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1.
利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜,利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入(辐照)薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响,结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降,而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H+离子注入形成的氢化物是引起相变点的变化的主要因素。  相似文献   

2.
Zn离子注入和退火对ZnO薄膜光学性能的影响   总被引:1,自引:2,他引:1       下载免费PDF全文
 利用溶胶凝胶方法在石英玻璃衬底上制备了ZnO薄膜,将能量56 keV、剂量1×1017 cm-2的Zn离子注入到薄膜中。离子注入后,薄膜在500~900 ℃的氩气中退火,利用X射线衍射谱、光致发光谱和光吸收谱研究了离子注入和退火对ZnO薄膜结构和光学性质的影响。结果显示:衍射峰在约700 ℃退火后得到恢复;当退火温度小于600 ℃时,吸收边随着退火温度的提高发生蓝移,超过600 ℃时,吸收边随着退火温度的提高发生红移;近带边激子发光和深能级缺陷发光都随退火温度的提高而增强。  相似文献   

3.
利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×1017 cm-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射(XRD)研究了薄膜结构的变化,利用光致发光(PL)和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词: ZnS薄膜 离子注入 X射线衍射 光致发光  相似文献   

4.
 研究了用HZ-B串列加速器的18MeV质子辐照对TiNi形状记忆合金R相变的影响,辐照在奥氏体母相状态下进行。示差扫描量热法(DSC)表明,辐照后R相变开始温度TsR和逆马氏体相变结束温度TfA随辐照注量的增加而降低。当注量为1.53×1014/cm2时,TsR和TfA分别下降6K和13K,辐照未引起R相变结束温度TsR和逆马氏体相变开始温度TfA的变化。表明辐照后母相(奥氏体相)稳定。透射电镜(TEM)分析表明辐照后没有引起合金可观察的微观组织变化。辐照对R相变开始温度TsR和逆马氏体相变结束温度Af的影响可能是由于质子辐照后产生了孤立的缺陷团,形成了局部应力场,引起晶格有序度的下降所造成的。  相似文献   

5.
p型ZnO薄膜的制备及特性   总被引:1,自引:0,他引:1       下载免费PDF全文
采用射频磁控溅射在Si片上制备ZnO薄膜,通过离子注入对样品进行N掺杂,在不同温度下进行退火并实现了p型转变.用扫描电子显微镜、X射线衍射和Hall测量对薄膜进行了表征,结果表明薄膜具有良好的表面形貌和高度c轴择优取向,退火后p型ZnO薄膜的最高载流子浓度和最低电阻率分别为1.68×1016cm-3和41.5Ω·cm.讨论并分析了退火温度和时间对ZnO薄膜p型转变的影响.  相似文献   

6.
采用离子注入技术将Zn离子注入Si(001)基片,并在大气环境下加热氧化制备了ZnO纳米团簇.利用电子探针、薄膜X射线衍射仪、原子力显微镜和透射电子显微镜,对注入和热氧化后的薄膜成分、表面形貌和微观结构进行表征,探讨了热氧化温度以及注入剂量对纳米ZnO团簇的成核过程及生长行为的影响.结果表明,Zn离子注入到Si基片表面后形成了Zn纳米团簇,热氧化过程中Zn离子向表面扩散,在表面SiO2非晶层和Si基片多晶区的界面处形成纳米团簇.热氧化温度是影响ZnO纳米团簇结晶质量的一个重要参数.随着热氧化温度的升高,金属Zn的衍射峰强度逐渐变弱并消失,而ZnO的(101)衍射峰强度逐渐增强.当热氧化温度高于800 ℃以后,ZnO与SiO2之间开始发生化学反应形成Zn2SiO4. 关键词: ZnO纳米团簇 离子注入 微观结构 形貌分析  相似文献   

7.
采用X射线衍射和X射线光电子能谱实验手段对不同厚度的NiTi薄膜相变温度的变化进行了分析.结果表明在相同衬底温度和退火条件下,3?μm厚度的薄膜晶化温度高于18?μm厚度的薄膜.衬底温度越高,薄膜越易晶化,退火后薄膜奥氏体相转变温度As越低.薄膜的表面有TiO2氧化层形成,氧化层阻止了Ni原子渗出;膜与基片的界面存在Ti2O3和NiO.由于表面和界面氧化层的存在,不同厚度的薄膜内层的厚度也不同,因而薄膜越薄,Ni原子的含量就越高.Ni原子的含量的不同会影响薄膜的相变温度. 关键词: NiTi合金薄膜 X射线衍射 相变 X射线光电子能谱  相似文献   

