云南重楼中的新甾体皂苷

从云南重楼Paris polyphylla Sm. var. yunnanensis(France. )Hand.-Mazz.的干燥根茎中分离鉴定了4个甾体皂苷(1~4), 其中化合物1是新化合物, 采用波谱技术鉴定其结构为24-O-β-D-吡喃半乳糖基-(23S,24S)-螺甾-5, 25(27)-二烯-1β,3β,23,24-四醇-1-O-β-D-吡喃木糖基(1→6)-β-D-吡喃葡萄糖基(1→3)[α-L-吡喃鼠李糖基(1→2)]-β-D-吡喃葡萄糖苷.     

微波辐射条件下季戊四醇双缩醛和双缩酮化合物的合成

微波辐射硫酸锆-硅胶催化季戊四醇与醛、酮缩合反应,高收率制得了双缩醛和双缩酮化合物.该方法操作简便,收率高,催化剂可重复使用,是一种环境友好型催化反应.     

原位合成分子筛膜毛细管色谱柱的研制

吸附型多孔层毛细管柱既耐高温又对气体及烃类异构体有选择性，同时又具有毛细管色谱快速、高效等优点，是解决难分离组分的重要柱型．常用作气一固吸附色谱固定相的有强极性的硅、中极性的氧化铝、非极性的碳质及特殊吸附作用的分子筛．其中分子筛以其独特的吸附作用，在永久性气体和烃类碳数族组成分析中有重要地位．Pruecell和Soulages[1，2]等制备了涂渍型5A和13X型分子筛的毛细管柱，对低碳烃类化合物显示了良好的分离能力，分析柱温较填充柱降低约100℃．邹乃忠等[3～5]也先后制备了分子筛层的毛细管柱用来作直馏汽油的分析．由于通…     

1-苯基-3-甲基-4-苯甲酰基-5-吡唑酮与甲基膦酸二(1-甲基庚基)酯对Pb(Ⅱ)、Cd(Ⅱ)和Cu(Ⅱ)的萃取机理研究

本文用两相滴定法研究了1-苯基-3-甲基-4-苯甲酰基-5-吡唑酮(PMBP,简写为HA)与甲基膦酸二(1-甲基庚基)脂(P₃₅₀,简写为B)对Pb²⁺、Cd₂₊和Cu²⁺离子在不同的有机溶剂中的萃取机理.确定了萃合物的组成分别为:MA₂(M=Pb²⁺、Ca²⁺、Cu²⁺);MA₂·HA(M=Cd²⁺);MA₂·B(M=Pb²⁺、Cd²⁺)和MA₂·2B(M=Cd²⁺),同时求得了相应的萃合常数β值.     

Ionic Liquid Based Electrolyte with Mesoporous Silica SBA-15 as Framework for Quasi-solid-state Dye-sensitized Solar Cells

Quasi-solid-state electrolytes were fabricated with mesoporous silica SBA-15 as a framework material. Ionic conductivity measurements revealed that SBA-15 can enhance the conductivity of the quasi-solid-state electrolyte. The diffusion coefficients of polyiodide ions such as Ⅰ3ˉ and Ⅰ5ˉ which were confirmed by Raman spectroscopic measurement, were about twice larger than that of I-. The optimized photoenergy conversion efficiency of dye-sensitized solar cells （DSSC） with the quasi-solid-state electrolyte was 4.3% under AM 1.5 irradiation at 75 mW·cm^-2 light intensity.     

荧光探针法确定胶束的宏观结构参数

胶束是表面活性剂分子在溶液(水溶液或非水溶液)中簇集而成的。在表面活性剂的临界胶束浓度(cmc)以上不太高的浓度范围内,胶束的结构被认为是球状的。水溶液中胶束的结构示于图1。近年来胶束在模拟酶、催化反     

功能化离子液体液化木粉及其酚醛复合材料

合成了氯代1-(2-羟乙基)-3-甲基咪唑离子液体[He MIM]Cl、溴代1-乙胺基-3-甲基咪唑离子液体[Ae MIM]Br和氯代1-羧乙基-3-甲基咪唑离子液体[Ce MIM]Cl 3种功能化咪唑离子液体,并分别进行了红外与氢核磁结构表征.然后用3种离子液体液化木粉,液化3 h后向体系直接加入苯酚、甲醛和氢氧化钠,制备酚醛复合材料,并采用FTIR、XRD、DSC和SEM对酚醛复合材料进行结构、性能与形貌测试,研究离子液体种类对木粉液化率及酚醛树脂性能的影响.结果表明,离子液体及其液化木粉产物制备的酚醛复合材料性能得到明显改善.[Ce MIM]Cl液化效果最好,90℃液化率高达24.6%,当[Ce MIM]Cl与木粉质量比为10∶1时,制备的酚醛复合材料的游离醛释放量由原来的3.64%降低到0.92%.离子液体[Ae MIM]Br能将酚醛复合材料的冲击强度由原来的0.93 k J/m2提高到6.96 k J/m2,而[Ae MIM]Br及其液化的木粉产物制备的酚醛复合材料拉伸强度从原来的3.28 MPa提高到9.70 MPa.     

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

任意阶光子先增后减和先减后增相干态的非经典性

研究了任意阶的光子先增后减(CA)和光子先减后增(AC)相干态的非经典特性,并给出了相应的解析表达式.AC操作和CA操作由于湮灭算符和产生算符的不对易性,导致产生的两种态具有不同的非经典特性.文中首先给出了两种态的归一化因子的解析表达式,随后在此基础上研究了MandelQ参数、光子数分布和Wigner函数等表征非经典特性的统计量,研究表明两种态都具有非常明显的非经典特性,并且AC操作比CA操作能产生更强的非经典性.     

An Efficiency Enhanced Graphene/n-Si Schottky Junction for Solar Cells

A novel and facile oxidation-induced self-doping process of graphene-silicon Schottky junction by nitric acid(HNO_3) vapor is reported. The HNO_3 oxidation process makes graphene p-type self-doped, and leads to a higher built-in potential and conductivity to enhance charge transfer and to suppress charge carrier recombination at the graphene-silicon Schottky junction. After the HNO_3 oxidation process, the open-circuit voltage is increased from the initial value of 0.36 V to the maximum value of 0.47 V, the short-circuit current is greatly increased from 0.80μA to 7.71μA, and the ideality factor is optimized from 4.4 to 1.0. The enhancement of the performance of graphene-Si solar cells may be due to oxidation-induced p-type self-doping of graphene-Si junctions.