On a Moving Boundary Solution to the Fokker-Planck Equation for Particle Transport in Turbulent Flows with Absorbing Boundaries

A Fokker—Planck equation describing the transport of particlesin turbulent flows is considered. The initial value problemwith perfectly absorbing boundary conditions on the wall issolved by introducing a characteristic line in phase space.It is found that the solution domain in phase space decomposesinto three regions which are connected by two moving boundaries,and the moving boundaries can be found explicitly. For Gaussian-typeinitial conditions, the solution of the Fokker—Planckequation can be obtained in each of the three regions by solvinga diffusion equation. An approximation procedure for the generalinitial value problem is established and the approximate solutionsequence is shown to be convergent in a certain Hilbert space.     

The Crystal Structure of Isosteviol

The title compound was prepared and its crystal structure was determined using X-ray crystallographic method. The crystal is orthorhombic, space group is P212121 with a= 1. 1114(2) nm, b=1.7677(3) nm, c=1.8312(3) nm; Z=8. The geometric structure and conformation of the title compound obtained by MMX molecular mechanics calculation are in agreement with those obtained from X-ray determination.     

光阴极电子枪中金属光阴极的热发射度研究

对光阴极电子注入器中金属光阴极的热发射度进行了理论研究.金属光阴极的热发射度由两部分构成.一方面对于理想平坦的阴极,光电子穿越表面势垒后有一定的残余动能,造成一定的热发射度,这部分前人已经做过一些理论研究.本文改进已有的模型,进一步给出了理想平坦光阴极的热发射度.另一方面,阴极表面的粗糙度将造成热发射度的增加,本文首次解析地分析了表面粗糙度对光阴极电子枪热发射度的影响,得到表面粗糙度造成的热发射度的估计公式.本文对金刚石车削后的铜、镁的表面形貌进行了测量,表明粗糙度造成的热发射度大约0.4mm·mrad.本文的热发射度理论能够较好的解释目前国际上铜、镁阴极的热发射度的测量结果.     

3S1态电子偶素3γ衰变的γ射线能谱测量

用具有时间选择功能的高纯锗γ能谱仪测量了³S₁态电子偶素3γ衰变放出的连续γ能谱的300—510keV能区。结果表明,在实验误差范围内与量子电动力学理论曲线一致。 关键词：     

Studies on Silicon-Containing Fragrance Raw Materials (Ⅳ)——Synthesis of Spiro-Acetals of 5-Trimethylsilylcyclohex- 2- (or 3)enone

Some novel spiro-acetals of 5-trimethylsilylcyclohex-2(or 3)-enone were synthesized from the reaction of silylcyclohexenones with the corresponding a, ω-diols in the presence of oxalic acid or adipic acid.     

CRYSTAL STRUCTURE INVESTIGATION OF VANADYL COMPLEXES OF TRIDENTATE LIGAND (Ⅰ)——THE CRYSTAL STRUCTURES OF BIS[(1-(2,4-PENTANE- DIONATO(NITROBENZOYL) HYDRAZONE)-2- ETHOXY)OXOVANADIUM] AND BIS-[(1-(2, 4-PENTANEDIONATO-(3-NITROBENZOYL) HYDRAZONE)-2- METHO

The title complexes were obtained by the reactions of bis(2,4-pentanedionato)oxovanadium VO(Acac)_2 and m-nitrophenylhydrazide m-NO_2PhCONHNH_2 in the media EtOH and MeOH respectively. The compound (Ⅰ) crystallizes in the space group PT with unit cell dimensions a=8.123(2), b=10.409(5), c=10.822(4), α=65.78(3)°, β=85.50(3)°,γ=89.04(3)°. The compound (Ⅱ) crystallizes in the space group P2_1/a with unit cell dimensions a=7.745(2), b=19.164(5), c=10.787(4), β=107.87(2)°. The resuhs of structural analyses show that the two compounds have the same characteristics: the tridentate ligand formed by condensation occupies three of the four equatorial positions of vanadium and the rest equatorial position is occupied by alkoxy group RO~-. As RO~-group also bridges the sixth coordinated position of each vanadium atom, it brings about the formation of the new type binuclear complexes of vanadium.     

Fe-Cr-Co永磁合金的高温X射线衍射研究

本文用高温X射线粉末衍射法研究了成分为(重量百分比)62Fe-23Cr-15Co的可加工永磁合金热处理条件与晶体结构的关系。对高温淬火后只经过时效的样品,以及经过淬火、磁场热处理和时效的样品摄取了高温德拜·谢乐相,观察了高温相变的差异,测量了时效样品点阵常数随温度的变化。我们发现:只经过淬火和时效的样品在610℃左右出现一新的过渡相(X相)。 关键词：     

GaP(N,Te,Zn)的静压光致荧光研究

对GaP(N,Te,Zn)样品做了77K的静压光致荧光研究。得到了N,NN₁,NN₃束缚激子能级的压力系数,以及施主Te和中性施主Te的束缚激子能级的压力系数。讨论了这些能级随压力的变化行为,并首次观察到Gap中自由激子的零声子发射。 关键词：     

表面复合速度对于锗的光电导光谱分布的影响(二)

The continuity equation of minority carriers in n-type germanium is solved for the stationary case, in which the volume recombination is assumed to be of the recombination-center type and the surface recombination is introduced in the boundary condition. An expression for the photoconductivity is obtained from this solution.By substituting the known absorption data and the volume lifetime of minority carrier in the sample into the expression of photoconductivity and by choosing suitable values of surface recombination velocity, photoconductive spectra are calculated and are compared with the experimental curves. The agreement is satisfactory for wave-lengths greater than 1.2 μ. Below 1.2 μ, the experimental curves fall well below the calculated curves. It is thought that other types of volume recombination may exist.The photoconductive spectra usually have a maximum outside the absorption edge. By measuring the relative height of the maximum, the surface recombination velocity can be obtained. This method is suitable for medium and large values of surface recombination velocity.The photoconductivity drops sharply on both sides of the maximum in case of large values of recombination velocity. In such cases, the energy gap of the semiconductor can be obtained in a simple way. For germanium the energy gap is 0.83 eV for direct transition and 0.635 eV for indirect transition.From this investigation, the energy gap of CdS is reestimated to be 2.53 eV and that of Cu₂O greater than 2.10 eV.