| Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties |
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| 引用本文： | 梁继然,吴劢君,胡明,刘剑,朱乃伟,夏晓旭,陈弘达.Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties[J].中国物理 B,2014(7):617-621. |
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| 作者姓名： | 梁继然 吴劢君 胡明 刘剑 朱乃伟 夏晓旭 陈弘达 |
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| 作者单位： | School of Electronic Information and Engineering,Tianjin University;State Key Laboratory for Super Lattices and Microstructures Institute of Semiconductors,Chinese Academy of Sciences;State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors,Chinese Academy of Sciences |
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| 基金项目： | supported by the National Natural Science Foundation of China(Grant No.61101055);the Research Fund for the Doctoral Program of HigherEducation,China(Grant No.20100032120029) |
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| 摘 要： | Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal–insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from(1ˉ11) to(011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal–insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal–insulator transition.
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| 关 键 词： | vanadium dioxide metal–insulator transition rapid thermal annealing hysteresis |
Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties |
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| Liang Ji-Ran,;Wu Mai-Jun,;Hu Ming,;Liu Jian,;Zhu Nai-Wei,;Xia Xiao-Xu,;Chen Hong-Da.Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties[J].Chinese Physics B,2014(7):617-621. |
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| Authors: | Liang Ji-Ran ;Wu Mai-Jun ;Hu Ming ;Liu Jian ;Zhu Nai-Wei ;Xia Xiao-Xu ;Chen Hong-Da |
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| Abstract: | vanadium dioxide, metal-insulator transition, rapid thermal annealing, hysteresis |
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| Keywords: | vanadium dioxide metal-insulator transition rapid thermal annealing hysteresis |
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