| Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation of Ⅴ/Ⅲ Ratio |
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| 引用本文： | 张洁,郭丽伟,邢志刚,葛炳辉,丁国建,彭铭曾,贾海强,周均铭,陈弘.Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation of Ⅴ/Ⅲ Ratio[J].中国物理快报,2008,25(12):4449-4452. |
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| 作者姓名： | 张洁 郭丽伟 邢志刚 葛炳辉 丁国建 彭铭曾 贾海强 周均铭 陈弘 |
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| 作者单位： | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 10574148, the National High-Tech Research and Development Programme of China under Grant Nos 2006AA03A106 and 2006AA03A107, and the National Basic Research Programme of China under Grant No 2006CB921300. |
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| 摘 要： | High quality and highly conductive n-type Al0.7Ga0.3N films are obtained by using AlN multi-step layers （MSL） with periodical variation of Ⅴ/Ⅲ ratios by low-pressure metalorganic chemical vapour deposition （LP-MOCVD）. The full-width at half-maximum （FWHM） of （0002） and （1015） rocking curves of the Si-doped Al0.7Ga0.3N layer are 519 and 625 arcsec, respectively, Room temperature （RT） Hall measurement shows a free electron concentration of 2.9 × 10^19 cm^-3, and mobility of 17.8cm^2V^-1s^-1, corresponding to a resistivity of 0.0121 Ω cm. High conductivity of the Si-doped AlGaN film with such high Al mole fraction is mainly contributed by a remarkable reduction of threading dislocations （TDs） in AlGaN layer. The TD reducing mechanism in AlN MSL growth with periodical variation of Ⅴ/Ⅲ ratio is discussed in detail.
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| 关 键 词： | 薄膜 结构 物理学 研究 |
| 收稿时间： | 2008-6-3 |
Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation of V / III Ratio |
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| ZHANG Jie,GUO Li-Wei,XING Zhi-Gang,GE Bing-Hui,DING Guo-Jian,PENG Ming-Zeng,JIA Hai-Qiang,ZHOU Jun-Ming,CHEN Hong.Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation of V / III Ratio[J].Chinese Physics Letters,2008,25(12):4449-4452. |
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| Authors: | ZHANG Jie GUO Li-Wei XING Zhi-Gang GE Bing-Hui DING Guo-Jian PENG Ming-Zeng JIA Hai-Qiang ZHOU Jun-Ming CHEN Hong |
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| Institution: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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| Abstract: | |
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| Keywords: | 81 05 Ea 81 15 Gh 61 05 Cp |
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