Carbon anode thin films for lithium batteries

This paper describes a simple method to create carbon anode films for potential applications to the research field of lithium batteries. Carbon films were prepared using DC magneton sputtering with post-annealing process in the range from room temperature (RT) to 700 °C. Half cells assembled with lithium foils as the counter electrode and 1 M LiPF₆ in EC:DMC (1:1 v/v) electrolytic solution was used to evaluate the discharging capacity of prepared anode thin films. We showed that carbon film deposited at RT can be more suitable for an anode material than that of higher temperature annealed films above 400 °C. A variety of analysis methods including X-ray diffraction spectrometry (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were utilized to evaluate the defect density of the films; for example, the more defects on the film were identified when the carbon film was treated at a low temperature such as RT. It is envisioned that DC magnetron-sputtering with optimized process conditions can be useful for fabricating carbon based film anodes.     

Sputtering of clusters from nickel-aluminium

A NiAl(1 1 1) single crystal was bombarded with 15 keV Ar⁺, and the resulting secondary neutrals were analysed by laser postionisation secondary neutral mass spectrometry. By measuring the individual cluster photoion intensity as a function of laser power, the sputter yields of 33 individual clusters were determined. The yield of Al_n clusters sputtered from NiAl falls with increasing cluster nuclearity as n^−8.7 while Ni_n and Al_m−nNi_n yields are proportional to n^−5.9 and n^−5.2, respectively. The distribution of thee yields of mixed Al_m−nNi_n clusters with n and m is found to diverge significantly from the expected distribution based on a random combinatorial approach, indicating that the energetics due to the chemical bonding in the clusters plays a significant role during cluster formation in the sputtering process.     

Preparation of non-contact ordered array of polystyrene colloidal particles by using a metallic thin film of fused hemispheres

A thin metallic bilayer consists of fused hollow hemispheres of 930 nm in diameter is fabricated by sputter deposition of Ti and Fe at 50 and 5 nm of thickness, respectively, onto an array of spherical polystyrene colloidal particles. The fused metal hemispheres are utilized to assemble polystyrene colloidal particles of smaller diameters (800 nm) into non-contact two-dimensional periodic array by trapping them in the metallic wells.     

Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering

Hydrogenated amorphous silicon nitride thin films are deposited by DC magnetron sputtering in argon, and molecular hydrogen and nitrogen mixture. The samples are characterized by electrical measurements and by optical transmission. The physicochemical structure is studied by FTIR spectrum analysis. The results show that both nitrogen and hydrogen are incorporated. The ratio [N]/[Si] increases with increasing hydrogen partial pressure. The deposited films are used in MIS structures. The capacitance–voltage characteristics are carried out. The deposited samples present a large gap and show a nearly chemical stoichiometric composition.     

Room-temperature growth of carbon nanofibers on plastic substrates

A very simple method to synthesize densely distributed carbon nanofibers (CNFs) on flexible plastic substrates at room temperature with no catalyst is demonstrated. Carbon film was deposited onto polyimide, poly-ethylene-terephthalate (PET) films, Si plates and a Ni mesh, which were then sputtered with obliquely incident Ar⁺ ions at 3 keV at room temperature. Linear-shaped CNFs oriented in the incidence direction of the ion beam grew on the sputtered substrates, as confirmed by scanning (SEM) and transmission electron microscopes (TEM). CNF growth on a PET substrate, which is a non-heat-tolerant plastic, has never been reported so far. CNFs thus grown were characterized as amorphous without a hollow structure. The diameter of CNFs was almost identical (20-30 nm) despite a large difference in CNF length (0.1-4 μm). In addition, the CNF-tipped cones were demonstrated to act successfully as a template to fabricate one dimensional (1-D) zinc oxide (ZnO) nanostructures on a PET substrate. Thus, it was believed that the ion-irradiation technique would open up a new approach to fabricate any kinds of 1-D nanomaterials on flexible substrates at room temperature.     

Theoretical Simulations of Irradiation-Induced Sputtering at Tungsten Surface

The irradiation-induced sputtering and the structural damage at tungsten surface are investigated by using molecular dynamics simulations at the level of quantum mechanics. Our simulations indicate that the sputtered atoms appear when the energy of incident primary knock-on atom (PKA) is more than 200 eV and the incident angle of the PKA is larger than 65°. Meanwhile, the irradiation-induced vacancies are less when the incident angle of PKA is in the range of 45°-65°. So, the optimum incident angles of PKA are suggested to reduce the irradiation-induced damage of the W surface. Furthermore, we find that the interstitials contained in the systems accelerate the sputtering whereas the intrinsic vacancies suppress the sputtering when the PKA is near the defects.     

