Bi2Te3拓扑绝缘体表面颗粒化铅膜诱导的超导邻近效应

拓扑绝缘体的出现为寻找拓扑超导体和Majorana费米子提供了一种可能的途径. 在拓扑绝缘体Bi₂Te₃表面沉积极薄的不连续铅膜, 试图通过邻近效应感应出大片的超导区, 为下一步研究拓扑超导电性创造条件.借助四引线电输运测量实验, 在0.25 K的低温下看到了超流现象, 表明沉积在Bi₂Te₃表面的厚度小于20 nm的颗粒化铅膜能够诱导邻近效应, 并且使大片Bi₂Te₃超导. 关键词： 超导邻近效应 S-N-S结 拓扑绝缘体     

高功率钕玻璃啁啾脉冲放大系统光谱整形

增益窄化效应限制了啁啾脉冲放大系统输出的最短脉冲宽度,需要对注入放大系统的种子啁啾脉冲进行光谱整形,以保证放大后的啁啾脉冲光具有足够的带宽并满足特定的光谱分布.理论上假定放大后啁啾脉冲的光谱分布为高斯分布或超高斯分布,对"百焦耳级钕玻璃啁啾脉冲放大系统"进行逆运算.研究发现,所需种子啁啾光的能量、带宽以及压缩后脉冲的信噪比都与该分布密切相关.通过光谱整形,使放大后的啁啾脉冲光的光谱分布为二阶超高斯分布.能够获得小于400 fs高信噪比的超短脉冲输出,此时所需种子啁啾脉冲能量仅为33μJ,带宽14 nm,在装置前级注入能力的范围之内.为百焦耳装置光谱整形实验的开展提供了理论指导.     

NdKYW新型全固体激光器研究

报道了采用半导体二极管抽运的掺钕钨酸钇钾［Nd3+KY(WO4)2］(简称NdKYW)蓝绿光激光器。腔内倍频采用了Ⅰ类临界相位匹配LBO(LiB3O5)晶体作为倍频器,阈值抽运功率为400 mW,在抽运功率为2 W时获得了200 mW的530 nm连续激光输出,其倍频光的光-光转换效率为10%。     

Establishment of Configuration with Optimized Current Profile in Pellet Fuelled Discharge on HL-2A

A sawtooth-free period is produced following the pellet injection in the pellet fuelled discharge of qa = 3.4 （where qa is the safety factor at the plasma boundary） in the HL-2A tokamak. Establishment of the current profile such as in the hybrid scenario is studied under the condition of pellet injection in HL-2A. It is shown that a q-profile of weak negative shear is produced immediately after the pellet injection, and it then evolves to a broad flat profile with q0 〉 1 （where qo is the safety factor at the centre）. The measured MHD mode structures evidence consistencies of the evaluated q-profile with locations of the q = 1 surface in the sawtoothing period and of the q = 2 surface in the sawtooth-free period. TRANSP analysis indicates that the energy confinement is enhanced substantially during and after pellet injection, which is resulted from the q-profile optimization and the plasma density peaking.     

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

ZnO homojunction light-emitting diodes are fabricated on Si（100） substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V. Distinct electrolumineseence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.     

浅谈《数术记遗》中的五行算和九宫算

<正>最近无事,对《数术记遗》进行了反复阅读,并对李培业老师的《数术记遗解释与研究》进行了学习,有了新的理解和发现。尤其对于《数术记遗》中的五行算和九宫算,有了新的理解和探索。下面谈一谈心得。原文:"五行算,以生兼生,生变无穷。"注文:"五行之法,水玄生数一,火赤生数二,木青生数三,金白生数四,土黄生数五,今为五行算。色别九枚,以五行色数相配为算之位。假令九亿八千七百六十五万四千三百二十一者,则以白算配黄为九亿,以青算     

Single Crystal Growth and Magnetoresistivity of Topological Semimetal CoSi

We report single crystal growth of CoSi, which has recently been recognized as a new type of topological semimetal hosting fourfold and sixfold degenerate nodes. The Shubnikov–de Haas quantum oscillation(QO) is observed on our crystals. There are two frequencies originating from almost isotropic bulk electron Fermi surfaces, in accordance with band structure calculations. The effective mass, scattering rate, and QO phase difference of the two frequencies are extracted and discussed.     

一维微分方程的多项式特解方法（英文）

本文对一维常微分算子及发展微分算子提出一种基于解析多项式特解(MPPS)的求解方法,通过使用这些特解公式,将微分方程的解显式表达为多项式特解的线性组合来求解复杂的微分方程,如可以使用这些公式来求解右端具有不连续驱动项的微分系统.文中给出一系列数值例子,数值模拟结果精度很高,而且误差非常稳定.