Effect of bias in ferroelectric-antiferroelectric relaxation

The ferroelectric-antiferroelectric transition in greyscale generation of antiferroelectric liquid crystal displays (AFLC) is a heterogeneous process. The process has been described as the growth of finger-like domains [1]. We have previously studied the ferroelectric-antiferroelectric phase transition, relaxation that follows the data pulse in surface stabilized asymmetric antiferroelectric liquid crystal displays using biasless video frequency waveforms [2]. This relaxation involves an intensity decay of the light transmitted by a pixel and depends on several parameters such as surface stabilization, rotational viscosity of the AFLC, magnitude of the data pulse, and bias voltage. The usual multiplexed driving of AFLC displays leads to long-term stabilisation of the grey levels induced by the data pulses within the selection time. However, depending on the bias level, alternative greyscale mechanisms may be obtained by allowing the grey levels to decay during the frametime. These greyscales may be advantageous in some instances since they improve the dynamic response of the AFLC device and reduce the reset time of the waveform. In this study we extend the previous work to include the effect of bias. We present the measured data, in terms of growth pattern and speed and present an extension of the previously model on order to explain the results.     

纳米TiO_2薄膜电极光电催化降解染料RhB的研究

利用光电协同作用可增强TiO2光催化氧化的量子效率[1-3].外加偏压[4-6]是电助光催化过程的一个重要特性,通过对TiO2薄膜电极施加偏压可降低光生电子和空穴的复合速率,不仅可以加速有机污染物的降解,而且还能改变某些底物的降解途径[7].     

Matrix effects on the multi-collector inductively coupled plasma mass spectrometric analysis of high-precision cadmium and zinc isotope ratios

Resin-derived contaminants added to samples during column chemistry are shown to cause matrix effects that lead to inaccuracy in multi-collector inductively coupled plasma mass spectrometry measurement of small natural variations in Cd and Zn isotopic compositions. These matrix effects were evaluated by comparing pure Cd and Zn standards and standards doped with bulk column blank from the anion exchange chromatography procedure. Doped standards exhibit signal enhancements (Cd, Ag, Zn and Cu), instrumental mass bias changes and inaccurate isotopic compositions relative to undoped standards, all of which are attributed to the combined presence of resin-derived organics and inorganics. The matrix effect associated with the inorganic component of the column blanks was evaluated separately by doping standards with metals at the trace levels detected in the column blanks. Mass bias effects introduced by the inorganic column blank matrix are smaller than for the bulk column blank matrix but can still lead to significant changes in ion signal intensity, instrumental mass bias and isotopic ratios. Chemical treatment with refluxed HNO₃ or HClO₄/HNO₃ removes resin-derived organic components resulting in matrix effects similar in magnitude to those associated with the inorganic component of the column blank.Mass bias correction using combined external normalization-SSB does not correct for these matrix effects because the instrumental mass biases experienced by Cd and Zn are decoupled from those of Ag and Cu, respectively. Our results demonstrate that ion exchange chromatography and associated resin-derived contaminants can be a source of error in MC-ICP-MS measurement of heavy stable element isotopic compositions.     

Single potential electrophoresis microchip with reduced bias using pressure pulse injection

We propose two variants of a new injection technique for use in electrophoresis microchips, called "front gate pressure injection" and "back gate pressure injection", that both enable a controlled and reproducible sample introduction with reduced bias compared to electrokinetic gated injection. A continuous flow of a test solution of fluorescein/rhodamine B in 20 mM Tris/boric acid buffer (pH 8.6) sample test solution is electrokinetically driven near to the entrance of the separation channel, using a single voltage (3 kV) that is constant in time. A sample plug is injected in the separation channel by a pressure pulse of the order of 0.1 s. The latter is generated using the mechanical deflection of a PDMS membrane that is loosely placed on a dedicated chip reservoir. The analysis of the peak area ratio of the separated compounds demonstrates a nearly constant sample composition when using pressure-based injection. A small remaining injection bias for the shortest membrane deflection times can be attributed to a dilution effect of the charged compound due to the presence of an electrical field transverse to the sample flow boundary in the channel junction.     

铁磁/反铁磁双层膜系统中的交换偏置及矫顽场的温度特性

提出了一个讨论铁磁／反铁磁双层膜中的交换偏置及矫顽场温度特性的物理模型，该模型，假设铁磁层为具有单畴各向异性的单畴膜而反铁磁层由许多相互独立具有多晶各向异性的颗粒组成，其温度依赖性主要来源于系统态的热不稳定，包括反铁磁颗粒易轴取向的热涨落和相关磁学量的温度依赖性等。计算结果表明其交换偏置随温度的增加非线性地减少而其矫顽场在体阻截温度处达极大值，且其体阻截温度随反铁磁颗粒粒径的增加而增加。我们的计算结果和相关实验结果一致，通过本的讨论，我们建议通过铁磁膜耦合上大粒径硬反铁磁颗粒膜可获得高交换偏置、低矫顽场且近独立于温度的相关磁学器件。     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

The synthesis and exchange bias effect of monodisperse NiO nanocrystals

Monodisperse NiO nanocrystals with an average particle size of 3 ± 0.4 nm are successfully synthesized by the thermal decomposition of Ni-oleylamine complex in an organic solvent under a continuous O2 flux. The crystalline structure and the morphology of the product are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. Magnetization and alternating-current (ac) susceptibility measurements indicate that the structure of the particles can be considered as consisting of an antiferromagnetically ordered core and a spin-glass-like surface shell. In addition, both the exchange bias field and the vertical magnetization shift can be observed in this system at 10 K after field cooling. This observed exchange bias effect is explained in terms of the exchange interaction between the antiferromagnetic core and the spin-glass-like shell.     

群决策中考虑主观偏袒因素的评价信息综合

在群决策中,如何将多个决策者的评价信息综合成整体信息是要研究的重要问题.最简单的方法是基于每个决策者是专业并且客观的假设,给他们的评价赋予相同的权重.但是实际情况要复杂得多,正如孔子所说,真正好的,应该是善者好之,不善者恶之.笔者研究了决策者中存在偏袒因素时的评价综合方法,拓宽了一般权重的约束限制,提出了基于评价之间相关关系的权重设置方法.     

可变功能产品功能使用模型及基于模型的关联耦合性分析

开展可变功能产品的构件关联性与功能耦合性的研究对设计该类产品有着重要的实用价值. 针对现有研究未能考虑功能使用情况的不足, 提出了可变功能产品功能使用模型的概念, 通过对各可变功能附加使用情况信息, 构建了可用以描述同一产品不同使用情况的功能使用模型; 随后将功能使用模型与功能-构件关联矩阵相结合, 提出了一种考虑功能使用情况的构件关联性与功能耦合性的量化方法. 最后, 通过一可变功能料理机的案例, 阐述了该方法的可行性及实施过程, 并基于构件关联性和功能耦合性的求解结果, 得出了对设计面向使用的产品或对现有产品进行改进设计具有指导意义的结论.