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1.
以高纯Sn粉为原料,采用水辅助生长法在850 ℃下合成了SnO2纳米带,用SEM、TEM、XRD、EDX、 HRTEM和SAED对其形貌、结构和成份进行了表征,对SnO2纳米带的光致发光和红外谱图进行了分析,探讨了水辅助生长SnO2 纳米带的化学原理和生长机制。结果表明:用水辅助生长法制备的SnO2纳米带产量高、结构均匀,XRD衍射图与SnO2的标准图完全一致,纳米带的宽度为70~100 nm,厚度为5~8 nm,长度可达数十微米;SnO2纳米带光致发光在617 nm和651 nm处有2个强峰,在446 nm处有一个弱峰,这些都是由氧空位引起的;SnO2纳米带的红外谱图中560.6 cm-1处的峰属于表面振动模式;水辅助生长SnO2纳米带的可能机制是VS生长机制。  相似文献   

2.
用高温合成法制备出硫酸钙复盐Na4Ca(SO4)3,利用差热分析、X射线衍射、扫描电子显微分析等现代测试仪器研究了该复盐的反应历程。研究结果表明,其反应过程按CaSO4+Na2SO4→(Na0.8Ca0.1)2SO4→Na4Ca(SO4)3进行。Na4Ca(SO4)3为高温稳定相,其最佳合成温度为800 ℃~1 100 ℃。育晶温度及时间对复盐形貌有明显影响,在1 000 ℃保温2 h后转到945 ℃育晶5 h,晶体生长较好。  相似文献   

3.
以Na2WO4和CdCl2为主要原料,在130 ℃水热制备了CdWO4纳米棒,并用扫描电镜(SEM)、透射电镜(TEM)、粉末X射线衍射(XRD)和能谱元素分析(EDS)对产物进行了表征。结果表明,产物为长约100 nm,直径10~30 nm的CdWO4纳米棒。研究了不同反应条件下制备的CdWO4纳米棒的光致发光性能。  相似文献   

4.
基于SnO2为修饰层的Au-Pt / SnO2 / Au复合电极研究   总被引:1,自引:0,他引:1  
用真空镀膜法在Au电极上沉积SnO2薄膜,在HAuCl4和H2PtCl4的混合溶液中利用直接还原法,将Au-Pt双金属纳米颗粒组装在SnO2 / Au电极上,得到Au-Pt / SnO2 / Au复合电极。采用SEM、TEM、XPS及CV曲线测定对Au-Pt / SnO2 / Au复合电极进行了表征。结果表明:复合电极上双金属纳米颗粒分布均匀,粒子粒径约为25 nm左右。SnO2作为修饰层以配位键与双金属纳米粒子结合。Au-Pt / SnO2 / Au复合电极具有良好对甲醇氧化的电化学性能。  相似文献   

5.
水热合成MoO3纳米带的生长机理研究   总被引:1,自引:0,他引:1  
祁琰媛  陈文  麦立强  胡彬  戴英 《无机化学学报》2007,23(11):1895-1900
以离子交换法制备的氧化钼溶胶为前驱体,在水热条件下制备了单晶MoO3纳米带,对样品进行了XRD、SEM和TEM分析。通过考察水热反应温度和时间对产物结构和形貌的影响,结合材料热力学和动力学理论,探讨了MoO3纳米带在水热条件下的生长机理。离子交换法制备的溶胶在水热条件下首先转变为热力学亚稳相h-MoO3六角柱,随着温度的升高和时间的延长,h-MoO3按照溶解-重结晶过程转变为稳定相α-MoO3纳米带。  相似文献   

6.
本文采用低温陈化法制备了SO42-/ZrO2-TiO2固体超强酸,并将其用于催化乙酸正丁酯的酯化反应,采用TEM、IR和XRD等对样品进行了检测。结果表明,低温陈化的样品具有较强的酸性和催化活性,空气中放置30天后其酸性和催化活性变化不大。XRD谱图显示,低温陈化的样品经550℃焙烧后出现了较强的锐钛矿晶相衍射峰。  相似文献   

7.
采用水热-煅烧法制备Cd2SnO4,之后通过超声混合法得到一系列MoS2/Cd2SnO4复合材料。采用X射线衍射、扫描电子显微镜、X射线光电子能谱对Cd2SnO4和一系列MoS2/Cd2SnO4复合材料进行结构和形貌的表征。研究了MoS2掺杂量对于MoS2/Cd2SnO4复合材料的气敏性能影响。实验结果表明,当MoS2与Cd2SnO4的质量比为2.5%,MoS2/Cd2SnO4复合材料制备的气敏元件在170 ℃时对浓度为100 μL·L-1的甲醛气体的灵敏度为40.0,最低检测限为0.1 μL·L-1。  相似文献   

