的变形模式进行了更改, 以此来反映管壁与金属泡沫之间的相互作用效应, 导出了金属泡沫填充圆管的静、动态轴向平均压溃力的表达式. 通过理论预测与实验的对比, 发现理论预测偏低, 但与实验曲线的趋势保持一致, 比空管与金属泡沫的平均载荷之和略高一些. 此外, 泡沫填充圆管的平均压溃力随填充泡沫平台应力的增大而呈线性增加, 与已有研究结果及实际情况一致, 由此表明了模型的合理性.      

1,3-二苯基-2-吡唑啉纳米带的制备及其光波导性质

以1,3-二苯基-2-吡唑啉(DP)为目标化合物, 利用再沉淀方法, 以混合溶剂作为不良溶剂, 制备了形貌均一、宽度约2 μm、厚度200 nm和长度数十微米的一维纳米带状结构. 选区电子衍射结果证实, DP分子在纳米带中因为强的分子间π-π相互作用而沿着晶体[100]方向优势生长. 稳态光谱结果表明, DP纳米带具有不同于分子和体相材料的介观特性. 由于J-聚体在DP纳米带中优势形成, 其480 nm的发射峰与分子和体相材料相比分别红移了30和20 nm. 利用扫描近场光学显微镜进一步发现, 一维DP纳米带类似于天然的亚波长尺度谐振腔, 紫外激发DP分子发射的荧光被限域在DP纳米带中, 沿一维方向传导并在两端耦合输出.     

研究性核反应堆的现状、应用和发展

回顾了世界过去50多年研究堆的发展历程,分析了世界研究堆的现状以及未来的应用发展趋势,同时结合我国脉冲堆的实际情况,对其应用发展前景进行了初步展望。     

纳米晶复合永磁材料的交换耦合相互作用和磁性能

本介绍了纳米磁性材料晶粒交换耦合相互作用的有关理论。采用不同模型讨论了晶粒交换耦合相互作用对纳米单相软磁材料、永磁材料及双相复合永磁材料磁性能的影响。简述了用δM（H）曲线和不可逆磁导率的变化研究晶粒交换耦合相互作用及反磁化过程的方法。讨论了合金分配比、添加元素、制备及热处理工艺对磁体硬磁性能的影响。从理论和实验两方面分析、研究了纳米复合永磁材料的反磁化过程和矫顽力机制。     

高矫顽力HDDR各向同性Nd-Dy-Fe-Co-B黏结磁体的磁性能与微结构

研究了添加微量元素Co和Dy对HDDR工艺制备各向同性Nd-Dy-Fe-Co-B粘结磁体磁性能的影响. 结果表明, (Nd_0.65Dy_0.35)12.5(Fe_0.9Co_0.1)₈₁B_6.5磁体的内禀矫顽力H_cj高达1.53 MA·m^-1,剩磁的可逆温度系数为-0.059%/℃（25～155℃）. 使磁体具有高矫顽力、低温度系数的原因一方面是由于Dy和Co的加入提高了硬磁性相的各向异性场和T_C温度,另一方面是由于材料显微结构的改善.     

羧甲基壳聚糖对铅离子的吸附性能研究

本文研究羧甲基壳聚糖对Pb^2 的吸附作用,探讨反应时间,离子强度,溶液的PH值、羧甲基取代度,温度等因素对吸附性能的影响,结果表明羧基是吸附Pb^2 的主要活性基团,羧甲基壳聚糖对Pb^2 的饱和吸附量为3．1083mmol/g,吸附Pb^2 的能力比壳聚糖,水溶性低聚壳聚糖强。     

Numerical method of studying nonlinear interactions between long waves and multiple short waves

Although the nonlinear interactions between a single short gravity wave and a long wave can be solved analytically, the solution is less tractable in more general cases involving multiple short waves. In this work we present a numerical method of studying nonlinear interactions between a long wave and multiple short harmonic waves in infinitely deep water. Specifically, this method is applied to the calculation of the temporal and spatial evolutions of the surface elevations in which a given long wave interacts with several short harmonic waves. Another important application of our method is to quantitatively analyse the nonlinear interactions between an arbitrary short wave train and another short wave train. From simulation results, we obtain that the mechanism for the nonlinear interactions between one short wave train and another short wave train (expressed as wave train 2) leads to the energy focusing of the other short wave train (expressed as wave train 3). This mechanism occurs on wave components with a narrow frequency bandwidth, whose frequencies are near that of wave train 3.