聚芳醚非共轭性电致发光材料与器件

由单体Ma[2,5-二(2-乙基-己氧基)-1,4-双-{2,2-[5-(对-氟代苯基)]-1,3,4-噁二唑基}苯]分别与三组分单体(双酚A、砜代双酚A或混合的双酚A)在N,N-二甲基乙酰胺／甲苯／碳酸钾的催化下于165℃进行亲核取代聚合反应得到淡黄色的固体,进一步纯化后得到含噁二唑杂环的聚芳醚型非共轭的新型有机电致发光材料PE1、PE2、PE3。引入双侧链取代基增强了该类材料的溶解性能,通过控制反应条件及调节聚合温度获得了高收率的聚合产物。分别测得其化学物理性能,制备了聚合物PE1、PE2、PE3的简单结构器件(ITO／polymer／Ca／Ag),首次获得了该类材料单层器件的蓝色有机电致发光,且该类材料具有较优良的热稳定性。     

金属/有机界面势垒对单层有机电致发光器件发光效率的影响

基于高场下电荷的注入过程及激子的解离和复合过程,建立了单层有机发光器件电致发光(EL)效率的理论模型。计算表明：(1)当金属／有机界面势垒高度大于0．3eV时,器件的EL效率很低,降低金属／有机界面势垒可以显著提高器件的EL效率;(2)在较低偏压下,注入过程对器件的电致发光效率起主要作用,但在高偏压下复合过程起支配作用。这一模型可以阐明注入和复合过程对有机发光器件EL效率的影响,对选择发光材料、优化器件结构和提高器件EL效率具有指导意义。     

新型p-/n-掺杂型交替共聚物的合成及其光电性能的研究

本文通过Heck偶联法制备一种新型p-/n-掺杂型电致发光材料--3-十二烷氧基噻吩-共-1,3,4-噁二唑交替聚合物(P3DDOTV-OXD), 用核磁共振（1H NMR）及凝胶色谱（GPC）对结构进行了分析表征。用紫外光谱（Uv-vis）、荧光光谱法及电化学分析法对其光电学性能进行了研究。结果表明：聚合物的重均分子量为：5287,在氯仿溶液中,聚合物的紫外最大吸收波长为314nm,在401nm处发射出明亮的蓝光;较其均聚物（516nm）蓝移了115nm。 循环伏安测定结果表明: P3DDOTV-OXD在正、负向区域分别出现了一对氧化还原峰对,电子亲和能（Ia）为：2.88eV,有利于电子从阴极的注入。3-十二烷氧基噻吩-共-噁二唑交替共聚物实现了集空穴、电子双向传输为一体的高性能的聚合物光电功能材料的性能要求。     

Surface treatment on polyethylenimine interlayer to improve inverted OLED performance

Polyethylenimine(PEI) interlayer rinsing with different solvents for inverted organic light emitting diodes(OLEDs)is systematically studied in this paper. In comparison with the pristine one, the maximum current efficiency(CE_(max)) and power efficiency(PE_(max)) are enhanced by 21% and 22% for the device rinsing by ethylene glycol monomethyl ether(EEA).Little effect is found on the work function of the PEI interlayer rinsed by deionized water(DI), ethanol(EtOH), and EEA.On the other hand, the surface morphologies of PEI through different solvent treatments are quite different. Our results indicates that the surface morphology is the key to improving the device performance for IOLED as the work function of PEI keeps stable.     

双量子阱结构OLED效率和电流的磁效应

通过结构为ITO/NPB(60 nm)/ Alq₃ ∶1 wt% rubrene(20 nm)/ Alq₃(3 nm)/ Alq₃ ∶1 wt% rubrene(20 nm)/ Alq₃(20 nm)/LiF/Al的双量子阱的黄色有机电致发光器件,研究了不同磁场强度下的发光效率和电流变化特性. 研究结果表明该器件的电流是随着磁场强度的增加而单调下降的,显示了器件的电阻是随着磁场强度的增加而增加的. 同时也得到了该结构有 关键词： 量子阱 磁场 OLED 磁效应     

