双群模型在偏滤器材料溅射研究中的应用

为了估计偏滤器靶板材料的腐蚀速率和寿命，应用基于离子输运双群模型的溅射理论计算了聚变带电粒子H^ 、D^ 、T^ 和α粒子轰周Mo、W和Li偏滤器靶板表面的溅射产额，并与蒙特卡罗方法的计算结果作了比较。这些数据对估计对等离子体部件的寿命和堆芯等离子体中的杂质水平是有意义的。     

Preparation of non-contact ordered array of polystyrene colloidal particles by using a metallic thin film of fused hemispheres

A thin metallic bilayer consists of fused hollow hemispheres of 930 nm in diameter is fabricated by sputter deposition of Ti and Fe at 50 and 5 nm of thickness, respectively, onto an array of spherical polystyrene colloidal particles. The fused metal hemispheres are utilized to assemble polystyrene colloidal particles of smaller diameters (800 nm) into non-contact two-dimensional periodic array by trapping them in the metallic wells.     

Dry etching of ITO by magnetic pole enhanced inductively coupled plasma for display and biosensing devices

The dry etching of indium tin oxide (ITO) layers deposited on glass substrates was investigated in a high density inductively coupled plasma (ICP) source. This innovative low pressure plasma source uses a magnetic core in order to concentrate the electromagnetic energy on the plasma and thus provides for higher plasma density and better uniformity. Different gas mixtures were tested containing mainly hydrogen, argon and methane. In Ar/H₂ mixtures and at constant bias voltage (−100 V), the etch rate shows a linear dependence with input power varying the same way as the ion density, which confirms the hypothesis that the etching process is mainly physical. In CH₄/H₂ mixtures, the etch rate goes through a maximum for 10% CH₄ indicating a participation of the radicals to the etching process. However, the etch rate remains quite low with this type of gas mixture (around 10 nm/min) because the etching mechanism appears to be competing with a deposition process. With CH₄/Ar mixtures, a similar feature appeared but the etch rate was much higher, reaching 130 nm/min at 10% of CH₄ in Ar. The increase in etch rate with the addition of a small quantity of methane indicates that the physical etching process is enhanced by a chemical mechanism. The etching process was monitored by optical emission spectroscopy that appeared to be a valuable tool for endpoint detection.     

Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering

Hydrogenated amorphous silicon nitride thin films are deposited by DC magnetron sputtering in argon, and molecular hydrogen and nitrogen mixture. The samples are characterized by electrical measurements and by optical transmission. The physicochemical structure is studied by FTIR spectrum analysis. The results show that both nitrogen and hydrogen are incorporated. The ratio [N]/[Si] increases with increasing hydrogen partial pressure. The deposited films are used in MIS structures. The capacitance–voltage characteristics are carried out. The deposited samples present a large gap and show a nearly chemical stoichiometric composition.     

Room-temperature growth of carbon nanofibers on plastic substrates

A very simple method to synthesize densely distributed carbon nanofibers (CNFs) on flexible plastic substrates at room temperature with no catalyst is demonstrated. Carbon film was deposited onto polyimide, poly-ethylene-terephthalate (PET) films, Si plates and a Ni mesh, which were then sputtered with obliquely incident Ar⁺ ions at 3 keV at room temperature. Linear-shaped CNFs oriented in the incidence direction of the ion beam grew on the sputtered substrates, as confirmed by scanning (SEM) and transmission electron microscopes (TEM). CNF growth on a PET substrate, which is a non-heat-tolerant plastic, has never been reported so far. CNFs thus grown were characterized as amorphous without a hollow structure. The diameter of CNFs was almost identical (20-30 nm) despite a large difference in CNF length (0.1-4 μm). In addition, the CNF-tipped cones were demonstrated to act successfully as a template to fabricate one dimensional (1-D) zinc oxide (ZnO) nanostructures on a PET substrate. Thus, it was believed that the ion-irradiation technique would open up a new approach to fabricate any kinds of 1-D nanomaterials on flexible substrates at room temperature.     

