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朱樟明  郝报田  杨银堂  李跃进 《中国物理 B》2010,19(12):127805-127805
Interconnect power and repeater area are important in the interconnect optimization of nanometer scale integrated circuits.Based on the RLC interconnect delay model,by wire sizing,wire spacing and adopting low-swing interconnect technology,this paper proposed a power-area optimization model considering delay and bandwidth constraints simultaneously.The optimized model is verified based on 65-nm and 90-nm complementary metal-oxide semiconductor(CMOS) interconnect parameters.The verified results show that averages of 36% of interconnect power and 26% of repeater area can be saved under 65-nm CMOS process.The proposed model is especially suitable for the computer-aided design of nanometer scale systems-on-chip.  相似文献   
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董刚  杨银堂  李跃进 《计算物理》2006,23(6):753-756
为了,分析多芯片组件的互连功耗,用RLC传输线模型对多芯片组件的互连进行表征,通过对输入互连的电流及其等效电阻的近似,推导出多芯片组件互连功耗的频域数学表达式,给出计算机仿真试验结果,对方法的有效性进行验证。  相似文献   
4.
应用断流分光光度计(Stopped-Flow Spectrophotometer)研究了镍(II)与N-(对位取代苯基)氨基乙酸-(ρ-RC6H4NHCH2COOH, R=CH3O, CH3, H, Cl, 简写为NROH或HL)在25℃及30%(v/v)乙醇溶液中生成配合物的反应动力学. 实验结果表明, 不仅氨基酸配体的负离子(NRO^-或L^-)具有较高的反应活性, 而且两性离子(HN^+RO^-或^+HL^-)也是有效的反应配体. 反应按双途径进行, 即按Eigen-Tamm机理进行的NRO^-途径和以质子迁移为速率控制步骤的两性离子途径. 两性离子的反应活性(以log kHL^±表示)与配体的碱性强度(pK2)之间呈现直线自由能关系. 并发现镍(II)配合物的离解反应速率常数(log k-L^-)与配体的碱性强度(pK2)和配合物的稳定常数(log KNiL^N^i)之间均存在直线自由能关系.  相似文献   
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β-SiC薄膜在SF6和SF6+O2中的等离子体刻蚀研究   总被引:4,自引:0,他引:4       下载免费PDF全文
以SF6和SF6+O2为刻蚀气体,采用等离子体刻蚀工艺成功地对化学气相淀积工艺制备的β-SiC单晶薄膜进行了有效的刻蚀去除.实验指出当气体混合比约为40%时,刻蚀速率达到最大值.俄歇能谱分析表明,在SF6和SF6+O2气体中被刻蚀后的样品没有形成富C表面的SiC层.研究结果为各种SiC器件的研制奠定了必要的实验基础. 关键词:  相似文献   
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On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising clock frequency, therefore it is meaningful to lower the interconnecting bus power in design. In this paper, a simple yet accurate interconnect parasitic capacitance model is presented first and then, based on this model, a novel interconnecting bus optimization method is proposed. Wire spacing is a process for spacing wires for minimum dynamic power, while wire ordering is a process that searches for wire orders that maximally enhance it. The method, i.e., combining wire spacing with wire ordering, focuses on bus dynamic power optimization with a consideration of bus performance requirements. The optimization method is verified based on various nanometer technology parameters, showing that with 50% slack of routing space, 25.71% and 32.65% of power can be saved on average by the proposed optimization method for a global bus and an intermediate bus, respectively, under a 65-nm technology node, compared with 21.78% and 27.68% of power saved on average by uniform spacing technology. The proposed method is especially suitable for computer-aided design of nanometer scale on-chip buses.  相似文献   
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本文研究了双(二苯基烷基膦)合(五溴苯基)溴化镍(II)(简写:MBr)与SCN~-,N_3~-,NO_2~-,和I~-的亲核取代反应动力学.反应遵循两项速率定律:r=(k_1+K_2[Y~-])[MBr].根据实验结果提出了反应机理.讨论了亲核试剂和溶剂等对反应速率的影响.  相似文献   
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具有共轭主链聚合物单晶的低温电导测定   总被引:2,自引:0,他引:2  
用自行组装的低温电导测定装置对77~373K温度范围内双(对甲苯磺酸)-2,4-己二炔-1,6-二醇酯(TS)及其聚合物PTS单晶体的暗电导进行了测定。在c方向上相应于它们低温相转变的温度,TS和PTS的电导均出现异常,此时TS的相变温度是163K和208K。  相似文献   
9.
讨论红外保护膜的作用,分析和介绍保护膜的机械强度以及保护膜的外应力和内应力产生的破坏和影响,并提出了应对措施,探讨保护膜在恶劣环境下的光学性能,指出优化控制膜厚的重要性。  相似文献   
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The kinetics of the metal exchange reactions between (5-R-phen)copper(II) (R = Me, H, Cl, and NO2) and Ni(II) was studied at 25?and ionic strength 1.0 mol dm-3 or pH 2.3-3.5. The rate of the exchange reactions was measured by a spectrophotometer. The reactions appeared to proceed through 3 different pathways which involved H+ attack and Ni attack as well as a pH- and Ni-independent dissociation of the complexes. The kinetics conforms to the following rate law: d[Ni(5-R-phen)]/dt = (kp + kH[H+] + kNi[Ni2+])[(Cu(5-R-phen)2+]. The reaction rate of the 3 pathways increased with decreasing basicity of the ligand. Some linear free energy relationships were found to exist between the reactivity of these Cu(II) complexes and the base strength of the ligand 5-R-phen. The mechanisms of the reactions are discussed.  相似文献   
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