变截面微管道中高zeta势下幂律流体的旋转电渗滑移流动

本文研究高zeta势下具有Navier滑移边界条件的幂律流体,在变截面微管道中的垂向磁场作用下的旋转电渗流动.在不使用Debye–Hückel线性近似条件时,利用有限差分法数值计算外加磁场的旋转电渗流的电势分布和速度分布.当行为指数n=1时得到的流体为牛顿流体,将本文的分析结果与Debye–Hückel线性近似所得解析近似解作比较,证明本文数值方法的可行性.除此之外,还详细讨论行为指数n、哈特曼数Ha、旋转角速度?、电动宽度K及滑移参数β对速度分布的影响,得到当哈特曼数Ha>1时,速度随着哈特曼数Ha的增加而减小;但当哈特曼数Ha <1时, x方向速度u的大小随着Ha的增加而增加.     

非线性柱形涂层复合介质有效的直流-交流电响应

利用摄动展开方法, 研究了由圆柱形带涂层杂质随机嵌入基质所形成的非线性复合介质在外加 的带有不同频率和振幅的混合电场E₀ + E₁ sinωt+E₃ sin3ωt作用下有效的直流-交流电响应, 分别推导了复合介质在杂质核、涂层及基质区域的电势分布, 并在低杂质浓度下给出了复合介质有效的非线性响应及它们之间的关系. 关键词： 非线性柱形涂层复合介质 有效的非线性响应 外加交直流电场     

外加直流电场作用下高阶弱非线性复合介质的电势分布

利用同伦分析方法, 研究了一类由柱形杂质随机嵌入基质所形成的、电场和电流密度满足J = σ E + χ |E|²E + η|E|⁴E 形式本构关系的高阶弱非线性复合介质在外加直流电场作用下的电势分布问题. 首先利用模函数展开法, 将本构方程及边界条件化成了一系列非线性常微分方程的边值问题; 再利用同伦分析方法进行求解, 给出了电势在基质和杂质区域的渐近解析解. 关键词： 高阶弱非线性复合介质 模函数展开法 同伦分析方法 电势分布     

三层流体界面内波的二阶Stokes解

以小振幅波理论为基础，利用摄动方法研究了三层密度成层状态下的界面内波，求得了三层成层状态下各层速度势的二阶渐近解及界面内波波面位移的二阶Stokes解.结果表明：一阶解为正弦波解，与传统线性理论的结果相一致；二阶解描述了界面波的二阶非线性修正及两界面波之间的非线性相互作用；一阶解及二阶解都依赖于各层流体的厚度及密度.Umeyama导出的理论结果为本文的特殊情形. 关键词： 三层密度成层流体 内波 二阶Stokes解 小振幅波理论     

Second-order random wave solutions for interfacial internal waves in N-layer density-stratified fluid

This paper studies the random internal wave equations describing the density interface displacements and the velocity potentials of N-layer stratified fluid contained between two rigid walls at the top and bottom. The density interface displacements and the velocity potentials were solved to the second-order by an expansion approach used by Longuet-Higgins （1963） and Dean （1979） in the study of random surface waves and by Song （2004） in the study of second- order random wave solutions for internal waves in a two-layer fluid. The obtained results indicate that the first-order solutions are a linear superposition of many wave components with different amplitudes, wave numbers and frequencies, and that the amplitudes of first-order wave components with the same wave numbers and frequencies between the adjacent density interfaces are modulated by each other. They also show that the second-order solutions consist of two parts： the first one is the first-order solutions, and the second one is the solutions of the second-order asymptotic equations, which describe the second-order nonlinear modification and the second-order wave-wave interactions not only among the wave components on same density interfaces but also among the wave components between the adjacent density interfaces. Both the first-order and second-order solutions depend on the density and depth of each layer. It is also deduced that the results of the present work include those derived by Song （2004） for second-order random wave solutions for internal waves in a two-layer fluid as a particular case.     