顶发射白光OLED微型显示器的蓝光掺杂特性研究

白光OLED微型显示器在信息显示领域具有重要的应用。采用真空镀膜系统,依次蒸镀Ag/ITO复合薄膜作为阳极结构,共蒸制备Mg∶Ag复合膜作为半透明阴极结构,NPB作为空穴传输材料和黄光主体材料,rubrene作为黄光掺杂料,AND作为蓝光主体料,DSA-Ph作为蓝光掺杂料,Alq3作为电子传输材料,以结构和工艺简化的蓝、黄光互补色来实现白光,通过共蒸发形式制备了结构为Ag/ITO/NPB/NPB∶rubrene（1.5%）/ADN∶DSA-Ph（x%/x=2,5,8）/Alq3/Mg∶Ag的白光OLED微型显示器,利用由Photo Research PR655光谱仪、Keithley 2400程控电源组成的光谱测试系统对器件的光电性能进行表征,研究了蓝光掺杂比对白光OLED微型显器性能的影响。结果表明,随着蓝光掺杂比的增加,白光OLED微型显示器的亮度先增加后降低,蓝光、黄光峰位有所偏移,色坐标发生一定的漂移,蓝光色纯度增加,可通过调控发光材料掺杂比实现白光OLED微型显示器性能的可控制备。初步优化获得的蓝、黄混合白光OLED微型显示器的器件,当驱动电压为5.0 V时,器件亮度达到3 679 cd·m-2,CIE坐标为（0.263,0.355）。     

阳极/有机层界面LiF层在OLED中的空穴缓冲作用

使用真空热蒸发镀膜法,在OLED层状结构中引入不同厚度的LiF作阳极修饰层,制备了结构为ITO/LiF/TPD/Alq₃/Al的器件。LiF超薄层的引入较好地修饰了ITO表面,减少了阳极和有机层界面缺陷态的形成,增强了器件的稳定性。实验结果表明: LiF层有效地阻挡空穴注入,增强载流子注入平衡,提高了器件的亮度和效率,含有1 nm厚LiF空穴缓冲层器件的性能最好,效率较不含缓冲层器件提高了近1.5倍。     

Improved performances in top-emitting organic light-emitting diodes based on a semiconductor zinc oxide buffer layer

Electroluminescence performances are improved by inserting a semiconductor zinc oxide (ZnO) buffer layer into the emissive tris-(8-hydroxyquinoline)aluminum (Alq₃) layer and the semitransparent Al/Ag cathode in top-emitting organic light-emitting diodes (TEOLEDs) with structures of Si/SiO₂/Ag/Ag₂O/4,4′, 4″-tris(3- methylphenylphenylamino)triphenylamine/ 4,4′-bis[N-(1-naphthyl-1-)-N-phenyl- amino]-biphenyl/Alq₃/ZnO/Al/Ag. The thermal deposition of ZnO layer onto Alq₃ results in Alq₃ anion formation, which is beneficial to electron injection by generating some new energy levels in the forbidden band of Alq₃. In addition, a large hole-injection barrier of 2 eV at the interface of Alq₃/ZnO effectively blocks hole injection into Al/Ag cathode, leading to more carrier recombination in the emissive region.     

LiF对柔性有机电致发光器件性能的影响

利用真空蒸镀方法,在PET柔性衬底上制备了有机电致发光器件.分析了玻璃和柔性衬底器件的电压、电流和亮度特性,重点讨论LiF层对器件性能的影响、柔性衬底上器件的失效机理,以及器件性能随时间衰减现象.实验结果表明,相同条件下,LiF层的加入能降低器件的开启电压,从7 V降至5.5 V;柔性衬底与界面容易形成缺陷,影响器件的寿命.     

Photopatterning of Crosslinkable Hole‐Conducting Materials for Application in Organic Light‐Emitting Devices

Summary: Modern multilayer organic light‐emitting devices (OLED) are fabricated easily and at low cost by spin‐coating with subsequent crosslinking of the layers. For this purpose, a low‐molecular‐weight hole‐transport material based on triphenyl amines bearing crosslinkable oxetane groups was synthesized. Crosslinking of the spin‐coated layer was initiated with UV irradiation using an iodonium‐salt photoinitiator and was observed using realtime FT‐IR spectroscopy. Standard photolithography techniques can be used for structuring the material on the micrometre scale.

An AFM image of the photopatterned bis‐oxetane‐functionalized low‐molecular‐weight hole‐transport material based on triphenyl amines synthesized here.