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31.
G Padmaja A V Ravi Kumar V Vidyalal P Radhakrishnan V P N Nampoori C P G Vallabhan 《Pramana》1989,32(5):L693-L698
Laser induced plasma emission spectra from highT
c superconducting samples of YBa2Cu3O7 and GdBa2Cu3O7 obtained with 1.06μm radiation from a Q switched Nd:YAG laser beam has been analysed. The results clearly show the presence of diatomic oxides
in addition to ionized species of the constituent metals in the plasma thus produced. 相似文献
32.
Rachel L. McSwain Alison R. Markowitz Kenneth R. Shull 《Journal of Polymer Science.Polymer Physics》2004,42(20):3809-3821
To develop a greater understanding of interfacial interactions between a semicrystalline polymer and a glassy polymer, adhesion tests were performed on very thin layers of poly(ethylene oxide) (PEO) sandwiched between two layers of poly(tetramethyl bisphenol A polycarbonate) (TMPC). The tests were designed to provide intimate contact between the surfaces while they were heated above the melting point of the PEO and cooled back to room temperature. A contact mechanics approach, based on the Johnson, Kendall, and Roberts theory, was used to determine values of the energy release rate describing the energetic driving force for crack propagation within the interfacial region. The ability to measure crack propagation at large values of the energy release rate was limited by rupture of the silicone elastomer that was used to provide a sufficiently compliant matrix for the adhesion experiment. By cycling the tensile stress at relatively low loading levels, we were able to measure fatigue crack propagation at values of the energy release rate that did not result in failure of the elastomer. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 3809–3821, 2004 相似文献
33.
Sang‐Uk Kim Choonkeun Lee Saimani Sundar Wonbong Jang Seung‐Jin Yang Haksoo Han 《Journal of Polymer Science.Polymer Physics》2004,42(23):4303-4312
A series of polyimides were synthesized from 2,2‐Bis(3,4‐dicarboxyphenyl)hexafluoropropane, 2,2‐bis(3‐amino‐4‐hydroxyphenyl)‐hexafluoropropane, and 4,4′‐oxydianiline by chemical imidization. The effects of the diamine ratios on the properties of the films were evaluated through the study of their thermal, electrical, and morphological properties. All the polymers exhibited better solubility in most of the organic solvents and hence were easily processable. Polyimides with more 2,2‐bis(3‐amino‐4‐hydroxyphenyl)‐hexafluoropropane exhibited better solubility and a low refractive index, which is highly desired for microelectronic applications. The dielectric constant and birefringence were strongly dependent on the fluorine content. With an increase in the fluorine substitution, both the dielectric constant and birefringence decreased. All the polymers exhibited high thermal stability (>400 °C). The absence of crystalline melting in differential scanning calorimetry and broad wide‐angle X‐ray diffraction patterns revealed the amorphous nature of the polymers, which was due to the presence of bulky CF3 groups and hinged ether linkages of the diamine component. The residual stress values decreased with an increase in the 4,4′‐oxydianiline content, and the results were in agreement with the dielectric constant. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 4303–4312, 2004 相似文献
34.
Junchai Zhao Shichun Jiang Xiangling Ji Lijia An Bingzheng Jiang 《Journal of Polymer Science.Polymer Physics》2004,42(18):3496-3504
The surface morphologies of poly(styrene‐b‐4vinylpyridine) (PS‐b‐P4VP) diblock copolymer and homopolystyrene (hPS) binary blend thin films were investigated by atomic force microscopy as a function of total volume fraction of PS (?PS) in the mixture. It was found that when hPS was added into symmetric PS‐b‐P4VP diblock copolymers, the surface morphology of this diblock copolymer was changed to a certain degree. With ?PS increasing at first, hPS was solubilized into the corresponding domains of block copolymer and formed cylinders. Moreover, the more solubilized the hPS, the more cylinders exist. However, when the limit was reached, excessive hPS tended to separate from the domains independently instead of solubilizing into the corresponding domains any longer, that is, a macrophase separation occurred. A model describing transitions of these morphologies with an increase in ?PS is proposed. The effect of composition on the phase morphology of blend films when graphite is used as a substrate is also investigated. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 3496–3504, 2004 相似文献
35.
