晶粒尺寸及衬底应力对铁电薄膜特性的影响

考虑衬底应力、畴壁运动和畴结构变化, 建立了修正的Landau-Devonshire热力学模型, 计算了生长在不同衬底上的含有纳米晶粒的PbZr_0.4Ti_0.6O₃(PZT)薄膜的电滞回线, 研究了矫顽场、剩余极化强度和相对介电常数对晶粒尺寸以及薄膜厚度的依赖关系. 结果表明, 矫顽场和相对介电常数对晶粒尺寸的依赖关系呈类抛物线状;衬底压应力使矫顽场和剩余极化强度增大, 使相对介电常数减小;随着厚度增加, 矫顽场先缓慢增加, 到200 nm 关键词： 铁电体 晶粒尺寸 衬底应力 薄膜厚度     

国产高Z闪烁晶体的辐照损伤研究

在总强度为10⁵Ci^的60Co γ射线辐照装置上开展了国产高Z闪烁晶体的辐照损伤研究.在5×10³—7.5×10⁵rad剂量范围内测量了小尺寸BGO晶体样品的辐照损伤效应,观察到损伤随剂量增加逐渐趋于饱和的现象;辐照损伤的自然恢复过程可用三组时间常数表征的指数函数描述.在5×10⁵rad剂量下,考察了BaF₂,CsI(Tl)以及ZnWO₄晶体小尺寸样品的辐照损伤效应.发现了BaF₂的严重损伤情况,初步分析原因可能是晶体中某些微量杂质的存在.     

铌锰锆钛酸铅铁电陶瓷电滞回线的温度和频率响应

研究了Pb［(Zr052Ti048)095(Mn1/3Nb2/3)005］O3 (PMnN_PZT) 铁电陶瓷电滞回线的温度和频率响应,结果显示在高频和室温条件下测试铁电特性时,电滞回线呈现“束腰”形状,而不是通常所看到的方形回线 . 在低频和高温条件下测试时才能观察到正常的方形回线,同时,诸如矫顽场、极化强度、 内偏场这些重要的铁电参数也会随频率和温度发生显著的变化. 剩余极化强度随频率和温度 的大幅增长表明“束腰” 电滞回线有可能是由于缺陷偶极子引起的. 电滞回线形状与温度 和频率存在较强的相关性说明缺陷偶极子存在一特征弛豫时间,缺陷偶极子反转响应速度由 此弛豫时间决定. 关键词： 电滞回线 氧空位 频率响应 温度响应     

铁电体低频电滞回线的测量

一、引 言 电滞回线是铁电体的主要特征之一,电滞回线的测量是检验铁电体的一种主要手段,常见的电滞回线如图1所示.通过电滞回线的测量,可测定铁电体的剩余极化强度Pr和矫顽场强Ec,对材料的研制和应用都有很大的意义. 测量电滞回线的基本电路是Sawyer-Tower回路,近年来测量频率已由50Hz向低频方面发展,其原因是铁电体的电滞回线与温度有密切关系.在50Hz的频率测量时,由于介电损耗而使试样发热,因此,测量结果不能反映真实的温度关系.尤其重要的是,就所测电滞回线来说,50Hz的频率太高,既不能测量铁电体的起始回线,也无法用函数记录仪记录.…     

质子辐照空间级硅橡胶的正电子淹没寿命谱研究

 用正电子淹没寿命谱方法（PALS）研究了质子辐照对空间级硅橡胶KH-L-Y微观结构的影响。试验结果表明，PALS谱所揭示的最长寿命成分的t₃, I₃及自由体积分数Vf随辐照剂量的增加开始明显下降；而当辐照剂量大于10¹⁵cm^-2后，随剂量的增加平缓上升。辐照剂量小于10¹⁵cm^-2时，质子辐照使硅橡胶自由体积减小，分子链间堆砌紧密；辐照剂量大于10¹⁵cm^-2时，质子辐照使硅橡胶自由体积增大。交联密度及DMA测试结果同样表明，质子辐照在剂量较小时硅橡胶的交联密度及玻璃化转变温度增加，辐照以交联效应为主；而剂量较大时辐照降解占优势。     

相场模拟应变调控PbZr_((1–x))Ti_xO_3薄膜微观畴结构和宏观铁电性能

外延生长铁电薄膜中基底失配应变能够调控微观铁电畴结构和宏观铁电性能.本文选择了三种相结构(四方相、四方和菱方混合相、菱方相) PbZr_((1–x))Ti_xO_3 (x=0.8, 0.48, 0.2)铁电薄膜,利用相场模拟研究了在不同基底失配应变(esub)作用下,三种成分铁电薄膜中微观畴结构的演化以及宏观极化-电场回线.随着应变从–1.0%变化到1.0%,三种相结构铁电薄膜的矫顽场、饱和极化值以及剩余极化值全都降低,其中PbZr_(0.52)Ti_(0.48)O_3薄膜的饱和极化值和剩余极化值比另外两种薄膜降低更快.模拟结果表明拉应变能提高铁电薄膜储能效率,其中准同型相界处应变提升储能效率最快.本工作揭示了应变对PbZr_((1–x))Ti_xO_3铁电薄膜中畴结构、电滞回线以及储能等方面的影响,为铁电功能薄膜材料的实验设计提供了理论基础.     

