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双量子阱结构OLED效率和电流的磁效应
引用本文:姜文龙,孟昭晖,丛林,汪津,王立忠,韩强,孟凡超,高永慧.双量子阱结构OLED效率和电流的磁效应[J].物理学报,2010,59(9):6642-6646.
作者姓名:姜文龙  孟昭晖  丛林  汪津  王立忠  韩强  孟凡超  高永慧
作者单位:吉林师范大学信息技术学院,四平 136000
基金项目:国家青年基金项目(批准号:10804036),吉林省科技发展计划项目(批准号:20080528,20082112),吉林省教育厅科研计划项目 (批准号:[2007]154,[2008]155),四平科技局计划项目(批准号:四科合字第2005007号,四科合字第2006008号)资助的课题.
摘    要:通过结构为ITO/NPB(60 nm)/ Alq3 ∶1 wt% rubrene(20 nm)/ Alq3(3 nm)/ Alq3 ∶1 wt% rubrene(20 nm)/ Alq3(20 nm)/LiF/Al的双量子阱的黄色有机电致发光器件,研究了不同磁场强度下的发光效率和电流变化特性. 研究结果表明该器件的电流是随着磁场强度的增加而单调下降的,显示了器件的电阻是随着磁场强度的增加而增加的. 同时也得到了该结构有 关键词: 量子阱 磁场 OLED 磁效应

关 键 词:量子阱  磁场  OLED  磁效应
收稿时间:2009-10-16
修稿时间:1/7/2010 12:00:00 AM

The role of magnetic fields on the efficiency of OLED of double quantum well structures
Jiang Wen-Long,Meng Zhao-Hui,Cong Lin,Wang Jin,Wang Li-Zhong,Han Qiang,Meng Fan-Chao,Gao Yong-Hui.The role of magnetic fields on the efficiency of OLED of double quantum well structures[J].Acta Physica Sinica,2010,59(9):6642-6646.
Authors:Jiang Wen-Long  Meng Zhao-Hui  Cong Lin  Wang Jin  Wang Li-Zhong  Han Qiang  Meng Fan-Chao  Gao Yong-Hui
Institution:College of Information and Technology, Jilin Normal University, Siping 136000, China;College of Information and Technology, Jilin Normal University, Siping 136000, China;College of Information and Technology, Jilin Normal University, Siping 136000, China;College of Information and Technology, Jilin Normal University, Siping 136000, China;College of Information and Technology, Jilin Normal University, Siping 136000, China;College of Information and Technology, Jilin Normal University, Siping 136000, China;College of Information and Technology, Jilin Normal University, Siping 136000, China;College of Information and Technology, Jilin Normal University, Siping 136000, China
Abstract:The organic light emitting diodes with the structure of ITO/NPB(60 nm)/ Alq3 ∶Rubrene(1wt%,20 nm)/Alq3(3 nm)/Alq3:Rubrene(1wt%,20 nm)/ Alq3(20 nm)/LiF/Al, which have multiple quantum well structures (MQW), were fabricated and the magnetic field effects on the efficiency and current of the OLEDs were measured. The experiment showed that the current decreased monotoniocally, i.e. the resistance of the device increased under the magnetic field. At the same time, the magnetic field effect on efficiency was achieved. The changing ratio of efficiency increased 9.13% maximally when the magnetic field was below 20 mT. The changing ratio of efficiency decreased with the magnetic field increasing when the magnetic field was higher than 20 mT.
Keywords:quantum well  magnetic field  OLED  magnetic field effects
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