Study on the pre-chopper in CSNS LEBT

Physical designing of the pre-chopper in CSNS LEBT is carried out, which includes the deflecting voltage, the length and the width of the deflecting plates, and the gap between the deflecting plates. The most outstanding feature of the design is that both the gap and the width vary with the beam envelope size. So both the requried deflecting voltage and the loaded capacitance are lowered. In order to avoid destruction of the space charge neutralization by the pre-chopper in the whole LEBT, an electron-trapping electrode is arranged to confine the electrostatic field of the pre-chopper to the local area. To examine the reliability of the pre-chopping design in CSNS LEBT, a similar pre-chopping design in ADS RFQ LEBT is set up and an experiment on the pre-chopper is prepared. 3-dimensional simulations are carried out to determine the loaded capacitance and the applied voltage of the electron-trapping electrode.     

Nonlinear Flow Numerical Simulation of an Ultra-Low Permeability Reservoir

A nonlinear flow mathematical model is established and the grid equation is deduced. A nonlinear flow reservoir numerical simulation program is compiled. The permeability loss coefficient is used to describe the permeability loss. A pilot calculation is made on the basis of actual field data, which reflects the reservoir development characteristics. The numerical simulation program based on nonlinear flow can anticipate the dynamic characteristics of the ultra-low permeability reservoir exploitation more exactly.     

New Expressions for Dark-Hollow Light Beams

A class of new light beams of dark-hollow beams, named sinusoidal dark-hollow beams, is introduced. The propagation formula for a sinusoidal dark-hollow beam through a paraxial ABCD optical system is derived. The propagation properties of the sinusoidal dark-hollow beam are comparatively studied and illustrated with numerical examples.     

On the Generalized Continuity Equation

A generalized continuity equation extending the ordinary continuity equation is found using quanternions to show it is compatible with Dirac, Schrǒdinger, Klein-Gordon and diffusion equations. This generalized equation is Lorentz invariant. The transport properties of electrons are found to be governed by the Schr6dinger-like equation and not by the diffusion equation.     

Magnetic Properties and Magnetoresistance of CdMnS：Au Based Structures Prepared by Co-evaporation

Polycrystalline CdMnS and CdMnS：Au films with hexagonal structure on Si（111） substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS：Au samples with an average crystallite size of 90nm and Mn concentration of 5.0at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS：Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77K.     

Characteristics of Flow around an Impulsively Rotating Square Cylinder via LB-DF/FD Method

Flow around an impulsively rotating square cylinder in a viscous fluid in range of 1 ≤ Re ≤ 300 is numerically investigated by the previously developed LB-DF/FD method, which combines the lattilce Boltzmann method （LBM） and direct-forcing fictitious domain （DF/FD） scheme. Results show that in total three kinds of transient characteristics depending on Re are observed： 1 ≤ Re ≤ 20, four vortices arising from the corners of the square cylinder separate from the surfaces and gradually become stable without vortex integration or shedding; 20 ≤ Re 〈 100, vortices integration is observed when they grow long enough, then separated from each other; Re ≥ 100, vortex shedding takes place in this regime. The shedding vortex joins the downstream vortex to form a new one. It is also found that vortex shedding happens more than one time when Re ≥ 160. Furthermore, each vortex shedding induces a fluctuation in the torque exerted on the cylinder.     

Correlated Photon Pair Generation in Silicon Wire Waveguides at 1.5 μm

Correlated photon pairs at 1.5 μm are generated in a silicon wire waveguide （SWW） with a length of only 1.6 mm. Experimental results show that the single-side count rates on both sides increase quadratically with pump light, indicating that photons are generated from the spontaneous four-wave mixing （SFWM） processes. The quantum correlation property of the generated photons is demonstrated by the ratio between coincident and accidental coincident count rates. The highest ratio measured at room temperature is to be about 19, showing that generated photon pairs have strong quantum correlation property and low noise. What is more, the wavelength correlation property of the coincident count is also measured to demonstrate the correlated photon pair generation. The experimental results demonstrate that SWWs have great potential in on-chip integrated low-noise correlated photon pair sources at 1.5 μm.     

Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes

Different TiOx thin films prepared by graded or sufficient oxidization of Ti are applied with Pt or Ag electrode in metal？insulator-metal （MIM） structures for studying the properties and mechanisms of resistive switching. The differences on the mobile oxygen vacancies in TiOx films and different work functions of the electrode films result in different insulator-metal interface states, which are displayed as ohmic-like or non-ohmic contact. Based on the interface states, the electrical models for MIM devices are analyzed and extracted. The electrode-limited effect and the bulk-limited effect can be unified to explain the mechanisms for resistive switching behavior as the dominant effect respectively in various conditions. All the current-voltage curves of the four kinds of specimens measured in the experiments can be explained and proved in accordance with the theory.     

Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly （3-Hexylthiophene） Films

The effect of annealing on the microstructure and electrical characteristics of poly （3-hexylthiophene） （P3HT） films doped with very small amounts of the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4-TCNQ） is studied. X-ray diffraction and UV-vis spectrum studies show that unlike the pure P3HT film, the thermal treatment on the doped fihns under an Ar atmosphere can effectively enhance the crystalline order of P3HT films, as well as successfully facilitate the orientation of the polymer chains. This improvement is attributed to the electrostatic force between P3HT and F4-TCNQ molecules. This force induces the polymer chains to crystallize and orient during the annealing process. As a result, annealing significantly improves performance, especially for the Ion/Ioff ratio of the TFTs based on the doped P3HT films.