不同泵浦光下Nd:GdVO4晶体输出特性

为研究808 nm和879 nm两种泵浦光对Nd:GdVO4晶体激光输出特性的影响,并比较两种不同波长泵浦所得连续输出光的效率高低,分析了Nd:GdVO4晶体的能级结构和两种泵浦光作用下的激光输出特性,发现在879 nm也有较强的吸收峰.用808 nm和879 nm两种不同波长泵浦Nd:GdVO4晶体的过程是不同的,808 nm泵浦是一种间接方式能量转移的过程,在此过程中有明显的热负载产生.而879 nm泵浦是将粒子直接激励到激光辐射上能级,降低无辐射弛豫过程产生的热量.从理论上可知,879 nm的泵浦量子效率要高于808 nm的泵浦量子效率,对减少晶体的热产生有很强的优势.实验中采用激光二极管端面泵浦Nd:GdVO4晶体直腔方案,研究了两种不同泵浦光泵浦Nd:GdVO4晶体以获得1 063 nm的连续光,得到了两种光抽运时的斜效率,发现在同样实验条件下,879 nm泵浦的输出光斜效率在小功率泵浦时略高于808 nm|而在大功率泵浦的情况下明显高于808 nm,最高达到38%.同时,在808 nm抽运时,实验上获得了1 341 nm波长的激光,为光通讯的应用提供了一种光源.     

退压式La3Ga5SiO14晶体电光调Q Nd:YAG激光器激光性能研究

通过对硅酸镓镧(LGS)晶体旋光性与电光效应的交互作用的理论研究,推导出晶体旋光性和电光效应共同作用下的光强表示式I=1-4B2(Asin 2ω-Ccos 2ω)2.利用此表示式设计计算了旋光晶体LGS尺寸为8 mm×8 mm× 25 mm电光Q开关在1064 nm波长使用时的开关电压和偏振角分别为4995 V和27.3°.将理论研究得到的结论应用于LGS晶体电光调Q的Nd:YAG晶体激光器的实验研究中,实验结果与理论计算结果基本一致.得到输出能量为361 mJ,脉冲宽度为7.8 ns的脉冲激光输出.     

LD泵浦Nd∶LuVO_4/Cr~(4 )∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体,利用Cr4 ∶YAG晶体作为可饱和吸收元件,实现了1.06μm激光的被动调Q运转.在泵浦功率为19.1W时,获得最高平均输出功率为4.58W,脉冲宽度为84ns,单脉冲能量为36.6μJ以及峰值功率为436.2W的激光脉冲.     

Er~(3 ),Yb~(3 )∶YAl_3(BO_3)_4晶体的光谱性质研究

采用助熔剂法生长了Er3 ,Yb3 共掺的YAl3 (BO3 ) 4 晶体 ,测量了晶体的室温吸收谱。由此吸收谱 ,根据Judd Ofelt理论计算了Er3 在Er3 ,Yb3 ∶YAl3 (BO3 ) 4 晶体中的强度参数、自发辐射几率、积分发射截面等参数。强度参数为Ω2 =2 .4 4× 10 -2 0 cm2 、Ω4=2 .0 0× 10 -2 0 cm2 、Ω6=6 .10× 10 -2 0 cm2 。研究了晶体的荧光特性 ,并在 976nm激光泵浦下得到了上转换绿色荧光。     

Synthesis and characterization of axially periodic Zn2SnO4 dendritic nanostructures

Zn2SnO4 （ZTO） nanowires with a unique dendritic nanostructure were synthesized via a simple one-step thermal evaporation and condensation process. The morphology and microstructure of the ZTO nanodendrite have been investigated by means of field emission scanning electron microscopy （SEM）, x-ray diffraction （XRD） and high-resolution transmission electron microscopy （HRTEM）. SEM observation revealed the formation of branched nanostructures and showed that each branch exhibited a unique periodic structure formed by a row of overlaid rhombohedra of ZTO nanocrystals along the axis of the nanobranch. HRTEM studies displayed that the branches grew homoepitaxially as single-crystalline nanowires from the ZTO nanowire backbone. A possible growth model of the branched ZTO nanowires is discussed. To successfully prepare branched structures would provide an opportunity for both fundamental research and practical applications, such as three-dimensional nanoelectronics, and opto-electronic nanodevices.     

