有机多层量子阱的能量转移

采用多源有机分子气相沉积系统制备了不同类型的有机多量子阱结构，利用电化学循环伏安法和吸收光谱、荧光光谱研究了量子阱的类型、光致发光的特性.电化学循环伏安法和吸收光谱的测量结果表明，PBD/8-羟基喹啉铝(Alq₃)有机量子阱为Ⅰ型量子阱结构，NPB/Alq₃和BCP/Alq₃有机量子阱为Ⅱ型量子阱结构.荧光光谱的研究结果表明，PBD/Alq₃和BCP/Alq₃量子阱结构可以实现PBD，BCP向Alq₃能量完全转移，而NPB/Alq₃量子阱结构，NPB和Alq₃之间只是部分能量转移.文中对影响能量转移的因素进行了讨论. 关键词： 有机量子阱 能量转移     

有机量子阱的光学性质

采用多源有机分子气相沉积系统(OMBD)制备了Alq₃，PBD/Alq₃，PBD/Alq₃/PBD单层、双层以及量子阱结构，利用电化学循环伏安法和吸收光谱、荧光光谱研究了量子阱的类型和样品的光致发光特性.电化学循环伏安法和吸收光谱的测量结果表明，PBD/Alq₃有机量子阱为Ⅰ型量子阱结构.荧光光谱的研究结果表明，单层Alq₃的光致发光峰不随Alq₃厚度变化而变化；但是双层PBD/Alq₃结构光致发光峰随Alq₃厚度的减小而发生蓝移；同样对于PBD/Alq₃/PBD量子阱结构光致发光峰随Alq₃厚度的减小而发生蓝移.对引起光谱蓝移的原因进行了讨论. 关键词： 有机量子阱 光谱蓝移     

PVK空穴传输层对有机电致发光器件性能的影响

以聚乙烯基咔唑poly(N-vinylcarbazole)(PVK)旋涂层为空穴传输层,着重研究了PVK层厚度对双层器件氧化铟锡(ITO)/PVK/tris-(8-hydroxyquinoline)aluminum(Alq₃)/Mg:Ag/Al器件性能的影响。测试结果表明,当Alq₃层厚度一定时(50nm),只有PVK层为适当厚度(18nm)时双层器件才有最优良的器件性能,即最低的起亮电压,最高的发光亮度和效率。同时对比了不同PVK层厚度的PVK/Alq₃双层器件之间以及PVK/Alq₃与N,N′-bis-(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine(NPB)/Alq₃双层器件寿命的差异。测试结果表明,尽管越厚的PVK层对应的PVK/Alq₃双层器件发光性能并不是越好,但器件寿命越长。原因是器件Alq₃层内形成的Alq³⁺越少,因此器件稳定性越好;而PVK/Alq₃与NPB/Alq₃双层器件寿命的差异来自不同空穴传输层的制备工艺和能级结构的不同。     

LiF超薄层引起的OLEDs发光光谱展宽

将LiF插入到发光层Alq₃中,制备了有机电致发光器件(OLED),其器件的结构为:ITO/NPB (45 nm)/Alq₃ (x nm)/LiF (0.3 nm)/Alq₃ /Al(150 nm)。发现器件的电致发光谱(Electroluminescence spectra, EL)有非常明显的展宽现象,这为白光器件的制备提供了一条简单的途径。通过对比LiF在Alq₃中不同厚度处的发光谱,发现在x=10时谱线展宽最显著,器件最大亮度在22 V时达到8 260 cd/m²,最大效率可达 4.83 cd/A,并对其光谱展宽的机理及器件特性进行了分析。     

一种新型结构的黄光有机电致发光器件

用有机荧光染料罗丹明B(Rhodamine B)作为掺杂剂, 采用双量子阱结构制备了一种新型的黄光有机电致发光器件,器件结构及各层厚度为：ITO/CuPc(6 nm)/NPB(20 nm)/Alq₃(3 nm)/Alq₃：Rhodamine B(3 nm)/Alq₃(3 nm)/Alq₃：Rhodamine B(3 nm)/Alq₃(30 nm)/Liq(5 nm)/Al(30 nm)。研究发现Rhodamine B的掺杂浓度对该器件的发光亮度和发光效率有较大影响。当Rhodamine B的掺杂浓度为1.5 wt％时, 得到了最大电流效率1.526 cd·A-1,最大发光亮度1 309 cd·m-2的黄光有机电致发光器件。由器件的电致光谱曲线,可以看到在发光层之间存在着Alq₃向RhB传递能量的过程。由于量子阱的斯托克斯效应与RhB染料分子间的自极化作用,随着掺杂浓度的增加,λ_max出现明显红移。     