Sputtering of clusters from nickel-aluminium

A NiAl(1 1 1) single crystal was bombarded with 15 keV Ar⁺, and the resulting secondary neutrals were analysed by laser postionisation secondary neutral mass spectrometry. By measuring the individual cluster photoion intensity as a function of laser power, the sputter yields of 33 individual clusters were determined. The yield of Al_n clusters sputtered from NiAl falls with increasing cluster nuclearity as n^−8.7 while Ni_n and Al_m−nNi_n yields are proportional to n^−5.9 and n^−5.2, respectively. The distribution of thee yields of mixed Al_m−nNi_n clusters with n and m is found to diverge significantly from the expected distribution based on a random combinatorial approach, indicating that the energetics due to the chemical bonding in the clusters plays a significant role during cluster formation in the sputtering process.     

Er emission from Er-doped Si-rich silicon oxide layers synthesised by hydrogen reactive magnetron co-sputtering

Among the systems used as optical amplifiers, we propose an original way to elaborate photoluminescent materials. The method is based on the reactive RF magnetron co-sputtering of SiO₂ and Er₂O₃ controlled by the hydrogen dilution rate in the plasma gas. The relationship between the photoluminescence properties and the structural characteristics is evidenced through the variation of two parameters in the deposition process: the hydrogen partial pressure within the plasma and the sputtered surface ratio of Er₂O₃ and SiO₂ targets.     

The effect of bias voltage and working pressure on S/Mo ratio at MoS2-Ti composite films

S/Mo ratio has a crucial effect on the tribological properties of MoS₂-Ti composite films. The deposition parameters as such bias voltage and working pressure play a dominant role on the change of this ratio value. To determine the effect of working pressure and bias voltage on S/Mo ratio, MoS₂-Ti composite films were deposited on glass wafers by pulsed-dc magnetron sputtering (PMS). The deposition process was performed for nine different test conditions at various levels of target current, working pressure, and substrate voltage using the Taguchi L₉(3⁴) experimental method. It was observed that the chemical composition of MoS₂-Ti composite films was significantly affected by sputtering parameters. It was also observed that S/Mo ratio decreased as the bias voltage increased at a constant working pressure and S/Mo ratio increased with increasing working pressure at a constant bias voltage.     

Au-Cu nanoparticles in silica glass as composite material for photonic applications

In the framework of metal nanocluster composite glasses for photonic application, (gold + copper)-containing silica films were synthesized by radiofrequency co-sputtering deposition technique by varying the Au/Cu ratio. To obtain the formation of metallic (alloy) nanoclusters, the deposited samples were annealed in reducing atmosphere at 900 °C. The linear and nonlinear optical properties of the composite glasses were investigated. In particular, the nonlinear ultrafast optical response was measured by means of the Z-scan technique at a wavelength of 527 nm with single 6 ps pulse configuration. Significant refractive and absorptive effects were observed in all the annealed samples. The two main figures of merit related to the performance of materials for optical switching device application were evaluated for all samples, showing interesting values for the Cu-rich composites.     

Focused ion beam based sputtering yield measurements on ZnO and Mo thin films

In order to facilitate the lateral structuring of solar cell multilayer structures, the ion beam sputtering behaviour of Mo and ZnO thin films deposited onto soda-lime glass and single crystalline Si substrates was studied. Prior to ion beam processing the layers were analyzed by Energy Dispersive X-Ray Spectrometry (EDS), X-Ray Diffractometry (XRD) and Rutherford Backscattering (RBS). In order to characterize the ion beam sputtering of the investigated layers, 2×2 μm² fractions of the thin films were removed by a scanned 30 keV focused Ga⁺ ion beam (FIB) in a dual beam system. SEM images taken during the milling process allowed continuous monitoring of the process without breaking the vacuum. The depth of the groove after removal of the layers was measured by Atomic Force Microscopy (AFM) and was plotted as a function of the ion dose. The sputtering depth has a dependence on the ion dose that is close to linear. The deviation from linearity is produced by heating effects at high beam currents. Sputtering yield values calculated from the experiments and simulations showed good agreement in the case of Mo but deviation was found in the case of ZnO.