微通道中一类生物流体在高Zeta势下的电渗流及传热特性

在高壁面Zeta势下,研究滑移边界条件下满足牛顿流体模型的一类生物流体的电渗流动及传热特性,流体在外加电场、磁场和焦耳加热共同作用下流动.首先,在不使用Debye-Hückel线性近似条件时,利用切比雪夫谱方法给出非线性Poisson-Boltzmann方程和流函数满足的四阶微分方程及热能方程的数值解,将所得结果与利用Debye-Hückel线性近似所得结果进行比较,证明本文数值方法的有效性.其次,讨论电磁环境下壁面Zeta势、哈特曼数H、电渗参数m、滑移参数β对流动特性、泵送特性和捕获现象的影响,并探究焦耳加热参数γ和布林克曼数Br等参数对传热特性的影响.结果表明,壁面Zeta势、电渗参数m、滑移参数β的增大对流体速度有促进作用,而哈特曼数H的增大会抵抗流体流动.研究进一步表明,焦耳加热参数γ和布林克曼数Br的增大会导致温度升高.     

氧化钛-氧化石墨插层结构及其光催化性能(英文)

采用氧化石墨(GO)和硫酸钛作为初始反应物,在低温下(80℃)制备了纳米级的氧化钛-氧化石墨插层(TiO2-GO)复合材料,研究了这一复合材料的紫外光催化性能.结果表明,在采用TiO2-GO插层复合材料对甲基橙溶液进行紫外光催化降解时,其降解效率η=1.17mg·min-1·g-1,明显优于德固赛P25氧化钛粉.通过对TiO2-GO插层复合材料进行X射线衍射(XRD)、傅里叶红外(FT-IR)光谱、X射线光电子能谱(XPS)和场发射扫描电子显微镜(FESEM)等测试,表征了产物的晶相结构、界面状况及其显微结构.结果表明:插层结构中的TiO2晶粒为锐钛矿和金红石的混合相,且锐钛矿相含量大于金红石相含量;氧化石墨层间的含氧基团如C襒O,基本被还原.对TiO2-GO插层复合材料的形成机理以及该材料具有优越光催化性能的原因进行了探讨.     

三层流体系统非线性界面内波传播理论的研究

基于波陡很小的假设, 利用摄动法, 讨论了任意深度的二维不可压缩、无黏性、无旋的三层流体系统. 在刚性上边界、平底不可渗透条件下, 给出了界面内波传播的统一理论以及描述其波剖面的近似非线性演化方程(NEEs). 最后讨论了几种特殊情形下的近似NEEs.结果表明文献导出的理论结果为本文的特殊情形.     

Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming

A phase change memory （PCM） device, based on the Ge2Sb2Te5 （GST） material, is fabricated using the standard 0.18-μm CMOS technology. After serials of detailed experiments on the phase transition behaviors, we find that the RESET process is strongly dependent on the state of the inactive area and the active area affects the SET process dramatically. By applying a 5-mA current-voltage （I — V） sweep as initial operation, we can reduce the voltage drop beyond the active area during the RESET process and the overall RESET voltage decreases from 3 V plus to 2.5 V. For the SET operation, a non-cumulative programming method is introduced to eliminate the impact of randomly formed amorphous active area, which is strongly related to the threshold switching process and SET voltage. Combining the two methods, the endurance performance of the PCM device has been remarkably improved beyond 1 × 106 cycles.     

Second-order solutions for random interfacial waves in N-layer density-stratified fluid with steady uniform currents

In the present paper, the random interfacial waves in N-layer density-stratified fluids moving at different steady uniform speeds are researched by using an expansion technique, and the second-order asymptotic solutions of the random displacements of the density interfaces and the associated velocity potentials in N-layer fluid are presented based on the small amplitude wave theory. The obtained results indicate that the wave-wave second-order nonlinear interactions of the wave components and the second-order nonlinear interactions between the waves and currents are described. As expected, the solutions include those derived by Chen （2006） as a special case where the steady uniform currents of the N-layer fluids are taken as zero, and the solutions also reduce to those obtained by Song （2005） for second-order solutions for random interfacial waves with steady uniform currents if N = 2.