Novel disposable bismuth-sputtered electrodes for the determination of trace metals by stripping voltammetry

This work describes a novel type of bismuth electrode for stripping voltammetry based on coating a silicon substrate with a thin bismuth film by means of sputtering. The bismuth-based sensors were characterized by optical methods (scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD)) and as well as by linear sweep voltammetry. Subsequently, the electrodes were tested for the detection of low concentrations of trace metals (Cd(II), Pb(II) and Ni(II)) by stripping voltammetry. Well-formed stripping peaks were observed for trace concentrations of the target analytes demonstrating “proof-of-principle” for these sensors. This type of electrochemical device, utilizing thin-film technology for the formation of the bismuth film, holds promise for future applications in trace metal analysis.     

Gold coatings on polyethyleneterephthalate nano-patterned by F2 laser irradiation

In this work we present periodic surface structures generated by linearly polarized F₂ laser light (157 nm) on polyethyleneterephthalate (PET). Atomic force microscopy was used to study the topological changes induced by the laser irradiation. The laser irradiation induces the formation of periodic ripple structures with a width of ca 130 nm and a height of about 15 nm in the fluence range 3.80-4.70 mJ/cm² and the roughness of the polymer surface increases due to the presence of these periodic structures. Subsequently, the laser modified PET foils were coated with a 50 nm thick gold layer by sputtering. After Au deposition on the PET foils with ripple structure, the roughness of surface decreases in comparison to PET with ripples without Au coating. For 50 nm thick Au layers, the ripple structure is not directly transferred to the gold coating, but it has an obvious effect on the grain size of the coating. With considerably thinner Au layers, the ripple structures are smoothened but preserved.     

Structural investigations of TiO2:Tb thin films by X-ray diffraction and atomic force microscopy

In this work, structural investigations of TiO₂ thin films doped with Tb at the amount of 0.4, 2 and 2.6 at.% have been outlined. Thin films were deposited on Si and SiO₂ substrates by high energy reactive magnetron sputtering from mosaic Ti-Tb target. The influence of Tb dopant amount, post-annealing treatment and kind of applied substrate on microstructure has been discussed. Thin films were investigated by means of X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed the existence of crystalline TiO₂ in anatase and rutile forms, depending on Tb amount in examined samples. AFM images show that as-deposited samples with 0.4 at.% concentration of terbium (anatase structure) have bigger crystallites as compared to 2% and 2.6 at.% of Tb (rutile structure). The additional annealing at 1070 K results in a mixed anatase (77%) and rutile (23%) structure.     

Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

Titanium oxynitride (TiN_xO_y) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN_xO_y films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm² to 7 W/cm². The maximum deposition rate occurs, as the substrate bias is −40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN_xO_y films deposited at power densities above 4 W/cm² show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN_xO_y films reach values as low as 0.98 g/m²-day-atm and 0.60 cm³/m²-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al₂O₃ barrier films. Therefore, TiN_xO_y films are potential candidates to be used as a gas permeation barrier for PET substrate.     

Microstructure and magnetic properties of Ni-rich Ni54Mn25.7Ga20.3 ferromagnetic shape memory alloy thin film

A Ni₅₄Mn_25.7Ga_20.3 ferromagnetic shape memory alloy thin film has been fabricated by using the RF magnetron-sputtering technique. The structure and magnetic properties of the film were systematically investigated. The results show that the film is in ferromagnetic martensite state at room temperature with the Curie temperature (T_c) of about 370 K. The saturation magnetization (M_s) of the film reaches 45 emu/g at 300 K, which is about 80% as large as that of Ni–Mn–Ga bulk material. The magnetization hysteresis loops significantly depend on temperatures. The residual magnetization (M_r) and the coercive force (H_c) increase with decreasing temperatures. The grains homogeneously distribute in the film. The microstructure of the film consists of martensite plates. The interface between the martensite variants is clear and straight, indicating a good mobility.     

Development and integration of near atmospheric N2 ambient sputtered Au thin film for enhanced infrared absorption

The exceedingly fragile nature of thermally grown Au-black coating makes handling and patterning a critical issue. Infrared absorption characteristics of near atmospheric, N₂ ambient DC sputtered Au thin films are studied for this purpose. The thin Au films are sputtered at different chamber pressures in Ar and N₂/Ar gas ambient from 4.5 to 8.0 mbar and optimized for enhanced infrared absorption. The absorber film sputtered in N₂/Ar ambient at 8.0 mbar chamber pressure offers significant absorption of medium to long wave infrared radiations. The micro-patterning of sputtered Au thin film is carried out by using conventional photolithography and metal lift off methods on a prefabricated µ-infrared detector array on Si (1 0 0) substrate. The steady state temperature response of sputtered film has been examined using nondestructive thermal imaging method under external heating of the detector array.     