以铝酸镧(001)单晶为基片,采用两步法制备Tl2Ba2CaCu2Oy(Tl 2212)高 温超导薄膜.首先,利用脉冲激光沉积(PLD)工艺沉积Ba2CaCu2Ox非晶前驱体薄膜;然后,前驱体薄膜在高温(720—850℃)下密封钢容器里铊化结晶形成Tl 2212薄膜.XRD结果表明Tl2212 薄膜是沿c轴方向生长的,其相组成为Tl 2212,摇摆曲线(0012)的半高宽为0.72° ,SEM图像显示其表面光滑平整,其零电阻温度为106.2K.
关键词:
Tl 2212超导薄膜
脉冲激光沉积 相似文献
36.
使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .俄歇电子能谱证实薄膜组分符合化学配比 ;x射线衍射测量表明刚沉积的薄膜是近非晶的 ,高温退火后发生部分晶化 ;原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面 ,表明薄膜具有优良的热稳定性 ;椭偏测得在 6 0 0nm处薄膜折射率为 2 0 9;电容 电压测试得到的薄膜介电常数为 1 9.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2 薄膜的方法 相似文献
37.
用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明,薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好,薄膜的电阻温度系数(TCR)最高可达4.23%/K.从成膜机理出发,较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为,单一取向的VO2结构使薄膜晶粒具有较高的电导激活能,致密的薄膜结构减少了氧空位和晶界宽度,使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原
关键词:
VO2多晶薄膜
离子束增强沉积
热电阻温度系数 相似文献
38.
以Cu膜为例,用Monte-Carlo算法模拟了薄膜生长的随机过程,并提出了更加完善的模型.在合理选择原子间相互作用计算方法的基础上,考虑了原子的吸附、在生长表面的迁移及迁移所引起的近邻原子连带效应、从生长表面的脱附等过程.模拟计算了薄膜的早期成核情况以及表面粗糙度和相对密度.结果表明,随着衬底温度的升高或入射率的降低,沉积在衬底上的原子逐步由离散型分布向聚集状态过渡形成一些岛核,并且逐步由二维岛核向三维岛核过渡.在一定的原子入射率下,存在三个优化温度,成核率最高时的最大成核温度Tn、薄膜的表面粗糙度最低
关键词:
Monte-Carlo算法
计算机模拟
薄膜生长 相似文献
39.
利用动力学蒙特卡罗方法模拟了异质外延超薄膜生长中的成核过程.研究了薄膜与衬底的晶格失配对超薄膜生长中成核密度、平均核尺寸、标度关系及生长模式的影响.结果发现产生压(张)应变的晶格负(正)失配使生长过程更早(迟)从成核区进入过渡区,失配越大,这一效应越明显.在相同的沉积条件下,负失配导致超薄膜形成较低的成核密度与较大的平均核尺寸,而正失配则相反.成核密度满足标度关系Ns≈(F/D)χ,随着失配度从-0.04增加到0.02,标度系数χ从0.37逐渐减小到0.33,对应超薄膜生长过程从包含二聚体扩散模式转变到无
关键词:
薄膜生长
成核
晶格失配
蒙特卡罗模拟 相似文献
40.
研究了利用磁性薄膜构造Salisbury屏的可能性及其在微波频段的反射率频率特性.结果表明,利用铁磁性材料在铁磁共振频率附近磁化率具有χ″>χ′的特性,可以构造出对电磁波有良好吸收性能的磁性Salisbury屏.通过对铁磁材料高频磁谱物理机理的分析后指出,具有弛豫型共振磁谱的铁磁材料可以构造出薄膜型Salisbury屏,其厚度为微米甚至亚微米量级.反射率的频率特性与磁性材料的特征阻抗z-r有关,它取决于铁磁共振频率和静态磁化率.反射率的频率响应显示磁性薄膜Salisbury屏具有较宽的吸收带宽.
关键词:
磁性Salisbury屏
反射率
频带响应
磁性薄膜 相似文献