主链含PEO链段的聚对苯乙炔类蓝色电致发光共聚物

采用Ｗｉｔｔｉｇ反应合成了一种分子主链上烷氧基取代刚性共轭聚对苯乙炔（ＰＰＶ）民柔性聚氧化乙烯（ＰＥＯ）链段交替排列的、可溶于氯仿与四氢呋喃等普通有机溶剂的新型结构的聚对苯乙炔类功能性发光共聚物ＥＯ－ＰＰＶ。采用ＦＴ－ＩＲ、＾１Ｈ－ＮＭＲ、ＤＳＣ、ＧＰＣ、元素分析等手段对共聚物进行了表征,并制备了结构为（Ａｌ）Ｃａ／ＥＯ－ＰＰＶ／ＩＴＯ的单层电致发光器件、器件的最大发光波长位于４７５ｎｍ（蓝光）。     

主链含电子传输型团的可溶性PPV聚合物载流子传输特性研究

合成了一种聚苯撑乙烯撑(PPV)主链上含有电子传输基团的新型结构电子聚合物(O-PPV).该低聚物的M_w=1000,T_g=197℃,可溶于氯仿和四氢呋喃.单层O-PPV器件的发光效率约为单层PPV器件的5～8倍.进一步构造了结构为空穴传输特性材料/O-PPV和O-PPV/电子传输特性材料的双层器件来研究O-PPV的载流子传输特性,实验结果表明,O-PPV是一种具有明显两性载流子传输的特性材料.     

聚对苯乙炔-噻吩共轭聚合物电致发光性能的研究

1990年剑桥大学的Ｂｕｒｒｏｎｇｈｅｓ[1] 等首次提出用共轭高分子聚 (苯乙撑 ) (ＰＰＶ)为发光层材料制备了聚合物电致发光器件 ,不久Ｈｅｅｇｅｒ[2 ] 等证实了这个结果 ,随后发光聚合物的研究在世界范围内广泛开展起来 ,ＰＰＶ目前已被证实是一个潜在的电致发光材料[3 ] .共轭聚合物用于电致发光有以下特点 :( 1 )可通过旋涂、浇铸等方法制成大面积薄膜 ;( 2 )共轭聚合物大多有优良的稳定性 ;( 3)共轭聚合物电子结构 ,发光颜色能够通过化学结构的改变和修饰进行调节 ;( 4 )聚合物做发光层时可制成非常薄的膜 ( 1 0～ 1 0 0ｎｍ) ,可消除…     

去卤缩聚法合成蓝色电致发光聚合物聚（2,5—二庚基）对苯乙炔

利用双卤甲基苯衍生物在强碱诱导下的缩合反应，合成了共轭态可溶的聚对苯乙炔，并利用ＩＲ，ＵＶ－Ｖｉｓ，＾１Ｈ－ＮＭＲ，ＴＧＡ等对聚合物结构与性能进行了有征，其Ｎｎ＝０．４８×１０＾４。电致发光器件的发光峰值波长为４８６ｎｍ，起亮电压为２２Ｖ。     

聚(2-甲氧基-5-壬氧基)对苯乙炔的合成及其电致发光性质

以对甲氧基苯酚和溴代正壬烷为原料,通过醚化、氯甲基化和脱氯化氢反应得到可溶性的聚（２－甲氧基－５－壬氧基）对苯乙炔,以其为发光层装配了聚合物单层电致发光器件,研究了它的电致发光和光致发光性质;电致发光器件具有良好的稳定性,其起亮电压为７Ｖ。聚合物的结构由ＩＲ、＾１Ｈ－ＮＭＲ及ＵＶ／Ｖｉｓ光谱得到确认。     

可溶性聚对苯乙炔的合成及其电致发光性能

采用紫外－可见光谱跟踪用直接聚合法制备可溶性的聚对苯乙炔衍生物的反应过程,结果表明反应仍然经历了生成前聚物的过程。控制反应条件使聚合反应首先生成前聚物,在前聚物烯化反应阶段加入起增溶作用的长链醇,得到了具有良好的溶解性的、主链中含非共轭链段的聚对苯乙炔衍生物。用该聚合物制备的电致发光器件,在５－６Ｖ电压驱动下发光,发光峰位于５８０ｎｍ左右。     

