Evidence for Multiple Underlying Fermi Surface and Isotropic Energy Gap in the Cuprate Parent Compound Ca_2CuO_2Cl_2

The parent compounds of the high-temperature cuprate superconductors are Mott insulators.It has been generally agreed that understanding the physics of the doped Mott insulators is essential to understanding the mechanism of high temperature superconductivity.A natural starting point is to elucidate the basic electronic structure of the parent compound.Here we report comprehensive high resolution angle-resolved photoemission measurements on Ca_2CuO_2Cl_2,a Mott insulator and a prototypical parent compound of the cuprates.Multiple underl.ying Fermi surface sheets are revealed for the first time.The high energy waterfall-like band dispersions exhibit different behaviors near the nodal and antinodal regions.Two distinct energy scales are identified:a d-wave-like low energy peak dispersion and a nearly isotropic lower Hubbard band gap.These observations provide new information of the electronic structure of the cuprate parent compound,which is important for understanding the anomalous physical properties and superconductivity mechanism of the high temperature cuprate superconductors.     

5-甲基异NFDA1唑-3-甲酰胺合成工艺的改进

讨论了以草酸二乙酯为原料,经过克莱森缩合、环合、氨解反应合成５－甲基异恶唑－３－甲酰胺工艺改进。各部收率均高于文献报道收率,总由原工艺的４０％提高到现工艺的５７％。     

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

Tunable distributed Bragg reflector (DBR) lasers are essential components for future optical fiber communi- cation systems[1]. A tunable laser can replace a large number of distributed feedback (DFB) lasers as sparing source in wavelength division multiplexing (WDM) sys- tems. Moreover they allow flexible switching and routing for distributed data in future network[2]. There are several methods for integrating gain sec- tion with DBR section, such as butt-joint method, bundle method, and …     

Electronic structure of heavy fermion system CePt_2In_7 from angle-resolved photoemission spectroscopy

We have carried out high-resolution angle-resolved photoemission measurements on the Ce-based heavy fermion compound CePt_2In_7 that exhibits stronger two-dimensional character than the prototypical heavy fermion system CeCoIn_5.Multiple Fermi surface sheets and a complex band structure are clearly resolved. We have also performed detailed band structure calculations on CePt_2In_7. The good agreement found between our measurements and the calculations suggests that the band renormalization effect is rather weak in CePt_2In_7. A comparison of the common features of the electronic structure of CePt_2In_7 and CeCoIn_5 indicates that CeCoIn_5 shows a much stronger band renormalization effect than CePt_2In_7. These results provide new information for understanding the heavy fermion behaviors and unconventional superconductivity in Ce-based heavy fermion systems.     

维生素D_2-A和CD片段醇的合成工艺改进

以维生素D_2(V-D_2)为原料,经高锰酸钾氧化、选择性切断和还原反应同时合成了维生素D_2-A(总产率30%)和CD片段醇(总产率45%),其结构经~1H NMR确证。     

新型含取代噁二唑结构的吡唑肟类化合物的合成与生物活性研究

为了寻找具有较好生物活性的吡唑肟类衍生物,采用活性基团拼接方法,设计合成了一系列新型含取代噁二唑结构的吡唑肟类化合物.利用~1H NMR、~(13)C NMR和元素分析等手段确证了目标化合物的结构.初步的生物活性测试结果表明,部分目标化合物显示出较好的杀虫活性.当测试浓度降为100μg/m L时,3个化合物对粘虫仍具有较好的杀虫效果,杀死率分别为70%,60%和70%.另外,1个化合物在测试浓度为500μg/m L时对蚜虫也表现出一定的杀虫作用,杀死率为60%.     

高效原油破乳剂GE-189的制备与应用研究

以分子量大、活泼氢多、具有分支结构的瓜胶作起始剂，与环氧乙烷、环氧丙烷加成，首次合成出具有分支结构的瓜胶类原油破乳剂GE－189，并把这种破乳剂及其与常规破乳剂F3111的复配体系应用于不同油田原油乳状液的室内破乳脱水试验。结果表明，破乳剂复配体系在脱水速率、脱水效果等方面均优于各现场剂，把这种破乳剂与生物表面活性剂复配，于巴西海上油田原油乳状液的破乳脱水，能够显著提高原油乳状液的破乳脱水速率和脱水体积，两者之间表现出明显的协同作用。     

一道高考压轴题的加强

2005年高考重庆卷（理）压轴题为：数列{an}满足a1=1，且an＋1=（1＋1/n^2＋n）an＋1/2^n（n≥1）.     

Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.     

Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the com- bination of a growth temperature of 490℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10^-6 Torr （1 Torr = 1.33322×10^2 Pa）, provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a 19.7-GHz repetition rate.