| 宽带隙Cu(In,Al)Se2薄膜的制备及表征 |
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| 引用本文： | 黄灿领,胡彬彬,王广君,李洪伟,龚时江,杜祖亮.宽带隙Cu(In,Al)Se2薄膜的制备及表征[J].高等学校化学学报,2011,32(12):2739-2742. |
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| 作者姓名： | 黄灿领 胡彬彬 王广君 李洪伟 龚时江 杜祖亮 |
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| 作者单位： | 河南大学特种功能材料教育部重点实验室,开封,475004 |
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| 基金项目： | 国家自然科学基金，教育部科技创新工程重大项目培育资金项目，河南省科技创新杰出人才基金 |
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| 摘 要： | 以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜,通过真空蒸镀法在CIS薄膜上沉积Al膜,经硒化退火后在氧化铟锡(fro)基底上制备了Cu(InAl) Se2(CIAS)薄膜.采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis...
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| 关 键 词： | 特殊脉冲电沉积 真空蒸镀 CuInSe2薄膜 Cu (InAl) Se2薄膜 |
| 收稿时间： | 2011-04-02 |
Preparation and Characterization of Wide-bandgap Cu ( In, Al) Se2 Thin Films |
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| HUANG Can-Ling,HU Bin-Bin,WANG Guang-Jun,LI Hong-Wei,GONG Shi-Jiang,DU Zu-Liang.Preparation and Characterization of Wide-bandgap Cu ( In, Al) Se2 Thin Films[J].Chemical Research In Chinese Universities,2011,32(12):2739-2742. |
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| Authors: | HUANG Can-Ling HU Bin-Bin WANG Guang-Jun LI Hong-Wei GONG Shi-Jiang DU Zu-Liang |
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| Institution: | Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China |
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| Abstract: | The precursor thin films of CuInSe2(CIS) were prepared using a special pulse electrodeposition method and Al was deposited on the CIS thin films through the vacuum evaporation method. The Cu(In, Al)Se2(CIAS) thin films were successfully fabricated by annealing the composite thin films of CIS and Al. The morphology, structure, composition and optical absorbance property of the CIAS thin films were characterized by SEM, EDS, XRD, XPS and UV-Vis, respectively. The CIAS thin films composed of uniform particles present a chalcopyrite structure, and the surface is smooth and compact. The CIAS thin film has good absorption in the visible region, and the band gap is about 1.65 eV. |
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| Keywords: | Special pulse electrodeposition Vacuum evaporation CuInSe2 thin film Cu(In Al)Se2 thin film |
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