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11.
Anisotropic energy distribution of sputtered atoms induced by low energy heavy ion bombardment 总被引:1,自引:0,他引:1
Lai Zhang 《辐射效应与固体损伤》2013,168(8):337-347
The theory of anisotropic sputtering published in Phys. Rev. B 71(2), 026101 (2005) and Radiat. Effects Defects Solids 159(5), 301 (2004) has been modified and used to calculate the sputtering yield energy distributions for copper, tungsten, and aluminum targets bombarded by low-energy argon ion. As usual, the electronic stopping is ignored in the analysis. The present theory (modified Sigmund’s theory) has been shown to fit the corresponding experimental results of sputtering yield energy distributions well, except for the cases where the larger ion incident angle and larger sputtering emission angles were considered. The larger discrepancy between the present theory and the experimental result in the latter cases is probably due to the influence of direct recoil atoms on the energy spectrum. Compared with Falcone’s analytical theory, the present theory can reproduce much better experimental results of sputtering phenomena. The fact clearly demonstrates the intrinsic relation between the ion–energy dependence of the total sputtering yield and the sputtering yield energy distribution and suggests the great importance of momentum deposited on the target surface in the physical sputtering 相似文献
12.
13.
The thickness of the altered layer created by ion bombardment of the 6H–SiC single crystal was determined by means of Auger electron spectroscopy (AES) depth profiling in conjunction with factor analysis. After pre-bombardment of the surface by argon ions with energies 1, 2 and 4 keV until the steady state, the depth profiles of the induced altered layers were recorded by sputtering with low energy argon ions of 300 eV. Since the position and shape of the carbon Auger peak depend on the perfection of the crystalline structure, they were used for depth profile evaluation by factor analysis. In this way the depth profiles of the damaged surface region could be estimated in dependence on the ion energy. As a result, the thickness of the altered layer of SiC bombarded with 1, 2 and 4 keV Ar ions using an incident angle of 80° as well as the corresponding argon implantation profile could be measured. 相似文献
14.
R. P. Chiarello H. You H. K. Kim T. Roberts R. T. Kempwirth D. Miller K. E. Gray K. G. Vandervoort N. Trivedi S. R. Phillpot Q. J. Zhang S. Williams J. B. Ketterson 《Surface science》1997,380(2-3):245-257
We performed in-situ X-ray reflectivity measurements of gold films during sputter deposition on polished silicon substrates. The measurements were performed at several substrate temperatures and under two argon pressures. The gold surfaces were also examined by scanning tunneling microscopy after deposition to obtain their real-space topographic images. These images were used to complement the X-ray reflectivity measurements in determining the effect of argon pressure on the gold surface and its height-height difference functions. An approximation for height-height difference functions was employed to analyze the X-ray reflectivity data. The measured interface width during growth followed a simple power law, consistent with recent theoretical results of dynamic scaling behavior. The scaling exponents, however, do not agree well with predictions based on some models in 2 + 1 dimensions. 相似文献
15.
The erosion of target materials with energetic ions can lead to the formation of patterns on the surface. During low-energy (?2000 eV) noble gas (Ne+, Ar+, Kr+, Xe+) ion beam erosion of silicon surfaces dot patterns evolve on the surface. Dot structures form at oblique ion incidence of 75° with respect to surface normal, with simultaneous sample rotation, at room temperature. The lateral ordering of dots increases while the dot size remains constant with ion fluence, leading to very well ordered dot patterns for prolonged sputtering. Depending on ion beam parameters, dot nanostructures have a mean size from 25 nm up to 50 nm, and a mean height up to 15 nm. The formation of dot patterns depends on the ion/target mass ratio and on the ion energy. The temporal evolution and the lateral ordering of these nanostructures is studied using scanning force microscopy (AFM). 相似文献
16.
Energy and size effects in sputtering of surface metal nanoclusters under low energy ion bombardment
Molecular dynamics simulations of sputtering of copper clusters, which consisted of 13, 27, 39, 75 and 195 Cu atoms on a (0 0 0 1) graphite surface by 100-400 eV Ar and Xe ions have been performed. Some of the results have been published previously [Nucl. Instru. Meth. B 227 (2005) 261 and Nucl. Instru. Meth. B 228 (2005) 41], but are again discussed here together with additional results. Energy and size effects of ion backscattering from and sputtering of isolated surface clusters are discussed. 相似文献
17.
XPS measurement revealed that the original state of TiO2 was changed to Ti2O3 and TiO by ion bombardment. TiO2 decreased and Ti2O3 increased at the initial stage. TiO increased at a later stage than Ti2O3. Each of them saturated after enough sputtering time.A formulation was proposed in order to explain the change of XPS spectra for oxides as a function of ion sputtering time. This formulation was based on reaction equations that contain two reduction processes (from TiO2 to Ti2O3 and from Ti2O3 to TiO), and sputtering effects. Using four fitting parameters (two reduction coefficients, sputtering yield and information depth), the present formula was fitted to the experimental results. The fitting results agree satisfactorily with the experimental results. The calculation shows that the reduction coefficient from TiO2 to Ti2O3 is about ten times larger than that from Ti2O3 to TiO. This calculation predicts that surface composition of an oxide that is changed by ion bombardment will reach a different value depending on its bulk composition. Moreover, the present formulation can determine the chemical states of compounds changed by ion bombardment. 相似文献
18.
Antonio Martín Agurtzane Martínez Rosario Pereiro Nerea Bordel Alfredo Sanz-Medel 《Spectrochimica Acta Part B: Atomic Spectroscopy》2007
The determination of sputtering rates is, commonly, an important parameter in glow discharge analyses. In particular, in those quantification procedures where the emission yield plays an important role in calibrations, the correct calculation of such value becomes crucial. The volumetric methods to calculate the sputtering rates (they offer a higher accuracy than the gravimetric ones) aim to measure the crater volume created in the sample during the analysis. The standard approximation assumes the crater as a cylinder and so it is mandatory to achieve crater shapes with a flat bottom and walls perpendicular to it. But in practice, craters show many times a convex (or concave) bottom which depends on the measurement conditions. 相似文献
19.
介绍了利用辉光放电光谱法分析掺杂纳米硅薄膜,通过优化辉光光源激发参数、计算标准样品的溅射率,建立了掺杂纳米硅薄膜的定量表面分析方法。方法应用于实际掺杂纳米硅薄膜样品的分析,并将分析深度、剖析结果与表面形貌仪的结果进行了对照。试验结果表明,分析方法快速、准确,具有实际应用价值。 相似文献
20.
We report in this study the presence of Janus particles, which are candidates for use with electronic color papers. We used negatively charged polystyrene particles (370 nm) as the core particles, and gold was then sputtered onto their packed monolayer under several conditions. The sputtered particles were next redispersed into the aqueous medium by gentle sonication. Gold nanoparticles localized on one side of the cores could also serve as seeds for subsequent shell growth by electroless gold plating. Through these treatments, a series of well-dispersed Janus particles were obtained with gold nanostructures of different size and shape only on one side. Their dispersions showed different colors originating from the surface plasmon resonance absorption of gold nanoparticles localized on the hemisphere. The particles obtained by this approach have potential applications such as in sensors and electronic color paper. 相似文献