Detection of Cadmium and Copper Cations Using Amorphous Nitrogenated Carbon Thin Film Electrodes

Nitrogenous amorphous carbon (a‐CN_x) thin films were deposited by radio‐frequency cathodic magnetron sputtering (13.56 MHz) on polished and etched titanium disks. While these films are cheaper to prepare than commonly reported carbon‐based electrodes, the usable electrochemical window in aqueous solution is within the same range and spans from ?1.5 to +1.8 V vs. SCE. The electrochemical reactivity was tested using the ferri‐ferrocyanide redox couple as a function of the thin films preparation parameters. The obtained electrochemical properties allow the use of these a‐CN_x thin films for stripping electroanalysis of cations in water, minimizing potential solvent reactivity. Cadmium and copper were used to test these detection abilities. Better analytical properties (notably sensitivity and linearity) were obtained as compared to a commercial boron doped diamond electrode. Preliminary competition/interaction experiments for these two cations were performed.     

High power impulse magnetron sputtering (HIPIMS) and traditional pulsed sputtering (DCMSP) Ag-surfaces leading to E. coli inactivation

This study addresses the high power impulse magnetron sputtering (HIPIMS) deposition of Ag-nanoparticle films on polyester and the comparison with films deposited by direct current pulsed magnetron sputtering (DCMSP). The first evidence is presented for the Escherichia coli bacterial inactivation by HIPIMS sputtered polyester compared to Ag-polyester sputtered by DCMSP. HIPIMS layers were significantly thinner than the DCMSP sputtered layers needing a much lower Ag-loading to inactivate E. coli within the same time scale. The Ag-nanoparticle films sputtered by DCMSP at 300 mA for 160 s was observed to inactivate completely E. coli within 2 h having a content of 0.205% Ag wt%/polyester wt%. HIPIMS-sputtered at 5 A for 75 s led to complete E. coli bacterial inactivation also within 2 h having a content Ag 0.031% Ag wt%/polyester wt%. The atomic rate of deposition with DCMSP is 6.2 × 10¹⁵ atoms Ag/cm² s while with HPIMS this rate was 2.7 × 10¹⁵ atoms Ag/cm² s. The degree of ionization of Ag⁺/Ag²⁺ and Ar⁺/Ar²⁺ was proportional to the target current applied during HIPIMS-sputtering as determined by mass spectroscopy. These experiments reveal significant differences at the higher end of the currents applied during HIPIMS sputtering as illustrated by the ion-flux composition. X-ray photoelectron spectroscopy (XPS) was used to determine the surface atomic concentration of O, Ag, and C on the Ag-polyester. These surface atomic concentrations were followed during the E. coli inactivation time providing the evidence for the E. coli oxidation on the Ag-polyester. X-ray diffraction shows Ag-metallic character for DCMSP sputtered samples for longer times compared to the Ag-clusters sputtered by HIPIMS leading to Ag-clusters aggregates. Ag-nanoparticle films on polyester sputtered by HIPIMS contain less Ag and are thinner compared to Ag-nanoparticle films sputtered by DCMSP.     

Thermal Neutron damage in cadmium

The isochronal annealing of the damage produced by thermal neutron irradiation of cadmium at 3.6 °K has been studied for several initial doses which vary by a factor of 1000. The recovery results show a strong dependence upon initial dose. This effect, which is not seen to this extent in the fcc metals, cannot be accounted for by an irradiation annealing mechanism. In contrast to the observation of two processes involving long range defect migration for several fcc metals only one process, at high temperatures, is discernable from isochronal annealing of Cd. The presence of another process at low temperatures is clearly established by other means. Irradiation annealing effects observed during the production of damage at high defect concentrations indicate that the spontaneous annihilation volume between the defects of a new capture event and the defects from an earlier event is 80 atomic volumes. Other results suggest that damage production and recovery mechanisms may be associated with the anisotropic nature of the cadmium hexagonal lattice.     

Influence of hole mobility on the response characteristics of p-type nickel oxide thin film based glucose biosensor

RF sputtered p-type nickel oxide (NiO) thin film exhibiting tunable semiconductor character which in turns enhanced its functional properties. NiO thin film with high hole mobility is developed as a potential matrix for the realization of glucose biosensor. NiO thin film prepared under the optimized deposition conditions offer good electrical conductivity (1.5 × 10⁻³ Ω⁻¹-cm⁻¹) with high hole mobility (2.8 cm² V⁻¹ s⁻¹). The bioelectrode (GO_x/NiO/ITO/glass) exhibits a low value of Michaelis–Menten constant (K_m = 1.05 mM), indicating high affinity of the immobilized GO_x toward the analyte (glucose). Due to the high surface coverage (2.32 × 10⁻⁷ mol cm⁻²) of the immobilized enzyme on to the NiO matrix and its high electrocatalytic activity, the prepared biosensor exhibits a high sensitivity of 0.1 mA (mM⁻¹-cm⁻²) and a good linearity from 25 to 300 mg dL⁻¹ of glucose concentration with fast response time of 5 s. Various functional properties of the material (mobility, crystallinity and stress) are found to influence the charge communication feature of NiO thin film matrix to a great extent, resulting in enhanced sensing response characteristics.