8.
本文提出用电子自旋共振(ESR)波谱的对数直线法确定ZnS:Mn的结构相变温度,在研究微量掺杂离子影响ZnS微晶结构相变温度的实验分析中取得满意的结果,克服了X射线衍射对Mn2+浓度在10-3—10-6g/g范围内ZnS相变温度不能区分的困难。  相似文献   

9.
 采用磁控溅射法制备了Zr-Mo膜,随后在低能静电加速器上分别采用剂量为2.80×1017~1.12 ×1018ions·cm-2的He+、H+离子辐照Zr-Mo膜,利用光学透镜、扫描电镜、原子力显微镜和X射线衍射研究He+、H+离子协同注入效应对Zr-Mo膜微观结构的影响。实验结果表明:原始Zr-Mo膜表层晶粒清晰可见,尺寸约为200nm;辐照效应可导致Zr-Mo膜表层产生微观损伤区域,在注He+基础上注H+导致Zr-Mo膜出现更为严重的损伤现象;离子注入的表面溅射效应可使膜面晶粒边界逐渐刻蚀退让,导致膜面更加光滑、细致;He+、H+ 离子协同注入可使Zr-Mo膜晶格发生畸变,注入期间未使Zr-Mo膜发生吸H相变生成氢化物。  相似文献   

10.
连续激光辐照下二氧化钒薄膜热致相变实验研究   总被引:5,自引:1,他引:5       下载免费PDF全文
 介绍了VO2薄膜的相变原理,用磁控离子溅射法制备了VO2薄膜,并进行了X射线衍射和不同温度下的光谱透过率测量。在1.319 μm 连续波激光辐照下,实时测量了VO2薄膜的温度变化,以及由于温度变化引起相变后对激光透过率的变化。结果表明,入射到薄膜表面的平均功率为8.9 W、光斑直径2 mm时,激光出光480 ms后,VO2的温度从室温上升到约100 ℃,薄膜发生了相变,其对1.319 μm激光的透过率从相变前的48%降为相变后的28%。  相似文献   

11.
An atomic force microscope operated at various temperatures is introduced to evaluate phase transformation temperature and to observe microstructure for a shape memory alloy at same time in this paper. A commercial hot-rolled TiNi shape memory alloy bar is ground, polished and etched. The specimen is then observed by atomic force microscopy at the temperature range of 20–100 C in nitrogen gas. The topographies of a TiNi specimen show twinning martensite with rough surface and smooth austenite at various temperatures. The shape memory effect of the TiNi alloy is analyzed based on the shifts of the topographies obtained at various temperatures, which are used to evaluate the phase transformation temperature between martensite and austenite. The phase transformation temperature is also confirmed in a differential scanning calorimeter (DSC) experiment.  相似文献   

12.
Temperature changes during tensile test and simple shear test of TiNi shape memory alloys loaded at various strain rates and at different temperatures have been presented. The temperature changes were measured by recording infrared radiation emitted by the surface of the specimen. It was found that the martensite transformation was accompanied by an increase in temperature while the reversible transformation––temperature decrease.  相似文献   

13.
TiNi thin films with BaTiO3 and PbZr0.52Ti0.48O3 (PZT) as buffer layers were deposited on Si(100) substrates by the pulsed laser deposition (PLD) method. Buffer layers (BaTiO3 and PZT) were deposited at 600 °C in oxygen (O2) environment and TiNi films were deposited on the top of the buffer layer in presence of 15 mTorr nitrogen (N2) at various deposition temperatures (50, 300, and 500 °C). Synthesis and characterization of TiNi films were investigated from the crystallographic point of view by using X-ray diffractometer (XRD) and atomic force microscope (AFM) techniques. It is found that buffer layer of BaTiO3 and PZT have improved the crystallinity of TiNi films deposited at higher temperatures. The TiNi/PZT film was uniform compared to TiNi/BaTiO3 film with the exception of agglomerates that appeared throughout the layer.  相似文献   