TBPe作蓝光材料的双层白色有机电致发光器件的性能

选用一种新型高效的蓝光有机小分子荧光染料TBPe,首次制备了以PVK:TBPe为蓝光发光层和Alq₃:rubrene为橙红光发光层的双层白光有机电致发光器件,器件结构为ITO/PVK:TBPe/Alq₃:rubrene/Mg:Ag。通过适当调节各有机层的掺杂比例和厚度,得到了发光性能比较理想的白光器件。器件在7V左右启亮,而且随着外加电压的变化,色坐标基本保持不变,在外加驱动电压为16V时,器件的亮度为738cd/m²,外量子效率为0.2%。我们还尝试选用本身可以发绿白光,而且兼具电子传输特性的母体材料Zn(BTZ)₂替代Alq₃,器件的最大亮度提高到1300cd/m²,色坐标为(0.32,0.36),更加接近白色等能点,器件其他光电性能也得到了显著地提高。     

ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件

采用水相法合成核壳结构ZnSe/ZnS 纳米晶,经X射线衍射(XRD)分析和透射电子显微镜(TEM)表征,证实所制备的样品为立方晶型闪锌矿结构ZnSe/ZnS量子点。按照一定的质量比将ZnSe/ZnS 纳米晶和有机聚合物MEH-PPV(poly ) 共掺并将其作为发光层,分别制备单层和多层有机电致发光器件,结构为ITO/MEH-PPV∶ZnSe(ZnS)(50 nm)/Al和 ITO/PEDOT∶PSS(70 nm)/ MEH-PPV∶ZnSe(ZnS)(50 nm)/BCP(15 nm)/Alq₃(12 nm) /LiF(0.5 nm)/Al。实验结果表明,多层发光器件的发光特性与单层器件不同,工作电压的增大使其发光峰发生了明显的蓝移。     

基于一种新型有机金属配合物的量子阱结构有机电致白光器件的性能研究

利用一种新型有机金属配合物二(2-(4-三氟甲基-2-羟基苯基)苯并噻唑锌(Zn(4-TfmBTZ)₂),基于NPB/Zn(4-TfmBTZ)₂界面电致激基复合物,制备了一系列异质结量子阱结构有机电致白光器件.结果表明,量子阱结构可以有效提高界面电致激基复合物的发光效率以及器件的显色指数和色度稳定性.得出器件ITO/NPB (60 nm)/Zn(4-TfmBTZ)₂(3.0 nm)/NPB (4.0 nm)/Zn(4-TfmBTZ)_{关键词： 二(2-(4-三氟甲基-2-羟基苯基)苯并噻唑锌 电致激基复合物 量子阱 白光}     

NPB厚度对异质结OLED载流子复合区域的调控

通过调控p型半导体N,N′-bis(naphthalen-1-y)-N,N′-bis(phenyl)benzidine(NPB)层的厚度,制备了结构为ITO/NPB/aluminum(Ⅲ)bis(2-methyl-8-quinolinato)-4-phenylphenolate(BAlq)/NPB(0~18nm)/tri-(8-hydroxyquinoline)-aluminum(Alq₃)/Mg:Ag的多层有机电致发光器件.分析结果表明,在该类异质结器件中,NPB不仅可以作为空穴传输材料,在适当的厚度范围内,它还可以起到调控载流子复合区域的作用;当NPB厚度在0~18nm之间变化时,随着其厚度增加器件发光颜色可由蓝色变为绿色.通过器件发光光谱的表征可以得知,器件的载流子复合区域相应地由BAlq层转移至Alq₃层.     

有机电致发光器件的动态电学特性

利用交流阻抗谱技术，研究了有机发光二极管ITO/Alq₃(90 nm)/Al的载流子传导机理.根据器件对不同频率的响应曲线及其等效电路模型，该器件可看作是由并联的电阻R_p和电容C_p再与电阻R_s串联而成，并根据实验数据求出了R_p，C_p和R_s的数值.实验结果表明器件的载流子传输机理属于指数分布式的陷阱电荷限制电流，其介电弛豫时间随偏压的增加而逐渐减小. 关键词： 3')" href="#">Alq₃ 陷阱电荷限制电流 交流阻抗谱 有机发光二极管     

室温下磁场对基于Alq3的有机电致发光器件的影响

制备了ITO/NPB/LiF/Alq₃/LiF/Al的器件,测量了该组器件效率和亮度的磁效应.结果表明,在50 mT磁场中,当LiF缓冲层厚度为0.8 nm时,器件的效率最大增加了12.4%,磁致亮度最大变化率17%.同时,制备的磷光器件ITO/NPB/LiF/CBP:6 wt% Ir(ppy)₃/BCP/Alq₃/ LiF/Al,在50mT磁场作用下,当LiF缓冲层的厚度为0.8 nm时,器件的效率最大增加12.1%.在Alq_{3 关键词： 有机发光 磁场 效率 磁致亮度}     

