羟基磺基甜菜碱氟碳表面活性剂在油水界面的扩张粘弹性

氟碳表面活性剂是目前表面活性最高的特种表面活性剂,在三次采油等领域具有良好的应用前景。 用小幅周期振荡法研究了羟基磺基甜菜碱型氟碳表面活性剂(FS)在油-水界面的扩张粘弹性能,考察了振荡频率、FS质量分数、无机盐(NaCl、CaCl₂、MgCl₂)对FS在油-水界面的扩张粘弹性能的影响。 结果表明,FS溶液在油水界面的扩张模量、扩张弹性和扩张粘度随着FS质量分数的增加而出现最大值,随着频率的增大而略有增加。 加入无机盐时,扩张模量、扩张弹性随NaCl质量分数增大而出现最大值,而随着CaCl₂或者MgCl₂质量分数的增加,FS溶液的扩张模量、扩张弹性和扩张粘度减小,而当CaCl₂或者MgCl₂质量分数分别为0.05%、0.1%时,tanθ达到最大值。     

低温GaN插入层对AlGaN/GaN二维电子气特性的改善

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响.使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发现低温GaN插入层可以改善材料表面平整度并使AlGaN/GaN 2DEG的电子迁移率有明显提高,GaN插入层温度为860℃的样品在室温下2DEG的电子迁移率达到2110 cm2/V·s.     

高压下铌酸锌钶铁矿结构相变的原位拉曼光谱和X射线衍射研究

通过原位高压拉曼光谱和X射线衍射对ZnNb₂O₆晶体在29 GPa以下的结构转变进行了研究.拉曼光谱显示, 多数拉曼峰强度减弱, 且随着压力增加向高波数方向移动.压力频移曲线分别在10, 16 和20 GPa处形成了拐点.原位X射线衍射谱在10.6 GPa以上有旧峰消失和新峰出现.结果分析表明, ZnNb₂O₆钶铁矿结构压缩过程中发生了一个可逆压致相变, 此相变从10 GPa左右开始, 到16 GPa左右完成, 继续增加压力到20 GPa以上则形成无序状态.     

聚吡咯包裹碳化硅气凝胶复合材料的电化学和吸波性能

聚吡咯(polypyrrole, PPy)由于具有高比电容、高电导率、高柔韧性和结构多样性而被用作超级电容器的电极材料,而且可以与其他材料复合,能够提高介电损耗从而提高吸波性能。采用化学原位聚合法,合成了PPy包覆SiC气凝胶复合材料,有效解决了PPy在充放电过程中因离子的掺杂和去掺杂而变得不稳定,导致PPy基超级电容器循环稳定性下降等问题。用三电极体系测试复合材料的电化学性能,用矢量网络分析仪进行电磁参数测试。结果表明,在0.5 A·g^-1的电流密度下比电容达309.65F·g^-1,在1000次循环后比电容保持率为94.2%,具有良好的循环稳定性;气凝胶经历了100次砝码的反复压能保持95%的高度,抗压强度可达105 kPa;在2.2 GHz的有效吸收强度为22.32 dB,而PPy只有8.99 dB,有效提高了吸收强度。因此,SiC/PPy复合材料是很有应用前景的超级电容器电极材料和电磁波吸收材料。     

反相微乳液模板原位聚合制备纳米氯化银/聚甲基丙烯酸甲酯及其结构表征

用甲基丙烯酸甲酯(MMA)作油相,反相胶束微乳液作为模板,制备了纳米氯化银(AgCl)粒子,再进行原位聚合制备了纳米氯化银/聚甲基丙烯酸甲酯(AgCl/PMMA)复合材料.透射电镜(TEM)分析表明,纳米AgCl的尺寸为20～80 nm.扫描电镜(SEM)测试表明纳米AgCl粒子均匀地存在于PMMA基材中.红外分析证明,胶束中水和表面活性剂AOT的羰基在MMA聚合后微观环境发生变化,纳米粒子同聚合物之间有吸附行为.动态力学(DMTA)分析复合材料,发现纳米AgCl粒子与聚合物之间存在强烈相互作用,形成了中间相层(interphase layer),改变了聚合物的动态力学性能.     

Photoluminescence evolution in self-ion-implanted and annealed silicon

Si⁺ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950~℃ and then characterized by using the photoluminescence (PL) technique at different recorded temperatures (RETs). Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant W^\rm TA and Si^\rm TO peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800~\du, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D_1 and D₂ bands, can be observed at a temperature as high as 280~K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.     

Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and capacitance-voltage （C-V） measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.     

分级花状氧化铁微球的水热合成及吸附性能研究

以六次甲基四胺、硫酸亚铁、柠檬酸钠为原料,采用水热合成方法制备了三氧化二铁(Fe_2O_3)粉体。以铅离子为水体中的模拟污染物,研究了Fe_2O_3对水体中重金属离子的吸附性能,结果表明,当柠檬酸钠的浓度为0.004 mol/L、水热温度为100℃和水热时间为8 h时,所制备的Fe_2O_3的吸附性能最好,其对铅离子的吸附容量为426.09 mg/g。X射线衍射(XRD)图片和扫描电子显微镜(SEM)照片显示所制备的粉体为低结晶度的分级花状Fe_2O_3微球。     

Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.     

基质对Tb3+单掺荧光玻璃发光性质的影响

采用高温熔融法制备了Tb³⁺单掺硼酸盐、硅酸盐和磷酸盐荧光玻璃和相应的玻璃基质。根据紫外-可见透射光谱计算了Tb³⁺在不同基质中从⁷F₆ 到⁵D₃和 ⁵D₄能级的实验振子强度,解释了不同基质中Tb³⁺发射光谱的变化原因。结果表明：因为对称性差,在磷酸盐玻璃基质中,Tb³⁺在542 nm和585 nm处的发射峰有劈裂现象。在硼酸盐和硅酸盐基质中,Tb³⁺ 的⁵D₃能级上的粒子通过交叉弛豫过程被倒空并转移到⁵D₄能级,故⁵D₃能级发光（413 nm和436 nm）不明显;在磷酸盐基质中,Tb³⁺的⁵D₃能级上的粒子数较少,没有交叉弛豫产生,故⁵D₃能级发光最强。在3种基质中,Tb³⁺从⁵D₄能级发射的特征峰489,542,585,620 nm的强度顺序是硼酸盐>硅酸盐>磷酸盐,与Tb³⁺在不同基质中从⁷F₆ 到 ⁵D₄能级的实验振子强度顺序一致。