三乙四胺六乙酸镥配合物的合成与结构

在水溶液中合成了｛［Ｌｕ２（ｔｔｈａ）（Ｈ２Ｏ）６Ｌｕ２（ｔｔｈａ）（Ｈ２Ｏ）４］·２１Ｈ２Ｏ｝ｎ , 通过Ｘ 射线衍射确定其晶体结构。该配合物为一无限链状结构, 三斜晶系, 空间群Ｐ１ , 单胞参数ａ ＝ １－０９７８７（７） ｎｍ , ｂ＝１－２７６０３（１０） ｎｍ , ｃ ＝ １－４５９０３（１０） ｎｍ , α３ ＝ ７５－７６９（６）°, β＝ ８５－２８８（５） , γ＝７１－５７７（６）°, Ｖ＝ １－８７９７（２） ｎｍ３ ． Ｚ＝ １ , Ｄｃ ＝ １－９７５ ｇ／ｃｍ３ ． Ｆ（０００） ＝ １１０６ , μ＝ ５－３１２ ｎｍ － １ ,Ｒ１ ＝ ０－０２３９ ,ｗ Ｒ２ ＝ ０－０５２７ 。     

含空穴传输和电子注入基的发光化合物的制备

对电致发光材料及器件(ELDs)发光性能的优化,一个重要的途径是在材料的组合中,要既具有空穴传输功能团,又具有电子注入功能团,并使两者的传输效率应尽量达到一个恰当的平衡,提高载流子传输中空穴与电子的复合几率,降低驱动电压,提高激子的发生几率,并对发光材料的发光区域进行控制[1].为此,在电致发光材料的分子设计及合成上,常需提供分子中含有空穴传输功能基团和分子中含有电子注入功能基团的有机分子,作为构筑电致发光器件的材料化合物,或将这两种功能团纳入到一个有机分子或高分子中.     

聚芴类电致发光材料*

聚芴与其衍生物是一类重要的电致发光聚合物,它们具有较高的光致发光效率,并且易于进行结构修饰,因此受到材料化学家们的高度关注。本文叙述的线索是聚合物结构与其电致发光性能之间的构效关系。通过化学修饰,可以调节材料的前线分子轨道、热和光谱稳定性,进而开发新的发光材料。文中首先简单介绍了聚芴类发光材料的聚合方法,然后把这些聚合物按结构不同分成两个部分介绍：一部分是主链仅含有共轭芴单元的聚合物,它们的化学修饰依赖于芴9位的活性碳原子;另一部分是通过共聚方法得到的主链含有芴和其它基团的聚合物。     

α,ω-双(4-(4′-甲基)-偶氮苯基)苯氧甲基-1,1,3,3-四甲基二硅氧烷的合成和结构

合成了（ＣＨ３（Ｃ６Ｈ４）Ｎ２（Ｃ６Ｈ４）ＯＣＨ２Ｓｉ（ＣＨ３）２２Ｏ,对其晶体结构及分子偶极矩进行了研究．结果表明,晶体属单斜晶系,Ｉ２Ａ空间群,晶胞参数如下：ａ＝２．１７８３４ｎｍ,ｂ＝０．８０３２５ｎｍ,ｃ＝２．０８８９５ｎｍ,β＝１１９．１９１°,Ｖ＝３１８２６ｎｍ３,Ｚ＝４,Ｄｃ＝１．２１６ｋｇ／ｍ３．分子偶极矩μ＝８．９３２×１０－３０Ｃ·ｍ．通过对分子结构和矩值的分析,说明了由刚性基团和柔性基团组成的端介晶基四甲基二硅氧烷的性能与结构之间的关系．     

Synthesis and electroluminescent properties of naphthalimide derivatives

Naphthalimide derivatives, N-ethyl-4-acetylamino-l ,8-naphthalimide (EAAN) and polymer with N-propyl-4-acetylamino-l,8-naphthalimide (PAAN) side-chain (P-PAAN) were successfully synthesized. Electroluminescent devices of ITO/PVK(120nm)/EAAN(50nm)/Al(150nm) (Ⅰ) and ITO/PVK P-PAAN( 10:1) (50nm)/Al(150nm) (Ⅱ) constructed with EAAN and P-PAAN as the emitting layer were investigated, whereas the single-layer devices of ITO/EAAN or P-PAAN(50nm)/Al(l50nm) (Ⅲ) were not observed to have any e-mission light. The emission results revealed that the exciton recombination formed by positive and negative charge carriers injected from electrodes of devices Ⅰ and Ⅱ was much more balanced than that of devices Ⅲ, which implied that naphthalimide derivatives are a new type of electron-transporting materials with high performance. The electron-transporting properties of naphthalimide derivatives were also elucidated by investigation of the electroluminescent behaviors from both devices of ITO/PPV (80nm)/Al and ITO/P     

可溶性聚合物电致发光材料PDHPV的合成及单、双层发光二极管器件的发光性能比较

可溶性聚合物电致发光材料ＰＤＨＰＶ的合成及单、双层发光二极管器件的发光性能比较李晨曦，尹春，黄文强，印寿根，张会旗，何炳林，郑军，华玉林（南开大学高分子化学研究所，天津，３０００７１）（天津理工学院材料物理研究所）关键词ＰＤＨＰＶ共轭聚合物；电致发光...     