外延PbZr0.4Ti0.6O3薄膜厚度对其铁电性能的影响

从Landau-Devonshire唯象理论出发，考虑到晶格失配导致的NFDA3位错应力场与极化场的耦合，研究了在SrTiO₃衬底上外延生长的PbZr_0.4Ti_0.6O₃薄膜厚度对其自发极化强度、电滞回线的影响. 结果表明，产生刃位错的PbZr_0.4Ti_0.6O₃薄膜临界厚度为～1.27nm，当薄膜厚度大于临界厚度时，在所形成的位错附近，极化强度出现急剧变化，形成自发极化强度明显减弱的“死层”；随着薄膜厚度的减小，位错间距增大，“死层”厚度与薄膜总厚度之比增加. 由薄膜电滞回线的变化情况可知，其剩余极化强度随着薄膜厚度的减小而逐渐减小. 关键词： 铁电薄膜 自发极化强度 电滞回线 位错     

keV 质子辐照对Kapton/Al光学性能的影响

 采用空间综合辐照设备对Kapton/Al薄膜进行了质子辐照地面模拟试验，选取质子能量90 keV,辐照通量5.0×10¹¹ cm¹²·s^-1。通过辐照前后光谱反射系数的变化考察了实验样品的光学性能退化特征。借助于反射光谱和紫外-可见吸收光谱和傅里叶转换红外光谱分析技术分析了辐照后Kapton/Al光学性能的退化机理。研究结果表明：辐照过程中样品表面发生了复杂的化学反应，随着辐照剂量的增加光能隙逐渐减小，Kapton吸收曲线的末端边缘发生红移并且在可见光区吸收强度增加。     

SrBi2Ta2O9铁电薄膜微结构及其抗疲劳等铁电特性的研究

在低温Pt/Ti/SiO₂/Si衬底上用脉冲准分子激光沉积技术结合氧气氛下700℃退火获得高质量的SBT薄膜，其择优取向为（008）和（115）．薄膜厚度约为200nm．铁电性能测试显示较饱和的、方形的电滞回线，其剩余极化和矫顽电场分别为10μC/cm²和57kV/cm，在10¹⁰次开关极化后没有显示任何疲劳，在5V直流电压下的漏电流密度约为4×10^-8A/cm²，直流击穿电场约为250kV/cm 关键词：     

溶胶-凝胶法制备Sr2Bi4Ti5O18薄膜及其铁电性能研究

采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO2/Si(100)衬底上的铁电性能优良的Sr2Bi4Ti5O18(SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明:薄膜具有单一的层状钙钛矿结构,且为随机取向;薄膜表面光滑,无裂纹,厚度约为725nm;铁电性能测试显示较饱和、方形的电滞回线,当外电场强度为275kV/cm时,其剩余极化2Pr和矫顽场2Ec分别为24.0μC/cm2和137.8kV/cm;疲劳测试发现薄膜经过4.4×1010次极化反转后,基本没有显示疲劳.     

Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films

Lead zirconate titanate piezoelectric ceramics have important applications in space and aerospace technology, but the effect and physical mechanism of charged particle radiation on their performance yet to be clarified. In this study,we characterized PbZr_(0.52)Ti_(0.48)O_3(PZT) thin films, and changes in the ferroelectric properties of the films before and after electron and proton irradiation were investigated. The natural and heat treatment recoverability of the ferroelectric properties were studied, and the damages and mechanisms of different types of radiation in PZT films were also investigated.The results show that, in addition to ionization damages, electron irradiation causes certain structural damage on the PZT film, and the large structural damage caused by proton irradiation reduces drastically the ferroelectricity of the PZT film.     

Thin-film capacitor M/Pb(ZrTi)O3/M as a polarization-sensitive photocell

A steady-state short-circuit photocurrent of preliminarily polarized submicron capacitors with a polycrystalline Pb(ZrTi)O₃ (PZT) film is investigated under irradiation by light with a wavelength λ > 0.4 μm. The structures with different M/PZT interfaces that differ in the leakage current by more than an order of magnitude are found to demonstrate virtually the same value of the photocurrent, which is always directed opposite to the ferroelectric polarization of the PZT film. Although the magnitude of photocurrent is determined by the degree of polarization of the film, the observed photocurrent is not a depolarization current of the ferroelectric film. Therefore, the M/PZT/M capacitor behaves like a polarization-sensitive photocell. Within the proposed theory of a heterophase medium, the dependence of the photocurrent on the magnitude of the preliminary polarization is calculated and proves to be in reasonable agreement with the experimental results.

