基于MEMS技术的多媒体空中鼠标

本文采用MEMS加速度传感技术,触控技术以及无线射频的多功能鼠标的电路设计方案,首先系统通过三轴陀螺仪和三轴加速度计的数据进行实时采集,将采集到的数据传送给STM32微控制器,用于计算鼠标的位移、角度、角速度等参数,并利用无线模块将数据发送到接收端,再通过USB协议发送到电脑端。针对现有空中无线鼠标通信距离、电池供电等问题的限制,本文采用通信距离更长的2.4GHZ无线电波,可循环充电利用的锂电池替代传统电池供电,并且利用USB设备通信,在接收端将大容量存储设备与鼠标设备整合复用,可实现二者之间的任意切换,提高了该鼠标系统适应实际应用环境的能力。     

空气有害气体监测演示系统

设计和制作了空气常见有害气体的监测演示实验系统,介绍了有害气体实时监测的原理和过程.实验结果表明:监测结果迅速、准确,并提供了友好的人机交互界面和报警系统.     

Crystal structure and ionic conductivity of Mg-doped apatite-type lanthanum silicates La10Si6-x Mgx O27-x（x=0–0.4）

Lanthanum silicates La10Si6-xMgxO27-x(x = 0–0.4) were prepared by solid state synthesis to investigate the effect of Mg doping on crystal structure and ionic conductivity. Rietveld analysis of the powder XRD patterns reveals that Mg substitution on Si site results in significant enlargement of channel triangles, favoring oxide-ion conduction. Furthermore,an increase of Mg concentration significantly influences the linear density of interstitial oxygen, which plays an important role in ionic conductivity. The Arrhenius plots of La10Si6-xMgxO27-x(x = 0–0.4) suggest that Mg-doped samples present higher conductivity and lower activation energy than non-doped La10Si6O27, and La10Si5.8Mg0.2O26.8exhibits the highest conductivity with a value of 3.0×10-2S ·cm-1at 700?C. Such conductive behavior agrees well with the refined results.The corresponding mechanism has been discussed in this paper.     

超声速转子叶片非定常引射器流场特性数值模拟

采用计算流体力学方法,结合适当的边界条件,对超声速转子叶片非定常引射器进行了模拟。从结果可以看出:此类引射器内流态复杂,主气流出口斜激波干扰现象明显,叶片设计参数对引射器性能影响很大。叶片尾部的膨胀波有效诱导了被引射气流,在短距离内增强了气流混合,湍流效应对引射器性能的影响较小;叶片可维持自旋转,提升叶片转速可增强引射效率。最后,对引射器内的流动机理进行了探讨。     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

由激光诱导荧光方法探测光碎片分子取向的理论研究

采用密度矩阵方法,推导了从激光诱导荧光(LIF)强度中抽出光碎片取向参数的表达式.光碎片的取向由分子态多极矩描述.用于解离母分子和激发碎片分子的激光均为线偏振光,而探测荧光为非偏振光.激光诱导荧光强度是光碎片分子初始态多极矩、线强度因子和解离-激发几何因子的函数.光碎片的取向参数可以由测量荧光偏振比和计算动力学因子而获得.     

普铝中Fe,Si元素的激光诱导击穿光谱测试条件及定量分析研究

为推广LIBS技术在电解铝行业中的应用，充分发挥其快速、免制样、多元素同时检测的优势。利用激光诱导击穿光谱技术首次对铝电解生产得到的普铝中Fe和Si元素进行测试研究，探索了合理的实验参数条件，在合理的实验条件基础上建立定标曲线并对普铝中Fe和Si元素进行定量分析，结合国标GB/T 7999-2015《铝及铝合金光电直读发射光谱分析方法》考察LIBS测试结果的准确性。以Nd∶YAG脉冲激光器基频1 064 nm激光作为光源激发等离子体，采用多通道光栅光谱仪和ICCD检测器检测、记录光谱信息。首先探测了LIBS光谱谱线，并对谱线进行了归属；综合分析，选取AlⅠ 266.04 nm，SiⅠ 288.15 nm与FeⅠ 259.92 nm作为分析谱线用于定量分析研究。分别研究了触发延迟时间、1Q延迟时间、激光器设定电压对光谱信号强度及信噪比SNR的影响。实验结果表明，触发延迟时间4 μs、1Q延迟时间170～190 μs、激光器设定电压560 V对于Si与Fe元素定量测试分析而言是较为合理的实验参数。根据谱线强度与元素浓度的关系，采用内标法建立了定标曲线，Si与Fe元素定标曲线中相关系数分别为0.919 72与0.952 11，其相对标准偏差（RSD）分别为7.25%与6.34%，说明谱线强度与元素浓度具有良好的线性关系，并基于此模型对12个样品进行了定量测试分析。将测试结果与光电直读发射光谱测得的结果进行比对，结果表明，Fe含量的相对误差绝对值在0~17.3%之间，Si含量相对误差绝对值在0~14.3%之间。依照国标GB/T 7999-2015《铝及铝合金光电直读发射光谱分析方法》中规定的实验室之间分析结果相对误差≤17%的规定，12个测试样品中，试样Si含量测试100%符合允许差要求，试样Fe含量测试91.7%符合允许差要求。该实验结果表明，LIBS技术在电解铝普铝Fe和Si元素检测中具有一定的推广利用价值。     

The influence of collision energy on magnetically tuned 6Li-6Li Feshbach resonance

The effect of collision energy on the magnetically tuned $^{6}$Li-$^{6}$Li Feshbach resonance (FR) is investigated theoretically by using the coupled-channel (CC) method for the collision energy ranging from 1 μ$ {\rm K} \cdot {k}_{\rm B}$ to 100 μ$ {\rm K} \cdot {k}_{\rm B}$. At the collision energy of 1 μ$ {\rm K} \cdot {k}_{\rm B}$, the resonance positions calculated are 543.152 Gs (s wave, the unit $1 {\rm Gs}=10^{-4} {\rm T}$), 185.109 Gs (p wave $|m_{l}| = 0$), and 185.113 Gs (p wave $|m_{l}| = 1$), respectively. The p-wave FR near 185 Gs exibits a doublet structure of 4 mGs, associated with dipole-dipole interaction. With the increase of the collision energy, it is found that the splitting width remains the same (4 mGs), and that the resonance positions of s and p waves are shifted to higher magnetic fields with the increase of collision energy. The variations of the other quantities including the resonance width and the amplitude of the total scattering section are also discussed in detail. The thermally averaged elastic rate coefficients at $T=10$, 15, 20, 25 K are calculated and compared.     

超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异

In_xGa_1-xAs缓冲层上生长In_yGa_1-yAs/GaAs超晶格（x＜y）．阱层处于压缩应变，垒层处于伸张应变，其厚度均小于Mathews-Blakeslee（M-B）平衡理论计算的临界厚度．透射电子显微镜及俄歇电子能谱、二级离子质谱测试发现，GaAs/In_yGa_1-yAs界面铟组分过渡区比In_yGa_1-yAs/GaAs界面铟组 关键词：