Synthesis,characterization, and thermal properties of novel silicon 1,1,3,3-tetramethylguanidinate derivatives and use as single-source chemical vapor deposition precursors |
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| Authors: | Xiao Ma Chongying Xu Zhibiao Mao Peiyu Ji Chenggang Jin Dongsheng Xu Yuqiang Ding |
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| Institution: | 1. School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu Province, China;2. Jiangsu Nata Opto-Electronic Material Co. Ltd., 7F One Lakepoint, No. 9 Cuiwei Street, Suzhou Industrial Park, Jiangsu Province, China;3. School of Physical Science and Technology, Soochow University, Suzhou, Jiangsu Province, China |
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| Abstract: | A series of chemical vapor deposition (CVD) precursors have been synthesized by a single-step reaction of 1,1,3,3-tetramethylguanidine and a variety of silicon chlorides. The structures of the 1,1,3,3-tetramethylguanidinate-based compounds were verified by 1H NMR, 13C NMR, XPS, EI-MS, and elemental analysis. The thermal stability, transport behavior, and vapor pressures of these compounds were evaluated by simultaneous thermal analyses (STA). These compounds are highly stable and those in liquid form are very volatile. Silicon carbonitride (SiCN) thin films were prepared by using bis (tetramethylguanidine)-dimethyl-silane as the precursor in helicon wave plasma chemical vapor deposition (HWP-CVD). The properties of the films were investigated by SEM, AFM, and XPS. The results showed that the films have good uniformities, low friction coefficient, and high hardness, enabling the films for fabrication of semiconductor devices. |
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| Keywords: | guanidine helicon wave plasma CVD precursor silicon SiCN |
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