Diode-pumped self-starting mode-locked femtosecond Yb:YCa4O（BO3）3laser

A self-starting mode-locked femtosecond laser is accomplished with an oxoborate self-frequency doubling crystal Yb:YCa4O(BO3)3(Yb:YCOB) as the gain medium and a semiconductor mirror as the saturable absorber. Pumped by a976-nm fiber-coupled diode laser with 50-μm core diameter, stable mode-locked laser pulses up to 430 mW were obtained at a repetition rate of 83.61 MHz under 5-W pump power. The autocorrelation measurement shows that the pulse duration is as short as 150 fs by assuming the sech2pulse shape at a central wavelength of 1048 nm. This work has demonstrated a compact and reliable femtosecond laser source for prospective low-cost applications.     

提拉法制备铜单晶基片的化学机械抛光研究

采用提拉法成功制备出高纯铜(Cu)单晶,最大尺寸为φ15 mm×60 mm.采用化学机械抛光(CMP)方法对Cu单晶基片进行抛光,借助光学显微镜、表面轮廓仪和扫描探针显微镜分析了基片表面形貌、表面粗糙度与表面均匀性,并探讨了抛光压力、表面活性剂和抛光垫对基片表面抛光的影响,结果表明:采用CMP加工后的铜单晶基片表面无宏观划痕、加工均匀性好,基片表面粗糙度Ra为0.921 nm.     

铁电相Tb2（M0O4）3晶体的生长和缺陷研究

钼酸铽[Tb2（M0O4）3]是一种具有铁电、铁弹和顺磁等多种性质的功能晶体。采用提拉法,沿[001]方向生长了Ф25mm×20mm的铁电相Tb2（M0O4）3晶体。采用化学腐蚀法、扫描电子显微镜（SEN）观察了晶体中的缺陷,结果显示,晶体中的主要缺陷是位错、镶嵌物。高分辨X射线衍射（摇摆曲线）实验表明所生长的Tb2（M0O4）3晶体具有很好的晶格完整性。     

热屏位置对直拉硅单晶V/G、点缺陷和热应力影响的模拟

为了研究热屏位置对φ200 mm直拉硅单晶V/G、原生点缺陷浓度场以及热应力场的影响,使用CGSim有限元模拟软件进行了系统模拟.结果表明:热屏位置对硅单晶的V/G和原生点缺陷浓度的径向分布规律没有影响;较热屏至晶体侧表面距离相比,其底端至熔体表面距离的影响更大,即随着它的增加,V/G值沿径向普遍增大且由内向外变化程度增强,晶体心部高浓度空位区扩大,最大热应力减小.合理控制热屏底端至熔体表面的距离可有效改善晶体质量.     

Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation of Ⅴ/Ⅲ Ratio

High quality and highly conductive n-type Al0.7Ga0.3N films are obtained by using AlN multi-step layers （MSL） with periodical variation of Ⅴ/Ⅲ ratios by low-pressure metalorganic chemical vapour deposition （LP-MOCVD）. The full-width at half-maximum （FWHM） of （0002） and （1015） rocking curves of the Si-doped Al0.7Ga0.3N layer are 519 and 625 arcsec, respectively, Room temperature （RT） Hall measurement shows a free electron concentration of 2.9 × 10^19 cm^-3, and mobility of 17.8cm^2V^-1s^-1, corresponding to a resistivity of 0.0121 Ω cm. High conductivity of the Si-doped AlGaN film with such high Al mole fraction is mainly contributed by a remarkable reduction of threading dislocations （TDs） in AlGaN layer. The TD reducing mechanism in AlN MSL growth with periodical variation of Ⅴ/Ⅲ ratio is discussed in detail.