磁场对基于Co铁磁薄膜的有机发光器件效率和电流的影响

制备结构为ITO/Co/NPB/Alq₃/LiF/Al的有机发光器件,测量了室温下磁场对器件发光效率和电流的影响.发现磁场强度小于80 mT时,器件发光效率随磁场强度的增加而增大,最大为18.8%,随磁场强度的继续增加发光效率的增强趋于饱和.效率的增加是Co的自旋极化的注入和磁场效应共同作用的结果,其中自旋极化注入起主要作用.在磁场强度小于60 mT时电流随磁场增强而增加,最大为6.9%,随磁场强度的进一步增加电流的增加有所减弱.产生这种现象的原因可归结为磁场相关的单线态极化子对的解 关键词： 有机电致发光 自旋极化 磁场效应     

Efficient and stable single-dopant white OLEDs based on 9,10-bis (2-naphthyl) anthracene

Efficient white organic light-emitting diodes (WOLEDs) are fabricated with a thin layer of 9,10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene as the source of white emission. A device with the structure of ITO/NPB (70 nm)/ADN: 0.5% Rubrene (30 nm)/Alq₃ (50 nm)/MgAg shows a maximum current efficiency of 3.7 cd/A, with the CIE coordinates of x=0.33, y=0.43. The EL spectrum of the devices and the CIE coordinates remains almost the same when the voltage is increased from 10 to 15 V and the current efficiency remains quite stable with the current density increased from 20 to 250 mA/cm².     

LiF插层对有机发光二极管磁场效应的调控

制备了有LiF插层的有机发光二极管,以八羟基喹啉铝（Alq₃）作为电子传输层,N, N′-二苯基-N, N′-二(1-萘基)-1,1′-联苯-4,4′-二胺（NPB）作为空穴传输层.通过改变Alq₃与NPB间LiF插层的厚度,研究了不同温度下器件的光电特性及电致发光的磁场效应.测量结果表明:LiF插层可以影响器件内部载流子的输运和激发态的形成.较厚的插层阻碍了空穴的传输,使器件的电流效率变低.但实验中发现, 关键词： LiF插层结构 磁场效应 三重态激子     

New double graded structure for enhanced performance in white organic light emitting diode

This study presents a new design that uses a combination of a graded hole transport layer (GH) structure and a gradually doped emissive layer (GE) structure as a double graded (DG) structure to improve the electrical and optical performance of white organic light-emitting diodes (WOLEDs). The proposed structure is ITO/m-MTDATA (15 nm)/NPB (15 nm)/NPB: 25% BAlq (15 nm)/NPB: 50% BAlq (15 nm)/BAlq: 0.5% Rubrene (10 nm)/BAlq: 1% Rubrene (10 nm)/BAlq: 1.5% Rubrene (10 nm)/Alq₃ (20 nm)/LiF (0.5 nm)/Al (200 nm). (m-MTDATA: 4,4′,4″ -tris(3-methylphenylphenylamino)triphenylamine; NPB: N,N′-diphenyl-N,N′-bis(1-naphthyl-phenyl)-(1,1′-biphenyl)-4,4′-diamine; BAlq: aluminum (III) bis(2-methyl-8-quinolinato) 4-phenylphenolate; Rubrene: 5,6,11,12-tetraphenylnaphthacene; Alq₃: tris-(8-hydroxyquinoline) aluminum). By using this structure, the best performance of the WOLED is obtained at a luminous efficiency at 11.8 cd/A and the turn-on voltage of 100 cd/m² at 4.6 V. The DG structure can eliminate the discrete interface, and degrade surplus holes, the electron-hole pairs are efficiently injected and balanced recombination in the emissive layer, thus the spectra are unchanged under various drive currents and quenching effects can be significantly suppressed. Those advantages can enhance efficiency and are immune to drive current density variations.     

Observation of large magnetic resistance in weak magnetic fields using CuPt/SiO2/Si/SiO2/CuPt structure

The magnetoresistive effect of CuPt(8 nm)/SiO₂(5 nm)/Si(50,000 nm)/SiO₂(5 nm)/CuPt(8 nm) structure made by e-beam evaporation technique is studied in this work. Variation in magnetoresistance obtained by I-V measurements at 77 K and in the presence of less than 5 mT magnetic field applied in parallel to the surface is investigated. We have found that this structure exhibit large magnetoresistance in low magnetic fields (i.e. <5 mT). Our results also indicate that the variation in magnetoresistance in the presence of external magnetic field has oscillatory behavior and has the maximum value of 3295%. This structure due to its high sensitivity to low magnetic fields can also be used as an active element in magnetic field sensor devices.     

