天然磷脂的色谱法分离、纯化研究进展

天然磷脂是一类含磷酸根的类脂化合物的总称,在医药学、营养学、化妆品和生命科学领域等有重要的应用价值。本文综述了不同原料样品中磷脂种类和其各分子的色谱法分离、纯化。着重讨论高效液相色谱法分离技术及其影响因素。最后概述了有助于提高分离选择性、检测灵敏度的化学衍生化方法。     

非对易克莱因-高登朗道问题的海森伯代数

文中我们在非对易量子力学(NCQM)的框架下讨论了克莱恩-高登朗道问题.分别在非对易空间(NCS)和非对易相空间(NCPS)中给出了海森伯代数和克莱恩-高登朗道能级.     

基于排队的库存服务系统最优控制策略

研究一个连续盘点的(s,Q)补货的库存服务系统。基于排队理论建立库存水平状态平衡方程,并推导出库存水平稳态概率分布以及作为库存控制的系统稳态性能指标。以库存成本最小化为目标,构建服务水平约束的库存控制模型。针对模型的非线性约束与整数型变量的特征,采用一种改进的遗传算法(IGA)用于决策变量的寻优。数值实验表明,当目标服务水平大于库存系统内生的服务水平时,实施服务水平约束能够降低库存控制成本。     

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

We report a type of thin film Al Ga In P red light emitting diode(RLED) on a metallic substrate by electroplating copper(Cu) to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power(LOP) by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm~2 and 35 A/cm~2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.     

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors

According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.     

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.     

Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal–insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from(1ˉ11) to(011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal–insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal–insulator transition.     

煤粉燃烧炉内细颗粒物沿程演化特性模拟

本文针对微米及亚微米细颗粒物在煤粉自维持燃烧高温一维炉中的沿程演化特性进行了定量模拟。从高温火焰区到焦炭燃烧区,利用聚并机理和碳烟氧化模型计算了细颗粒物浓度的粒径分布(PSD)变化,表明碳烟氧化是焦炭燃烧区颗粒浓度分布变化的主要因素,仅聚并作用无法生成PM_(0.1)以上颗粒。并通过预设碳烟份额得到与实验值吻合较好的焦炭燃烧区出口颗粒浓度分布曲线。     

GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer

A GaN interlayer between low temperature （LT） A1N and high temperature （PIT） A1N is introduced to combine HT AIN, LT A1N and composition-graded A1GaN as a novel buffer layer for GaN films grown on Si （111） substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT A1N, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT A1N thickness.     

电大开孔箱体屏蔽效能分析解析模型

电磁脉冲武器能够通过"前、后门"耦合效应对箱体内部电子元器件及电路板造成损伤,从而对电气电子设备的安全性构成严重威胁,因此,开展箱体电磁屏蔽效能的分析研究具有重要意义.推导了任意入射波条件下电大开孔箱体屏蔽系数的解析解,并在此基础上对箱体屏蔽效能进行了分析研究.首先通过矢量分解,得出任意入射平面波的坐标分量;再基于Cohn模型,获得了电大开孔的等效电偶、磁偶极子;然后通过镜像原理,计算出总的赫兹电矢量位、磁矢量位;最终求得电大开孔箱体内部任意观测点的电场解析解,用于箱体屏蔽系数计算.设计了5组验证性实验,仿真结果表明:该解析算法相对CST的均方误差为11.565 d B,绝对误差为8.015 d B,相关系数为0.921,从而验证了该算法的准确性;解析算法仿真的平均耗时为0.183 s,仅占CST耗时的1/7530,从而验证了该算法的高效性.