Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode |
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| Authors: | Li Liang Yang Lin-An Zhou Xiao-Wei Zhang Jin-Cheng and Hao Yue |
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| Affiliation: | School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of l~ducation, |
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| Abstract: | Photoluminescence (PL) measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy (SIMS), transmission electron microscope (TEM), and capacitance-voltage (C-V ) measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 10 11 cm 2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results. |
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| Keywords: | GaN terahertz Gunn diode point defect photoluminescence capacitance-voltage |
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