Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

The latch-up effect induced by high-power microwave(HPM) in complementary metal–oxide–semiconductor(CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency(PRF) is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.     

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

An electromagnetic pulse(EMP)-induced damage model based on the internal damage mechanism of the Ga As pseudomorphic high electron mobility transistor(PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.     

一种基于S曲线模型的红外焦平面阵列非均匀性自适应校正算法

针对红外焦平面阵列(IRFPA)中探测元的非线性响应以及响应特性的漂移引起的校正误差,提出了一种基于S曲线模型的场景自适应校正算法.该算法利用对数运算将IRFPA的输出信号线性化.并运用自适应滤波技术对线性信号实施非均匀性校正,并采用指数变换还原出实际的校正输出信号.基于人造黑体图像和实景红外视频的仿真实验结果表明.该算法在校正精度和大动态范围信号响应特性方面均优于传统的场景自适应校正算法.     

An interconnect width and spacing optimization model considering scattering effect

As the feature size of the CMOS integrated circuit continues to shrink, the more and more serious scattering effect has a serious impact on interconnection performance, such as delay and bandwidth. Based on the impact of the scattering effect on latency and bandwidth, this paper first presents the quality-factor model which optimises latency and bandwidth effectively with the consideration of the scattering effect. Then we obtain the analytical model of line width and spacing with application of curve-fitting method. The proposed model has been verified and compared based on the nano-scale CMOS technology. This optimisation model algorithm is simple and can be applied to the interconnection system optimal design of nano-scale integrated circuits.     

p型K:ZnO导电机理的第一性原理研究

基于密度泛函理论,利用局域密度近似的第一性原理平面波赝势方法,对掺K以及含有氢填隙(H_i)、氧空位(V_O)、锌填隙(Zn_i)和锌空位(V_Zn)的K:ZnO电子结构分别进行了研究.结果表明,1) 单独掺K可引入浅受主,但系统总能增高;2) K与H共掺可降低系统总能,提升稳定性;3) V_O在K+H:ZnO中的形成比Zn_i困难得多,二者都是 关键词： 氧化锌 p型 第一性原理 电子结构     

三维单芯片多处理器温度特性

给出热阻矩阵的表达式,研究三维单芯片多处理器(3D CMP,three-dimensional chip-multiprocessor)的温度特性,通过Matlab分析热容、热阻和功耗对温度的影响.结果表明:减小热阻和功耗可以有效约束3D-CMP的稳态温度;热容增大可以导致3D-CMP温度上升时间变长,但不影响其最终稳态温度.     

Effects of microwave pulse-width damage on a bipolar transistor

This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves (HPMs) through the injection approach. The dependences of the microwave damage power, P, and the absorbed energy, E, required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method. A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out. By means of a two-dimensional simulator, ISE-TCAD, the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively. The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different, while only one hot spot exists under the injection of dc pulses. The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy, respectively. The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.     

超导Josephson结直流I—V特性的数值计算

为了研究超导Josephson结的性质，选用四阶龙格一库塔法对RSJ模型下单个Josephson结及其阵列以及微波辐照下Josephson结的直流I-V特性进行了数值计算，并将模拟结果与实验结果进行了比较．     

PZT铁电材料的总剂量辐照效应实验研究

 采用传统固相反应法制备PZT铁电材料，并制作成平行平板无源电容器结构，在ELV-8电子直线加速器上进行了总剂量效应辐照实验。结果表明：样片经过不同强度高能高速直流电子束辐照后的电滞回线随着辐照强度的增加，电滞回线所包围的面积逐渐减小，饱和极化强度、剩余极化强度和矫顽场呈线性减小。其中当辐照剂量为1×10⁸rad（Si）时，饱和极化强度、剩余极化强度和矫顽场的衰减幅度分别为14.1%,15.0%和2.7%，样片抗总剂量辐照能力可达1×10⁸rad（Si）。