电氧化甲酸反应体系的随机共振调制

采用甲酸电氧化的反应模型对随机共振的调制进行了研究。反应模型中有驱动电流和CO的饱和覆盖率两个控制参量。当弱信号和噪声同时作用于驱动电流时,固定信号强度,体系输出的脉冲间隔分布可以在合适的噪声强度时最有序,表明出现了随机共振现象。对CO的饱和覆盖率施加周期性信号的作用可以对随机共振行为进行调制,调制的结果取决于调制信号的周期及初相位。     

藏药胡芦巴种籽油脂类成分的GC-MS分析

采用GC-MS法对青海产的胡芦巴油脂类化学成分进行了分析,并以面积归一法测其质量分数。共鉴定出41种化学成分,其中34种为该植物种籽中首次得到。实验中,首先采用三氟化硼-甲醇体系对胡芦巴油进行甲酯化,使酯化更完全,测定效果更好。     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

阻抗谱法确定扩散系数

给出了阻抗谱法确定扩散系数的理论和方法;以钒酸盐阴极材料Na_(1+x)V_3O_(?)(L.T.)为例,应用本方法计算给出了Li~+在阴极中的扩散系数为10~(?)-10~(-9)cm~2·s~(-1);最后还对误差来源进行了讨论. 关键词：     

EFFECTS OF BANDGAP SHRINKAGE IN FEMTOSECOND ABSORPTION SATURATION MEASUREMENTS OF GaAs FILM

Using CPM dye laser and self-mode-locked Ti sapphire laser as pump-probe optical sources, the effects of bandfilling and bandgap shrinkage on the femtosecond absorption saturation spectra of GaAs film have been studied, For exciting photon energy of 1.97eV and carrier density of 1×10¹⁸cm^-3, an optical-induced absorption increase is observed and is attributed to bandgap shrinkage, The dependence of the absorption coefficient change on the carrier temperature and the carrier densities is discussed.     

Cu（OAc）2/Pyrimidines-Catalyzed Cross-coupling Reactions of Aryl Iodides and Activated Aryl Bromides with Alkynes under Aerobic, Solvent-free and Palladium-free Conditions

Excellent results have been achieved in the Cu（OAc）2-catalyzed Sonogashira cross-couplings of aryl iodides and activated aryl bromides utilizing TBAF （tetrabutylammonium fluoride） as the base and 4,6-dimethoxypyrimidin-2-amine as the ligand. It is noteworthy that the reaction is conducted under aerobic, solvent-free and palladium-free conditions.     

半导体碳化硅湿法腐蚀工艺研究

碳化硅(SiC)具有禁带宽度大、电子饱和漂移速度高、击穿场强高、热导率高、化学稳定性好等优异特性,是制备高性能功率器件等半导体器件的理想材料。得益于工艺简单、操作便捷、设备要求低等优点,湿法腐蚀已作为晶体缺陷分析、表面改性的常规工艺手段,应用到了SiC晶体生长和加工中的质量检测以及SiC器件制造。根据腐蚀机制不同,湿法腐蚀可以分为电化学腐蚀和化学腐蚀。本文综述了不同湿法腐蚀工艺的腐蚀机理、腐蚀装置和应用领域,并展望了SiC湿法腐蚀工艺的发展前景。     

AC Alternating-Current Loss Analyses of a Thin High-Temperature Superconducting Tube Carrying AC Transport Current in AC External Magnetic Field

Numerical simulations on the AC loss characteristics in a thin high-temperature superconducting （HTS） tube are presented. Geometry of the HTS conductor is modeled as a tube with negligible thickness, and assumed to carry a transport current with the same phase as an AC externally applied magnetic field perpendicular to the axis. Based on the classical theory of AC loss with the Bean critical current model, the distribution of critical current density jc and AC loss Q are obtained by means of numerical analysis. The results are in very good agreement with experiments. A double-peak profile is observed in the curve of the critical current density distribution along the azimuth angle. This numerical simulation method is suitable for a thin HTS tube, which may be applicable on a thin tube configuration consisting of coated superconductors.     

C_2H_2,C_2H_4与K在Ru(100)表面上共吸附的UPS研究

利用紫外光电子谱 (UPS)对乙烯 (C2 H4)和乙炔 (C2 H2 )气体在Ru(10 10 )表面的吸附及与K的共吸附进行了研究 ,实验结果表明 :当衬底温度超过 2 0 0K ,乙烯即发生脱氢反应后 ,σCH 和σCC 能级均向高结合能方向移动 .在室温下 ,σCH和σCC 能级位置与乙炔在Ru(10 10 )表面的吸附时的分子能级完全一致 .乙烯发生脱氢反应后的主要产物为乙炔 .衬底温度从 12 0K升到室温 ,Ru(10 10 )表面上乙炔的σCH 和σCC 能级均未发现变化 .室温下乙炔仍然可以在Ru(10 10 )表面以分子状态稳定吸附 .在有K的Ru(10 10 )表面上 ,室温时σCC谱峰几乎消失 .碱金属K的存在促进了乙炔的分解 .     

ZnO压敏陶瓷中组分工艺对Znï本征缺陷的影响

用导纳谱法,测量ZnO压敏陶瓷中Schottky势垒区的陷阱能级,研究组分、制备工艺对二价填隙锌离子Znï本征缺陷的影响.结果表明,ZnO压敏陶瓷中由于添加剂的多元化,导致制备过程中组分之间反应增强,从而形成本征缺陷的趋向也随之增强;其中那些能分凝于晶界的Bi,Ba添加剂,则对Znï的形成有抑制作用;而过高的退火处理温度,则大大地促进Znï的形成.