14.
The variation of the temperatures of martensitic transformations and the rate of radiation damage in TiNi alloys were studied upon irradiation with reactor neutrons. The irradiation was performed at temperatures of 120 and 335 K. In the process of irradiation, electrical resistance of the alloys was measured continuously and thermal cycling through the temperature range of martensitic transformations was carried out. The transformation temperatures were shown to decrease at different rates with increasing irradiation fluence. The electrical resistance increases linearly with increasing neutron fluence to 6.7×1018 cm?2 irrespective of the irradiation temperature. Deviation from a linear dependence is only observed when the irradiation leads to a change in the phase state of the alloy. The rate of the resistance increase only slightly depends on the irradiation temperature. In martensite, it is greater by a factor of 2–4 than that in austenite. Mechanisms of irradiation-induced modification of the structure of TiNi alloys that explain the experimental data obtained are discussed.  相似文献   

15.
18 MeV质子辐照对TiNi形状记忆合金R相变的影响   总被引:4,自引:4,他引:0       下载免费PDF全文
研究了用HZ B串列加速器的18MeV质子辐照对TiNi形状记忆合金R相变的影响,辐照在奥氏体母相状态下进行。示差扫描量热法(DSC)表明,辐照后R相变开始温度TsR和逆马氏体相变结束温度TfA随辐照注量的增加而降低。当注量为1.53×1014/cm2时,TsR和TfA分别下降6K和13K,辐照未引起R相变结束温度TfR和逆马氏体相变开始温度TsA的变化。表明辐照后母相(奥氏体相)稳定。透射电镜(TEM)分析表明辐照后没有引起合金可观察的微观组织变化。辐照对R相变开始温度TsR和逆马氏体相变结束温度Af的影响可能是由于质子辐照后产生了孤立的缺陷团,形成了局部应力场,引起晶格有序度的下降所造成的。  相似文献   

16.
The temperature kinetics of martensitic transformations in a skeleton-type TiC/TiNi composite with micron-sized structural constituents was studied. The composite is fabricated using a unique technique. Heat treatment and a change in the chemical composition of the titanium carbide are shown to affect the transformation temperatures. This effect is related to the redistribution of the chemical elements between the carbide and metallic components of the composite; as a result, the titanium nickelide becomes enriched in nickel.  相似文献   

17.
Resnina  N. N.  Belyaev  S. P.  Sibirev  A. V. 《Technical Physics》2011,56(4):573-576
The effect of low-temperature annealing on the structure, kinetics of martensitic transformations, and functional properties of an equiatomic TiNi shape memory alloy is studied. Low-temperature annealing of the TiNi alloy is shown to decrease the temperature of the end of the forward martensite transformation M f and the temperature of the onset of the reverse transformation A s , which increases the transformation temperature range. As a result, the shape memory effect is improved due to a decrease in the irreversible strain. These phenomena are assumed to be caused by the hardening of the TiNi alloy induced by low-temperature annealing.  相似文献   

18.
The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen was under study. The series of thin films deposited at the deposition temperatures of 50–200°C were inspected by XRD, Raman spectroscopy and UV Vis spectrophotometry. All samples were found to be amorphous with no presence of the crystalline phase. Ordered silicon hydride regions were proved by XRD. Raman measurement analysis substantiated the results received from XRD showing that with increasing deposition temperature silicon-silicon bond-angle fluctuation decreases. The optical characterization based on transmittance spectra in the visible region presented that the refractive index exhibits upward trend with increasing deposition temperature, which can be caused by the densification of the amorphous network. We found out that the scale factor of the Tauc plot increases with the deposition temperature. This behaviour can be attributed to the increasing ordering of silicon hydride regions. The Tauc band gap energy, the iso-absorption value their difference were not particularly influenced by the deposition temperature. Improvements of the microstructure of the Si amorphous network have been deduced from the analysis.  相似文献   

19.
The aim of this work is an investigation of structure and martensitic transformation in bimetal composite ‘TiNi–stainless steel’ produced by explosion welding. The results have shown that the mixture of chemical elements is observed in very narrow intervals of 6 µm close to the joint – 2 µm from the TiNi side and 4 µm from the steel one. Micro-hardness distribution in the vicinity of the joint is non-monotonic in the interval of 60 µm. Connection of stainless steel and TiNi plates by explosion welding leads to a dramatic change of martensitic transformation kinetics. Temperatures and the temperature interval of phase transformation increase strongly and heat transformation decreases. Annealing at 500°C for 2 h of bimetal composite decreases the interval of micro-hardness variation and partially recovers kinetics of phase transitions.  相似文献   

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