8.
电沉积三维多孔Pt/SnO2薄膜及其对甲醇的电催化氧化   总被引:1,自引:0,他引:1  
周颖华  岑树琼  李则林  牛振江 《化学学报》2007,65(23):2669-2674
在高电流密度下以阴极析出的氢气泡为“模板”电沉积三维多孔Sn薄膜, 经在200 ℃ 2 h和400 ℃ 2 h热处理氧化后电沉积金属Pt, 制得三维多孔的Pt/SnO2 (3D-Pt/SnO2)薄膜. 通过扫描电镜(SEM)和X射线衍射(XRD)分析了薄膜的形貌和结构. 结果显示Pt主要沉积在SnO2枝晶上, 形成Ptshell/SnO2core结构的枝晶. 在0.5 mol•dm-3 H2SO4+1.0 mol•dm-3 CH3OH溶液中的循环伏安结果表明, 3D-Pt/SnO2薄膜电极在酸性溶液中电催化氧化甲醇的性能优于电沉积的纯铂电极, 而且具有较高的稳定性.  相似文献   

9.
在高电流密度下以阴极析出的氢气泡为“模板”电沉积三维多孔Sn薄膜, 经在200 ℃ 2 h和400 ℃ 2 h热处理氧化后电沉积金属Pt, 制得三维多孔的Pt/SnO2 (3D-Pt/SnO2)薄膜. 通过扫描电镜(SEM)和X射线衍射(XRD)分析了薄膜的形貌和结构. 结果显示Pt主要沉积在SnO2枝晶上, 形成Ptshell/SnO2core结构的枝晶. 在0.5 mol•dm-3 H2SO4+1.0 mol•dm-3 CH3OH溶液中的循环伏安结果表明, 3D-Pt/SnO2薄膜电极在酸性溶液中电催化氧化甲醇的性能优于电沉积的纯铂电极, 而且具有较高的稳定性.  相似文献   

10.
(ZrO2)0.92(Gd2O3)0.08纳米晶的水热合成及其烧结体的电性能   总被引:1,自引:0,他引:1  
周丽  马桂林  陶为华 《无机化学学报》2003,19(11):1163-1168
用新制备的(Gd,Zr)(OH)x·yH2O共沉淀作前驱体,在强碱性介质中用水热法合成了(ZrO2)0.92(Gd2O3)0.08纳米立方晶,考察了反应温度、pH值等水热反应条件对纳米晶粒大小的影响。将(ZrO2)0.92(Gd2O3)0.08  相似文献   

11.
phase diagrams of KCl-KBO2-K2CO3, K2MoO4-KBO2-K2CO3, and K2WO4-KBO2-K2CO3 ternary systems were studied by a calculation-experimental method and differential thermal analysis (DTA). The coordinates of ternary eutectics were determined to be E 1: 622°C, 8.5 mol % KBO2, 56.5 mol % KCl, and 35 mol % K2CO3; E 2: 710°C, 23 mol % KBO2, 43 mol % K2CO3, and 34 mol % K2MoO4; E 3: 710°C, 23 mol % KBO2, 43 mol % K2CO3, and 34 mol % K2WO4. The specific heats of melting of the eutectics were determined.  相似文献   

12.
Solubility in the Na2Cr2O7-(NH4)2Cr2O7-K2Cr2O7-H2O four-component water-salt system at 25, 50, and 75°C was studied for the first time. Phase field boundaries for individual salts and potassium and ammonium dichromate solid solutions, monovariant lines, and invariant points were determined. Experimental data were used to optimize the looped isohydric process of potassium dichromate preparation involving additional salts.  相似文献   

13.
一些具有NASICON型网格结构的固体电解质具有高的电导率和好的稳定性,NASICON的意思是Na Super Ionic Conductor[1]。当NaZr2(PO4)3中P5 被Si4 部分取代时便可以得到具有NASICON结构的Na1 xZr2SixP3-xO12体系,其具有高的钠离子电导率。然而有相同结构的Li1 xZr2SixP3-xO12体系的离子电导率却很低,这是因为Li 半径太小,而NASICON三维网格结构的离子通道太大,两者不匹配而使电导率下降[2]。但当LiZr2(PO4)3中Zr4 被离子半径小些的Ti4 取代,所得LiTi2(PO4)3的通道就与Li 半径相匹配,适合于锂离子的迁移,从而使其电导率…  相似文献   

14.
马修臻  胡斌 《化学通报》2018,81(10):939-943,938
本文用高精度数字式振荡管密度计测定了288K至318K温度范围内Li2SO4 + Na2SO4 + H2O和 Li2SO4 + K2SO4 + H2O三元体系的密度。混合溶液的离子强度范围从0.1到4.5 mol.kg–1,混合溶液中Na2SO4和K2SO4的离子强度分数为0.2,0.4,0.6和0.8。用密度实验值拟合得到了不同温度下Pitzer离子相互作用模型混合参数θV和 ψV,模型的计算值与实验值的偏差在±0.002 g.cm3以内。用Pitzer模型计算了不同离子强度下三元体系的混合体积。  相似文献   

