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2.
假设纤维方向角沿层合板的长度方向线性变化,研究了变角度纤维复合材料层合斜板的颤振.通过坐标变换将斜板变换为正方形板,采用层合板表面连续变化的速度环量来模拟空气对其的作用,速度环量分布利用Cauchy积分公式计算.建立了系统的Lagrange方程并采用Ritz法得到了层合板的自振频率和颤振/不稳定性分离临界速度.通过数值算例验证了本文模型和方法的正确性和收敛性,分析了各个铺层内纤维方向角的变化对自振频率和颤振/不稳定性分离临界速度的影响.研究结果表明,通过纤维的变角度铺设,可有效地提高层合板的基频和颤振/不稳定性分离临界速度.经合理设计的变角度复合材料层合板具有抑制颤振的作用. 相似文献
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Second-order random wave solutions for interfacial internal waves in N-layer density-stratified fluid 下载免费PDF全文
This paper studies the random internal wave equations describing the density interface displacements and the velocity potentials of N-layer stratified fluid contained between two rigid walls at the top and bottom. The density interface displacements and the velocity potentials were solved to the second-order by an expansion approach used by Longuet-Higgins (1963) and Dean (1979) in the study of random surface waves and by Song (2004) in the study of second- order random wave solutions for internal waves in a two-layer fluid. The obtained results indicate that the first-order solutions are a linear superposition of many wave components with different amplitudes, wave numbers and frequencies, and that the amplitudes of first-order wave components with the same wave numbers and frequencies between the adjacent density interfaces are modulated by each other. They also show that the second-order solutions consist of two parts: the first one is the first-order solutions, and the second one is the solutions of the second-order asymptotic equations, which describe the second-order nonlinear modification and the second-order wave-wave interactions not only among the wave components on same density interfaces but also among the wave components between the adjacent density interfaces. Both the first-order and second-order solutions depend on the density and depth of each layer. It is also deduced that the results of the present work include those derived by Song (2004) for second-order random wave solutions for internal waves in a two-layer fluid as a particular case. 相似文献
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This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical wpour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate. 相似文献