聚合物薄膜交流电致发光器件

We have demonstrated an electroluminescent (EL) device having the structure of ITO/PPV/Alq3:PVK/Al. This device could be driven by either forward bias or backward bias, and its EL originated from PPV layer.     

超薄层在白色有机电致发光器件中的应用

以DCJTB为掺杂剂, 以BCP为空穴阻挡层, 研究了两种结构的有机电致发光器件ITO/NPB/BCP/Alq3:DCJTB/Alq3/Al(结构A)和ITO/NPB/BCP/Alq3/Alq3:DCJTB/Alq3/Al(结构B)的电致发光光谱. 实验结果显示, 在结构A器件的电致发光光谱中, 绿光的相对发光强度较弱,增加Alq3层的厚度对绿光的相对发光强度的影响也很小; 而在结构B器件的电致发光光谱中, BCP层与掺杂层(Alq3:DCJTB)之间的Alq3薄层对绿光的相对发光强度影响显著, 用很薄的Alq3层就可以得到强的绿光发射. 进一步改变器件结构, 利用有机超薄层就可以得到稳定的白光器件ITO/NPB(50 nm)/BCP(3 nm)/Alq3(3 nm)/Alq3:DCJTB(1%(w))(5 nm)/Alq3(7 nm)/Al. 随着电压的增加(14-18 V), 该器件的色坐标基本保持在(0.33, 0.37)处不动; 在432 mA·cm-2的电流密度下, 该器件的发光亮度可达11521 cd·m-2.     

吡唑啉衍生物作为空穴传输层在电致发光材料中的应用

我们曾报道过有关1,3二苯基吡唑啉衍生物的光谱和光物理行为^[1,2],并详细地研究了它们在受激发后的辐射和非辐射衰变过程.该类化合物作为一种良好的光致发光材料,由于存在着分子内共轭的电荷转移结构,因此表现出较强的光诱导分子极化能力,可用作为有机非线性光学材料^[3]、光折变材料等.此外,还发现该类化合物在组合型光导器件中可用作空穴传输层材料.既然这类化合物兼具光致发光和空穴传输功能,很自然的会考虑到,它是否也能用作为一种有机的电致发光(EL)材料.有机电致发光材料的重要性自不待言,特别近年来许多科学家致力于此,因此进展很快.但寻找新的高效材料,不论是用作主要的发光层或其它的辅助性化合物,仍在继续.本简报即是对上述化合物用作EL材料的初步研究.     

Optimization of high-performance blue organic light-emitting diodes containing tetraphenylsilane molecular glass materials

Molecular glass material (4-(5-(4-(diphenylamino)phenyl)-2-oxadiazolyl)phenyl)triphenylsilane (Ph(3)Si(PhTPAOXD)) was used as the blue light-emitting material in the fabrication of high-performance organic light-emitting diodes (OLEDs). In the optimization of performance, five types of OLEDs were constructed from Ph(3)Si(PhTPAOXD): device I, ITO/NPB/Ph(3)Si(PhTPAOXD)/Alq(3)/Mg:Ag, where NPB and Alq(3) are 1,4-bis(1-naphylphenylamino)biphenyl and tris(8-hydroxyquinoline)aluminum, respectively; device II, ITO/NPB/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag, where TPBI is 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene; device III, ITO/Ph(2)Si(Ph(NPA)(2))(2)/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag, where Ph(2)Si(Ph(NPA)(2))(2) is bis(3,5-bis(1-naphylphenylamino)phenyl)-diphenylsilane, a newly synthesized tetraphenylsilane-containing triarylamine as hole-transporting material; device IV, ITO/Ph(2)Si(Ph(NPA)(2))(2)/NPB/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag; device V, ITO/CuPc/NPB /Ph(3)Si(PhTPAOXD)/Alq(3)/LiF/Al, where CuPc is Cu(II) phthalocyanine. Device performances, including blue color purity, electroluminescence (EL) intensity, current density, and efficiency, vary drastically by changing the device thickness (100-600 A of the light-emitting layer) and materials for hole-transporting layer (NPB and/or Ph(2)Si(Ph(NPA)(2))(2)) or electron-transporting material (Alq(3) or TPBI). One of the superior OLEDs is device IV, showing maximum EL near 19 000 cd/m(2) with relatively low current density of 674 mA/cm(2) (or near 3000 cd/m(2) at 100 mA/cm(2)) and high external quantum efficiency of 2.4% (1.1 lm/W or 3.1 cd/A). The device possesses good blue color purity with EL emission maximum (lambda(max)(EL)) at 460 nm, corresponding to (0.16, 0.18) of blue color chromaticity on CIE coordinates. In addition, the device is reasonably stable and sustains heating over 100 degrees C with no loss of luminance on the basis of the annealing data for device V. Formation of the exciplex at the interface of NPB and Ph(3)Si(PhTPAOXD) layers is verified by EL and photoluminescence (PL) spectra studies on the devices with a combination of different charge transporting materials. The EL due to the exciplex (lambda(max)(EL) at 490-510 nm) can be properly avoided by using a 200 A layer of Ph(3)Si(PhTPAOXD) in device I, which limits the charge-recombination zone away from the interface area.     