     

Nanoembossing and piezoelectricity of ferroelectric Pb(Zr0.3,Ti0.7)O3 nanowire arrays

Arrays of ferroelectric PZT nanowires with lateral size down to 200 nm were fabricated by nanoembossing technology. Structural characterization of the embossed PZT film was studied by Raman spectroscopy. Multidomain configurations of a single nanowire have been explored by vertical mode piezoresponse force microscopy (VPFM). The local electric polarization of the individual ferroelectric nanowire has also been investigated. Excellent ferroelectric and piezoelectric characteristics observed in the embossed PZT nanowires suggest nanoembossing technique proposed in this work is promising to become a useful method for ferroelectric nanowires fabrication.     

强电流铁电阴极电性能参数与发射结果的关系研究

 在实验结果的基础上,从理论上阐述了材料的电滞回线、介电常数、压电常数等性能对电流发射性能的明显影响,并通过材料的掺杂改性提高材料的性能参数,从而达到了提高发射电流密度的目的。     

Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm², respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.     

Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating

We report the fabrication of single-walled carbon nanotube (SWCNT) network transistors by ferroelectric Pb(Zr_0.4Ti_0.6)O₃ (PZT) bottom-gating and investigate the polarization effects of PZT on the transport properties of the transistor device. Our devices exhibit typical p-channel transistor characteristics and a large hysteresis loop with high ON/OFF current ratio and large ON current as well as memory window (MW) measured up to 5.2 V. The origin of clockwise hysteresis is attributed to ferroelectric polarization modulated charge trapping/de-trapping process in the interface states between SWCNT networks and PZT. The retention time about 10⁴s with two high stable current states preliminarily demonstrates great potential for future non-volatile memory applications based on such SWCNT/PZT hybrid systems.     

Phase evolution and effect of pre-heating temperature on the characteristics of PZT thin films grown by using a triol sol--gel route

Lead zirconate titanate (PZT) films were fabricated on Pt(111)/Ti/SiO₂/Si(100) using the triol sol--gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties and ferroelectric properties of the PZT thin films was investigated. Randomly-oriented PZT thin films pre-heated at 400°C for 10?min and annealed at 600°C for 30?min showed well-defined ferroelectric hysteresis loops with a remanent polarization of 26.57?µC?cm^?2 and a coercive field of 115.42?kV?cm^?1. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free and homogeneous with fine grains about 15–20?nm in size.     

γ-ray irradiation effect on hysteresis symmetry and data retention of Pt/SrBi2Ta2O9/Pt thin-film capacitors

The γ-ray irradiation effect on hysteresis symmetry and data retention of Pt/SrBi₂Ta₂O₉/Pt ferroelectric thin-film capacitors has been investigated as a function of irradiation dose. A horizontal shift of polarization–voltage curves along the voltage axis, known as imprint, was observed after the polarized capacitors had been irradiated. The voltage shift increased with increasing irradiation dose and increasing remanent polarization written before irradiation. After irradiation, severe data loss was observed after these capacitors had been written to the state opposite to the one stored during irradiation. Possible functional failure due to such a data loss was discussed. Received: 17 January 2001 / Revised version: 27 April 2001 / Published online: 20 June 2001     

铁电存储器~(60)Co γ射线及电子总剂量效应研究

以型号为FM28 V100的铁电存储器为研究对象,进行了~(60)Co γ射线和2 Me V电子辐照实验.研究了铁电存储器不同工作方式、不同辐射源下的总剂量辐射损伤规律,用J-750测试部分直流参数和交流参数,分析了存储器敏感参数的变化规律.实验结果表明:对动态、静态加电、静态不加电三种工作方式下的结果进行比较.其中静态加电工作方式下产生的陷阱电荷最多,是存储器最恶劣的工作方式;器件的一些电参数随总剂量发生变化,在功能失效之前部分参数已经失效;在静态加电这种最恶劣的工作方式下,得到~(60)Co γ射线比电子造成更加严重的辐照损伤.     

A method of determining the charge trapped at the interfaces of a metal/ferroelectric/metal thin-film structure

A method is developed for determining the trap density at the metal/ferroelectric interfaces in a completely depleted ferroelectric film with two Schottky barriers. The method is based on the recharging of traps induced by an external pulsed bias. The ranges of the bias fields and of the parameters of the metal/ferro-electric/metal structure for which analytical solution of the Poisson equation is possible are found. Using this method and measurements of the transient current, the density of the charge trapped at the upper and lower interfaces of Pt(Ir)/PZT/Ir(Ti/SiO₂/Si) capacitors is determined. The interface charge as estimated from the trap density proved to be much smaller than the residual polarization of the PZT film. The observed correlation between the symmetry of the interface trap charges and the symmetry of the hysteresis loops and switching currents indicates the reliability of the estimation of the trap density determined using the proposed method.