Red and Near-Infrared Electroluminescences from Metal-Free Phthalocyanine

Organic light emitting diodes are fabricated based on metal-free phthalocyanine (H₂Pc) doped into tris-(8-hydroxyquinoline) aluminium (Alq₃). The device structure is ITO/NPB (30nm)/Alq₃: H₂Pc(30nm)/BCP(20nm)/Alq₃(20 nm)/Al. In the light-emitting layers, H₂Pc concentrations are varied from 0wt% to 100wt%. The emissions around 708nm and 800nm appear at low concentrations, while the emissions around 910nm and 930nm appear at high concentrations. The emissions around 708nm and 800nm are from H₂Pc monomers. The emissions around 910nm and 930nm are from H₂Pc aggregates. The dominant mechanism in the doped devices is direct chargetrapping.     

Emission properties of dopants rubrene and coumarin 6 in Alq3 films

We have investigated the emission properties of dopants 5,6,11,12-tetraphenylnapthacene (rubrene) and 3-(2′-benzothiazolyl)-7-diethylaminocoumarin (coumarin 6) as well as co-doping of these two dopants in tris (8-hydroxyquinolinato) aluminum (Alq₃) films in double-layer organic light emitting diodes (OLEDs). We varied the rubrene (Rb) doping concentration in Alq₃:Rb films up to 10 wt%. The maximum luminescence efficiency of ∼6.5 cd/A was observed for Rb doping concentration of ∼0.7 wt% in Alq₃:Rb film, which was nearly double efficiency compared to pure Alq₃ device. The co-doping of dopants of C-6 and Rb in the ratio of 1:1 and 1:2 in Alq₃ films reduced the bias voltage compared to pure Alq₃ and Alq₃:C-6 devices for the same current density. The maximum luminescence efficiency was improved to ∼7 cd/A in Alq₃:{C-6:Rb(1:2)} film OLED. The direct recombination of holes and electrons in the dopant molecules may be responsible for the improvement of the luminescence efficiency. We also observed the shifting of photoluminescence (PL) and electroluminescence (EL) peaks position from ∼515 to ∼562 nm by co-doping of Rb and C-6 in Alq₃.     

Enhanced performance of light-emitting diodes based on a nanocomposite of dehydrated nanotube titanic acid and poly(vinylcarbazole) (PVK)

Performance of light-emitting diodes (LEDs) based on a nanocomposite of dehydrated nanotube titanic acid (DNTA) and poly(vinylcarbazole) (PVK) as emissive layer, i.e., ITO/PVK:DNTA(2 wt%)(100 nm)/BCP(30 nm)/Alq₃(10 nm)/LiF(1 nm)/Al [device D₂], was reported. By investigation of the luminance and electric characteristics of the device, we found that the performance of device D₂ was greatly improved. The recombination zone changed evidently due to the improvement of holes mobility. Compared with those devices without incorporating DNTA, both the maximum luminance and the electroluminescent efficiency of the device D₂ can be improved by a factor of three. Furthermore, the turn-on voltage of the device decreased dramatically.     

Pure red emission of dye-doped organic molecules from microcavity organic light emitting diode

Organic red emitting diode was fabricated by using 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[ij]quinolizin-8-yl)vinyl]-4H-pyran (DCM)-doped tri-(8-quinolitolato) aluminum (Alq₃) as emitter with the structure of G/ITO/NPB(25 nm)/DCM:Alq₃(55 nm)/Alq₃(20 nm)/LiF (1.2 nm)/Al(84 nm), (glass/indium–tin-oxide/4,4-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl, G/ITO/NPB), the wavelength of the maximal emission of which is 615 nm. By introducing cavity to Organic light emitting diode (OLED), we got pure red emitting diode with wavelength of the maximal emission of 621 nm and full-width at half-maximum (FWHM) of 27 nm. As far as we know, it is the best result in the dye-doped organic red emitting diode. We also made a device of G/ITO/NPB(25 nm)/DCM:Alq₃(29 nm)/DCM:PBD(26 nm)/Alq₃(20 nm)/LiF(1.2 nm)/Al(84 nm), in order to compare the performance of Alq₃ with that of 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD) as host material. It was found that the performance of device A is better than that of C both in brightness and color purity,as well as in EL efficiency.