| 阴极还原处理对多孔硅发光性能的影响 |
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| 引用本文： | 王水凤,戴丽丽,元美玲.阴极还原处理对多孔硅发光性能的影响[J].南昌大学学报(理科版),2007,31(2):174-176,185. |
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| 作者姓名： | 王水凤 戴丽丽 元美玲 |
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| 作者单位： | 1. 南昌大学,物理学系,江西,南昌,330031
2. 南昌大学,材料科学系,江西,南昌,330031 |
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| 摘 要： | 对经过阴极还原处理后的多孔硅样片进行了光致发光测试和稳定性测试.实验结果表明这种处理能明显改善多孔硅的发光稳定性,使其表面结构更加稳定.利用原子力显微镜对不同还原时间的多孔硅微结构及形貌进行了比较,在一定范围内随着还原时间的增长多孔硅表面粗糙度增大,PL谱增强.
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| 关 键 词： | 多孔硅 阴极还原 发光稳定性 阴极 还原处理 多孔硅微结构 发光性能 影响 Porous Silicon Luminescence Properties Reduction Cathode 增强 表面粗糙度 增长 范围 比较 还原时间 显微镜 原子力 利用 光稳定性 表面结构 |
| 文章编号： | 1006-0464（2007）02-0174-03 |
| 修稿时间： | 2006-12-19 |
Influences of Cathode Reduction on Luminescence Properties of Porous Silicon |
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| WANG Shui-feng,DAI Li-li,YUAN Mei-ling.Influences of Cathode Reduction on Luminescence Properties of Porous Silicon[J].Journal of Nanchang University(Natural Science),2007,31(2):174-176,185. |
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| Authors: | WANG Shui-feng DAI Li-li YUAN Mei-ling |
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| Institution: | a. Department of Physics ; b. Department of Materials Science, Nanchang University, Nanchang 330031, China |
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| Abstract: | Photoluminescence(PL) of the porous silicon(PS) has been treated by cathode reduction process and stability observe.Experimental results indicate that the process of cathode reduction can obviously improve luminous stability of PS and photoluminescence intensity,so as to obtain more stable exterior structure.Meanwhile,we used Atomic Force Microscopy(AFM) to compare the microstructure and appearance of PS that have been treated by cathode reduction in different time.We drew the conclusion that the surface roughness and PL spectrum of PS would both increase along with the treatment time increase in a certain range. |
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| Keywords: | porous silicon cathode reduction process photoluminescence stability |
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