Multiple Scattering Effects of Ag Particles in Random Ag-SiN Film

A layer of 40nm-thick Ag-SiN film with Ag nano-particles embedded and distributed randomly in the SiN thin film were deposited by the method of radiant-frequency magnetron sputtering. Specimens orderly comprising a random Ag-SiN film and an optical phase change recording layer were exposed to a focused laser beam with wavelength of 69Ohm. It is shown that, with a random Ag-SiN layer deposited above the recording layer. Calculation by the finite difference time domain method of a 4Ohm-thick SiN film under a Gaussian beam irradiation has been carried out to simulate the near-field distribution in the film, which showed a huge local near-field intensity enhancement of about 200 times if small Ag particles with diameter of 6 nm were modelled inthe SiN film in the central region of the in cident laser spot.     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

纳米硅量子线的发现与研究

一维纳米材料是当今介观物理学研究的前沿领域．文章报道了一种利用脉冲激光成功地制备纯度高、直径分布均匀的纳米硅量子线（ＳｉＮＷｓ）的方法，介绍了纳米量子线的形貌、显微结构、生长机理和物理性能研究的最新结果．纳米硅量子线的发现具有重要的科学意义和潜在的应用前景．     

Ni-Si多层膜中固态非晶化反应的热力学与动力学过程

研究了Ni/非晶Si(a-Si)多层组分调制膜(ML)中界面上的固相反应。根据计算的亚稳自由能图,对界面上固相反应形成非晶态进行了热力学与动力学的分析。提出了Ni/a-Si多层膜中的固相反应的动力学模型。 关键词：     

甲醇燃料车尾气净化催化剂的研究Ⅱ.甲醇深度氧化用银催化剂上吸附物种的原位红外研究

利用原位红外技术研究了ＣＨ３ＯＨ，ＣＯ，Ｏ２等在５％Ａｇ／γＡｌ２Ｏ３上的吸附情况及ＣＨ３ＯＨ和Ｏ２共吸附时表面物种的变化．结果表明，在表面纯净的Ａｇ／γＡｌ２Ｏ３催化剂上，甲醇的解离吸附仅发生在γＡｌ２Ｏ３上；表面预吸附氧后，可大大增强Ａｇ对ＣＨ３ＯＨ的解离吸附，当吸附的［ＣＨ３Ｏ］与［Ｏ］在Ａｇ／γＡｌ２Ｏ３上相互作用时，出现吸附态甲醛、甲二氧基、甲酸根等中间物种．Ｏ２在Ａｇ／γＡｌ２Ｏ３上存在非解离吸附（Ｏ－２），在真空中较易脱附，但在氧气氛下可于１００℃时稳定存在．     

Sansalvamide A固相合成新方法

报道了Pd催化丁基二乙基硅烷树脂与N-Boc-4-溴代苯丙氨酸甲酯直接反应形成Si—Ar键一步构建出硅基连接分子的新方法, 并采用Boc策略增长肽链, 以PyBOP (benzotriazole-1-yl-oxy-tris-pyrrolidino-phosphonium hexafluoro- phosphate)为环合剂固相合成了sansalvamide A.     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

三缺位杂多阴离子PW_9(O_(34))~(9-) 的二苯基硅衍生物的合成和表征

以Na8 H[PW9O3 4 ]·nH2 O与Ph2 SiCl2 为原料于乙腈中合成了三缺位杂多阴离子的二苯基硅衍生物(TBA)3[α-A -PW9O3 4 (Ph2 Si)3 ](TBA为四丁基铵盐的缩写)(记为I),并由元素分析、红外光谱、紫外光谱对化合物进行了表征,结果表明,二苯基硅通过六个Si-O -W桥键填充到三缺位杂多阴离子的骨架上,形成了开环的饱和笼形结构.热分析结果表明,该化合物的热分解温度在 4 95.2℃左右     

阴极还原处理对多孔硅发光性能的影响

对经过阴极还原处理后的多孔硅样片进行了光致发光测试和稳定性测试.实验结果表明这种处理能明显改善多孔硅的发光稳定性,使其表面结构更加稳定.利用原子力显微镜对不同还原时间的多孔硅微结构及形貌进行了比较,在一定范围内随着还原时间的增长多孔硅表面粗糙度增大,PL谱增强.     

Ag纳米颗粒的光吸收和透射电镜研究

用硼氢化钠作还原剂,制备出两种相对稳定的含银纳米颗粒的水溶胶,用透射电镜（TEM）和光学吸收谱对这些颗粒进行了表征.当被还原的银离子较少时,所形成的银纳米颗粒较小,吸收峰呈现二极等离子体共振吸收峰.当被还原的银离子较多时,银纳米颗粒尺寸变大,并出现二极和四极共振吸收峰.在Ag纳米颗粒形成后,对其溶液稀释,发现其峰形保持不变,而峰位会出现红移,最大红移量可达到10 nm.透射电镜研究表明,低浓度溶胶中的Ag纳米颗粒尺寸较为均匀,平均直径12 nm.高浓度溶胶中的纳米颗粒尺寸呈双尺寸分布特点,少量颗粒直径小于14 nm,大部分颗粒直径大于20 nm.