本征导电聚合物的智能性

在化学掺杂或电化学掺杂过程中，性质发生可逆性变化的本征导电聚合物是一种潜在的智能材料，可望实现或部分实现传感、处理和执竽功能，适于制成电机执行器、智能窗、化学分离与释放体系、传感器和非线性光学器件等。     

形状记忆高分子材料

作为一种新型的功能材料,形状记忆高分子不仅具有形变量大、赋形容易、形状恢复温度便于调整、加工方便的优点,而且种类丰富、质轻价廉.按形状记忆的方式,它可分为热致感应型、光致感应型和化学物质感应型等,能满足不同的应用需求.     

Synthesis and electroluminescent properties of naphthalimide derivatives

Naphthalimide derivatives, N-ethyl-4-acetylamino-l ,8-naphthalimide (EAAN) and polymer with N-propyl-4-acetylamino-l,8-naphthalimide (PAAN) side-chain (P-PAAN) were successfully synthesized. Electroluminescent devices of ITO/PVK(120nm)/EAAN(50nm)/Al(150nm) (Ⅰ) and ITO/PVK P-PAAN( 10:1) (50nm)/Al(150nm) (Ⅱ) constructed with EAAN and P-PAAN as the emitting layer were investigated, whereas the single-layer devices of ITO/EAAN or P-PAAN(50nm)/Al(l50nm) (Ⅲ) were not observed to have any e-mission light. The emission results revealed that the exciton recombination formed by positive and negative charge carriers injected from electrodes of devices Ⅰ and Ⅱ was much more balanced than that of devices Ⅲ, which implied that naphthalimide derivatives are a new type of electron-transporting materials with high performance. The electron-transporting properties of naphthalimide derivatives were also elucidated by investigation of the electroluminescent behaviors from both devices of ITO/PPV (80nm)/Al and ITO/P     

介观结构SiO2/CdO纳米复合物为前驱体原位水热合成半导体CdSe和CdS纳米晶

以高度有序的介观结构SiO2／CdO纳米复合物为前驱体，在硒源或硫源存在的还原性条件下，利用原位水热反应，合成了介观结构SiO2／CdSe及SiO2／CdS纳米复合物，除去SiO2后，得到半导体CASe及CAS纳米晶．通过X射线衍射(XRD)，高分辨率透射电镜(HRTEM)，X射线能散射谱(EDX)及选区电子衍射(SAED)等手段对产物进行了组成和结构表征．结果表明，介观结构SiO2主体材料在合成过程中起到了一定的形貌和尺寸限制作用，得到的CdSe和CdS均为直径在8nm左右的类球形六方相纳米晶．     

DSC法测定PS玻璃化温度的再研究

对Fevotte提出的由DSC曲线构建玻璃化温度谱图的方法进行了改进,将橡胶态含量为0.5时的温度定义为聚合物的Tghr.采用改进Fevotte方法重新研究了PS的玻璃-橡胶态转变,PS的Tghr值比半比热外推法结果Tghc高约4K,当考察热处理时间和降温速率对聚合物玻璃-橡胶态转变的影响规律时,改进方法得到的结果与理论分析更为一致.聚合物的Tghr受热历史影响,随热处理条件改变,通过对不同降温速率冷却后样品滞后焓数据的拟合,推测PS样品的Tghr在377.5～390.9K范围内变化.