两个3-甲基-2-乙酰吡嗪缩4-苯基氨基脲双核铜Ⅱ配合物的晶体结构及与DNA的相互作用

合成并通过单晶X射线衍射、元素分析及红外光谱表征了配合物[Cu₂（L）₂Cl₂]（1）和[Cu₂（L）₂（OAc）₂]（2）的结构（HL为3-甲基2-乙酰吡嗪缩4-苯基氨基脲）。单晶衍射结果表明,2个配合物中,每个拥有四方锥配位构型的Cu(Ⅱ)离子与来自1个阴离子配体L^-的N₂O电子供体和2个阴离子配位（1中为氯离子,2中为醋酸根离子）,其中1个阴离子为μ²桥联配位模式。荧光光谱结果表明,配合物与DNA的相互作用强于配体。     

浊点萃取-火焰原子吸收光谱法测定荔枝和桂圆肉中痕量铜

建立以二乙基二硫代氨基甲酸钠(DDT℃)为配位剂、TritonX-114为表面活性剂的浊点萃取-火焰原子吸收测定荔枝和桂圆肉中痕量铜的方法.研究了溶液pH值、配位剂类型与浓度、表面活性剂类型与浓度、平衡温度和平衡时间等实验条件对浊点萃取效率的影响.在最优的实验条件下,该方法测定铜的检出限为0.8μg/L,相对于传统火焰...     

由Lévy过程驱动的BSDE定义的一般非线性期望

本文研究了平凡可积随机变量的一类非线性期望f-期望.利用陈增敬推广g-期望的方法,扩张了f-期望的定义空间.     

机械合金化合成CoSb3过程中的固相反应机理的热力学解释

用Co和Sb作为初始原料，通过机械合金化(mechanical alloying, MA)的方法合成了CoSb₃,并系统研究了MA转速和MA时间对MA过程中固相反应的影响.XRD结果表明，相同MA转速下，CoSb₃的量随MA时间的延长而增多，但是MA时间过长会导致大量CoSb₂的生成，甚至诱发CoSb₃分解为CoSb₂和非晶态Sb.而提高MA转速，只能缩短固相反应的发生时间，而不会改变整个固相反应 关键词： 机械合金化 热电材料 3')" href="#">CoSb₃ 非平衡热力学     

蝌蚪图、△I=1/2增强及ε′/ε

本文分析标准模型中包括t及c夸克中间态的蝌蚪图对K~0→2π的振幅及ε′/s的贡献。结果表明它的贡献很可能是主要的。在对K~0波函数贡献的夸克相对动量割断取合理的数值时,它有可能给出足够的△l=1/2增强。不过,如果CP破坏全部起源于小林-益川相,得到的|ε′/s|偏大,或许可以假定ε主要起源于超弱CP破坏来克服这一困难。     

双圆盘上Hardy空间上Hankel 算子和Toeplitz 算子的交换性

In this paper, we characterize when the Toeplitz operator Tf and the Hankel operator Hg commute on the Hardy space of the bidisk. For certain types of bounded symbols f and g, we give a necessary and sufficient condition on the symbols to guarantee TfHg = HgTf.     

定解问题的可视化教学设计探讨

通过对一维弦振动的定解问题的计算机动态仿真,比较了不同定解条件下弦振动的视觉效果,讨论了相应的课外仿真设计.教学设计中突出了将传统的理论推导与计算机编程技术结合起来的教学思路,注重培养学生发现、分析和解决问题的兴趣和能力.     

High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

A novel super-junction lateral double-diffused metal-oxide semiconductor(SJ-LDMOS) with a partial lightly doped P pillar(PD) is proposed.Firstly,the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect.Secondly,the new electric field peak produced by the P/P-junction modulates the surface electric field distribution.Both of these result in a high breakdown voltage(BV).In addition,due to the same conduction paths,the specific on-resistance(R on,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS.Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20V/μm at a 15μm drift length,resulting in a BV of 300V.     

A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS

A novel low specific on-resistance(R on,sp) silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(pLDMOS) compatible with high voltage(HV) n-channel LDMOS(nLDMOS) is proposed.The pLDMOS is built in the N-type SOI layer with a buried P-type layer acting as a current conduction path in the on-state(BP SOI pLDMOS).Its superior compatibility with the HV nLDMOS and low voltage(LV) complementary metal-oxide semiconductor(CMOS) circuitry which are formed on the N-SOI layer can be obtained.In the off-state the P-buried layer built in the NSOI layer causes multiple depletion and electric field reshaping,leading to an enhanced(reduced) surface field(RESURF) effect.The proposed BP SOI pLDMOS achieves not only an improved breakdown voltage(BV) but also a significantly reduced Ron,sp.The BV of the BP SOI pLDMOS increases to 319 V from 215 V of the conventional SOI pLDMOS at the same half cell pitch of 25 μm,and R on,sp decreases from 157 mΩ·cm2 to 55 mΩ·cm2.Compared with the PW SOI pLDMOS,the BP SOI pLDMOS also reduces the R on,sp by 34% with almost the same BV.     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.