Dry etching of ITO by magnetic pole enhanced inductively coupled plasma for display and biosensing devices

The dry etching of indium tin oxide (ITO) layers deposited on glass substrates was investigated in a high density inductively coupled plasma (ICP) source. This innovative low pressure plasma source uses a magnetic core in order to concentrate the electromagnetic energy on the plasma and thus provides for higher plasma density and better uniformity. Different gas mixtures were tested containing mainly hydrogen, argon and methane. In Ar/H₂ mixtures and at constant bias voltage (−100 V), the etch rate shows a linear dependence with input power varying the same way as the ion density, which confirms the hypothesis that the etching process is mainly physical. In CH₄/H₂ mixtures, the etch rate goes through a maximum for 10% CH₄ indicating a participation of the radicals to the etching process. However, the etch rate remains quite low with this type of gas mixture (around 10 nm/min) because the etching mechanism appears to be competing with a deposition process. With CH₄/Ar mixtures, a similar feature appeared but the etch rate was much higher, reaching 130 nm/min at 10% of CH₄ in Ar. The increase in etch rate with the addition of a small quantity of methane indicates that the physical etching process is enhanced by a chemical mechanism. The etching process was monitored by optical emission spectroscopy that appeared to be a valuable tool for endpoint detection.     

高温高密度等离子体和金属合金表面相互作用研究

本文介绍一台自行改装调试成功的9kJ高温高密度等离子体焦点装置(20kV,48μF)并利用它研究了金属铌、钼,Ni-Cr合金以及不锈钢等材料表面与等离子体的相互作用。借助于电子显微镜,俄歇电子能谱仪,X光衍射技术观测方法,获得了上述材料被焦点辐照瞬间的离子注入,单极电弧,溅射现象,Frenkel缺陷等重要物理过程的信息。对材料辐照损伤的机理作了初步讨论。     

Fabrication techniques for colymer/Si optical waveguide

In this paper fabrication techniques were investigated for polymer/Si optical waveguide. The aluminum film was used as photolithographic mask instead of photoresist to improve waveguide profile. The influence of aluminum metal cladding produced by sputtering process on the optical character of the device was discussed. The absorption loss was calculated and measured by using effective index method and cut-back method, respectively. Optimized etching parameters were given in reactive ion etching using oxygen, such as radio frequency power and gas flow rate. Measured near-field mode pattern indicated fabrication waveguide achieved single-mode transmission at wavelength 1.55 μm.     

The interactions of thiophene with polycrystalline UO2

We have studied the adsorption and desorption of thiophene on polycrystalline UO₂ as function of coverage, over the temperature range 100-640 K, using X-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD) and electron stimulated desorption (ESD). Thiophene is found to adsorb molecularly on stoichiometric UO₂. C 1s and S 2p XPS spectra are measured at different thiophene exposures and at different temperatures; they show no evidence for the presence of dissociation fragments, confirming that thiophene adsorbs and desorbs molecularly on a polycrystalline stoichiometric UO₂ surface. The variation of the S 2p and C 1s intensity as function of exposure, together with ESD measurements of O⁺ as function of exposure, can be connected to the growth mode of a thiophene film on UO₂; the thiophene film converts from a flat-lying configuration to an inclined structure as coverage increases. The effects of X-rays, UV, and electron irradiation on thiophene films have been studied in two different coverage regimes, monolayer and multilayer. Irradiation leads to a modification of thiophene films, and appreciable concentrations of species stable to 640 K are present on the surface for both regimes. The XPS results suggest that irradiation induces polymerization and oligomerization, as well as formation of thiolates and dissociation fragments of thiophene. The adsorption and reactivity of thiophene on defective UO₂ surfaces have also been studied. The O vacancies and defects in the oxide surface cause cleavage of C-H and C-S bonds leading to the dissociation of thiophene at temperatures as low as 100 K. These results illustrate the important role played by O vacancies in the chemistry of thiophene over an oxide surface.