15.
MMe5(dmpe) (M = Nb or Ta, dmpe = Me2PCH2CH2PMe2) reacts with H2 (500 atm) and dmpe in THF at 60°C to give MH5(dmpe)2? NbH5(dmpe)2 readily reacts with two mol of CO or ethylene (L) to give NbHL2(dmpe)2. The exchange of the hydride ligand with the ethylene protons in NbH(C2H4)2(dmpe)2 is not rapid on the 1H NMR time scale (60 MHz) at 95°C.  相似文献   

16.
The lithium-ion-conducting inorganic solid electrolytes in the oxide systems Li2O-SiO2-P2O5 and Li2O-TiO2-SiO2-P2O5 were prepared by the solid-state reaction, and the electrolyte pellet made by cold-pressing method had diameter of 13 mm and was about 1 mm thick. Phase identification and surface morphology of the products were carried out by X-ray diffraction and scanning electron microscopy. Ionic conductivity of the pellets was investigated through ac impedance. The results show that the adding of other cations can improve the ionic conductivity of the solid electrolyte, and the sintering temperature and duration can influence the ionic conductivity. The maximum ionic conductivity in the samples is 9.9 × 10−4 S/cm in the Li2O-TiO2-SiO2-P2O5 system. Original Russian Text ? W. Li, M. Wang, Z.H. Li, X.F. Shang, H. Wang, Y.W. Wang, Y.B. Xu, 2007, published in Elektrokhimiya, 2007, Vol. 43, No. 11, pp. 1341–1345.  相似文献   

17.
This paper examines the structural changes with temperature and composition in the Sc2Si2O7-Y2Si2O7 system; members of this system are expected to form in the intergranular region of Si3N4 and SiC structural ceramics when sintered with the aid of Y2O3 and Sc2O3 mixtures. A set of different compositions have been synthesized using the sol-gel method to obtain a xerogel, which has been calcined at temperatures between 1300 and 1750 °C during different times. The temperature-composition diagram of the system, obtained from powder XRD data, is dominated by the β-RE2Si2O7 polymorph, with γ-RE2Si2O7 and δ-RE2Si2O7 showing very reduced stability fields. Isotherms at 1300 and 1600 °C have been analysed in detail to evaluate the solid solubility of the components. Although, the XRD data show a complete solid solubility of β-Sc2Si2O7 in β-Y2Si2O7 at 1300 °C, the 29Si MAS-NMR spectra indicate a local structural change at x ca. 1.15 (Sc2−xYxSi2O7) related to the configuration of the Si tetrahedron, which does not affect the long-range order of the β-RE2Si2O7 structure. Finally, it is interesting to note that, although Sc2Si2O7 shows a unique stable polymorph (β), Sc3+ is able to replace Y3+ in γ-Y2Si2O7 in the compositional range 1.86?x?2 (where x is Sc2−xYxSi2O7) as well as in δ-Y2Si2O7 for compositions much closer to the pure Y2Si2O7.  相似文献   

18.
The phase diagrams of the NaBO2-NaCl-Na2CO3, NaBO2-Na2CO3-Na2MoO4, NaBO2- Na2CO3-Na2WO4, and NaBO2-NaCl-Na2WO4 ternary systems were studied by a calculation-experimental method and differential thermal analysis. The coordinates of ternary eutectics were determined: E 1: 612°C, 16 mol % NaBO2, 42 mol % NaCl, and 42 mol % Na2CO3; E 2: 568°C, 12 mol % NaBO2, 28 mol % Na2CO3, and 60 mol % Na2MoO4; E 3: 575°C, 12 mol % NaBO2, 32 mol % Na2CO3, and 56 mol % Na2WO4; E 4: 628°C, 8 mol % NaBO2, 20 mol % NaCl, and 72 mol % Na2WO4; and E 5: 655°C, 9 mol % NaBO2, 53 mol % NaCl, and 38 mol % Na2WO4.  相似文献   

19.
The novel, 1D semiconductor (H2NC4H8NCH2CH2NH2)(HNCH2CH2NH2)3Zn2Ge2Se8 has been synthesized under solvothermal conditions using N-(2-aminoethyl)piperazine as solvent and templating agent at 200 °C. The material was characterized by single crystal and powder X-ray diffraction, IR and Raman spectroscopy and thermogravimetric analysis. The compound consists of 1D anionic [Zn2Ge2Se8]4− chains made of alternating edge-shared [ZnSe4] and [GeSe4] tetrahedra that charged balanced by one N-(2-aminoethyl)piperazinium and three piperazinium cations. The optical properties were investigated with solid state UV–Vis/near IR spectroscopy and the results show that the solid is a medium gap semiconductor with an absorption edge at 1.8 eV.  相似文献   

20.
Reactions of [Cp2Ti(btmsa)] (btmsa = bis(trimethylsilyl)acetylene) with R4Sb2 (R = Me, Me3Si) give [Cp2TiSbMe2]2 (1) or [Cp2TiSb(SiMe3)2]2 (2) respectively. [Cp2TiCl]2·2Mes4Sb2 (3) is serendipitously formed from [Cp2Ti(btmsa)] and Mes2SbH containing NH4Cl traces.  相似文献   

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