方酸作桥联配体的双核铕螯合物的电致发光

利用方酸作为桥联配体合成了一种双核铕鳌合物Eu_2（DBM）_4（Sq）Phen_2 ．用TPD作空穴传输材料、Eu_2（DBM）_4（Sq）Phen_2作发光材料和载流子传输材料、 8-羟基喹啉和铝（AlQ）作电子传输材料，设计了不同电致发光电特性，结果表明 Eu_2（DBM）_4（Sq）phen_2是一种同时具有空穴和电子传输能力的红色电致发光 材料，在器件结构为ITO/TPD,50nm/Eu_2（DBM）_4（Sq）Phen2，20nm/ALQ，50nm/LiF， 1nm/Al,200nm时，获得了在16V,6.9mA下有最大亮度91cd／m~2的电致发光器件.     

Synthesis and electrochemical and electroluminescent properties of N‐phenylcarbazole‐substituted poly(p‐phenylenevinylene)

An N‐phenylcarbazole‐containing poly(p‐phenylenevinylene) (PPV), poly[(2‐(4′‐carbazol‐9‐yl‐phenyl)‐5‐octyloxy‐1,4‐phenylenevinylene)‐alt‐(2‐(2′‐ethylhexyloxy)‐5‐methoxy‐1,4‐phenylenevinylene)] (Cz‐PPV), was synthesized, and its optical, electrochemical, and electroluminescent properties were studied. The molecular structures of the key intermediates, the carbazole‐containing boronic ester and the dialdehyde monomer, were crystallographically characterized. The polymer was soluble in common organic solvents and exhibited good thermal stability with a 5% weight loss at temperatures above 420 °C in nitrogen. A cyclic voltammogram showed the oxidation peak potentials of both the pendant carbazole group and the PPV main chain, indicating that the hole‐injection ability of the polymer would be improved by the introduction of the carbazole‐functional group. A single‐layer light‐emitting diode (LED) with a simple configuration of indium tin oxide (ITO)/Cz‐PPV (80 nm)/Ca/Al exhibited a bright yellow emission with a brightness of 1560 cd/m² at a bias of 11 V and a current density of 565 mA/cm². A double‐layer LED device with the configuration of ITO/poly(3,4‐ethylenedioxy‐2,5‐thiophene):poly (styrenesulfonic acid) (60 nm)/Cz‐PPV (80 nm)/Ca/Al gave a low turn‐on voltage at 3 V and a maximum brightness of 6600 cd/m² at a bias of 8 V. The maximum electroluminescent efficiency corresponding to the double‐layer device was 1.15 cd/A, 0.42 lm/W, and 0.5%. The desired electroluminescence results demonstrated that the incorporation of hole‐transporting functional groups into the PPVs was effective for enhancing the electroluminescent performance. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 5765–5773, 2005     

Organic electroluminescent device based on electropolymerized polybithiophene as the hole-transport layer

An ultrathin film of polybithiophene (PBTh), used in organic electroluminescent (EL) devices, was generated by an electrochemical method with a conducting indium tin oxide (ITO) glass as the working electrode. The light-emitting layer could be deposited directly onto the PBTh by using spin coating for fabrication of the organic EL devices. It was found that the film of PBTh as the hole-transport layer for the EL device could effectively raise the EL intensity and efficiency. The EL intensity of the ITO/PBTh/emitting layer/Al device is about 100 times as strong as that of the ITO/emitting layer/Al device at the same current density of 50 mA/cm².