GaMnAs薄膜洛伦兹振子模型参数提取以及材料缺陷分析

利用改进的遗传算法从GaMnAs外延薄膜的远红外反射光谱中提取了GaMnAs薄膜的洛伦兹振子模型参数,发现GaAs掺入Mn后,ωTO向低频方向移动,ωLO基本保持不变,ε∞和εs均减小,γ有很大变化.并通过XRD以及近红外谱发现Mn的掺入会引入缺陷,这种缺陷会影响晶格质量,导致γ发生很大变化.     

基于电子回旋共振-等离子体增强金属有机物化学气相沉积技术生长GaMnN稀磁半导体的研究

利用电子回旋共振-等离子体增强金属有机物化学气相沉积 (ECR-PEMOCVD)方法,采用二茂锰(Cp₂Mn)作为Mn源,高纯氮气作为氮源,三乙基镓(TEGa)作为Ga源,在蓝宝石(α-Al₂O₃)(0001)衬底上外延生长GaMnN稀磁半导体薄膜.反射高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)表征了GaMnN薄膜的晶体结构和表面形貌.GaMnN薄膜均表现出良好的(0002)择优取向,表明制备的薄膜倾向于 关键词： GaMnN薄膜 稀磁半导体 铁磁性 居里温度     

面向应用的新一代稀磁半导体研究进展

稀磁半导体具有能同时调控电荷与自旋的特性,是破解摩尔定律难题的候选材料之一.我们团队率先提出了稀磁半导体中自旋和电荷掺杂分离的机制,探索并研制了新一代稀磁半导体材料,为突破经典稀磁半导体材料的制备瓶颈提供了有效解决方案.以(Ba,K)(Zn,Mn)₂As₂等为代表的新一代稀磁半导体,通过等价态的Mn掺杂引入自旋、异价态的非磁性离子掺杂引入电荷,成功实现了230 K的居里温度,刷新了可控型稀磁半导体的居里温度记录.本文将重点介绍几种代表性的新一代稀磁半导体的设计与研制、新一代稀磁半导体的综合物性表征、大尺寸单晶生长以及基于单晶的安德烈夫异质结研制.我们团队通过新一代稀磁半导体的新材料设计研制、综合物性研究、简单原型器件构建的“全链条”模式研究,开拓了自旋电荷分别掺杂的稀磁半导体材料研究领域,充分展现了自旋和电荷掺杂分离的新一代稀磁半导体材料潜在应用前景.     

N掺杂锐钛矿TiO2光学性能的第一性原理研究

用平面波赝势方法(PWP)计算了N掺杂锐钛矿型TiO₂前后的光学特性,即介电函数虚部ε₂(ω)，光学吸收系数I(ω)和反射率R(ω). 并从能带结构上解释了为什么掺N后锐钛矿型TiO₂的光学谱在2.93，3.56和3.97eV处相对掺杂前会出现3个峰值的原因. 从光谱图上分析得出，掺杂后TiO₂要发生红移现象，实验现象证实了这一结果. 关键词： N掺杂 2')" href="#">锐钛矿型TiO₂ 光学性能 第一性原理     

MgF2单晶的THz光谱研究

利用THz时域光谱技术对MgF₂晶体(样品1)和MgF₂：Co晶体(样品2)在0.5—2.5 THz的吸收特性进行了研究.在0.5—2.5 THz波段，样品1吸收系数α(ν)随频率ν增加而增大，最大值为24 cm^-1.样品2的吸收系数比样品1大得多，Co掺杂使晶格吸收带边向低频移动，而且样品2在1.9 THz有吸收峰，吸收系数达到70 cm^-1，由此求出F^--Co²⁺离子键伸缩振动的键力常数K为3.40×10^-2　N/cm.这一结果表明，THz光谱分析有可能成为研究晶体化学键的一种重要手段.利用光学常数之间的关系计算了两个样品在0.5—2.5 THz的介电函数的实部ε₁(ν)，得到样品1的ε₁(ν)值在4.67至4.73之间，样品2的ε₁(ν)值在4.62至5.01之间. 关键词： THz辐射 光谱 2晶体')" href="#">MgF₂晶体     

X射线吸收谱对Ga0.946Mn0.054As薄膜中缺陷的研究

采用低温分子束外延法(LT-MBE)制备出Ga_0.946Mn_0.054As稀磁半导体(DMS)薄膜.通过X射线吸收谱(XAS)研究影响Ga_0.946Mn_0.054As薄膜性质的主要缺陷Mn间隙原子(Mn_I)和As反位原子(As_Ga).实验结果表明,在较低生长温度(T_S=200℃)下Ga_0.946Mn_{0.054 关键词： 0.946}Mn_0.054As稀磁半导体')" href="#">Ga_0.946Mn_0.054As稀磁半导体 X射线吸收谱 As反位缺陷 Mn间隙原子     

Tb0.3Dy0.7Fe2合金的本构参数辨识方法研究

建立了一种简便的、适用于磁畴模型应用的Tb_0.3Dy_0.7Fe₂ 合金本构参数辨识方法. 针对Tb_0.3Dy_0.7Fe₂合金磁畴模型中本构参数不明确且直接实验测试困难的问题, 提出了一种数值计算与实验测试相结合的参数辨识方法. 采用坐标变换与绘制自由能等势曲线相结合的方法, 简化了载荷作用下Tb_0.3Dy_0.7Fe₂ 合金内磁畴角度偏转的数值计算, 研究了合金磁畴角度偏转模型的参数依赖性. 在此基础上, 结合简单的实验测试, 建立了Tb_0.3Dy_0.7Fe₂合金各向异性常数K₁ 和K₂、能量分布因子ω、晶轴取向分布的辨识及修正方法. 该方法能够简单、快速地完成Tb_0.3Dy_0.7Fe₂ 合金磁畴模型中本构参数的辨识, 对完善磁致伸缩材料磁畴偏转的数值计算模型非常有意义. 理论分析可为类磁致伸缩材料磁机耦合模型的建立、完善, 以及材料本构参数的辨识、获取提供参考.     

Mn和N共掺ZnO稀磁半导体薄膜的研究

使用对Zn₂N₃:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μ_B—0.61 μ_B.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好. 关键词： 磁性半导体 受主掺杂 空穴媒介的铁磁性     

(Ga,Mn)As光调制反射光谱

室温下我们研究了稀磁半导体(Ga,Mn)As的光调制反射(PR)光谱,观测到来自样品的Franz-Keldysh振荡(FKO)信号。随着Mn原子浓度的增加,PR线形展宽,但是临界点E₀和E₀+Δ₀没有明显的移动。根据FKO振荡数据,计算得到样品表面电场强度随Mn原子掺杂浓度的增加而增强。测量到与Mn原子掺杂相关的杂质带,其能量位置离GaAs价带边~100 meV。根据样品的表面电场强度和表面耗尽层模型,估算样品的空穴浓度为~10¹⁷cm^-3,较低的空穴浓度可能与样品具有较低的居里温度有关,或测量的PR信号来自于样品中外延层的部分耗尽区域。     

非对称量子点中磁极化子性质的磁场和温度依赖性

采用Tokuda线性组合算符法和Lee-Low-Pines变换法,研究了温度和磁场对非对称抛物量子点中强耦合磁极化子性质的影响,简捷地得到了作为量子点的横向受限强度ω₁、纵向受限强度ω₂、电子-声子耦合强度α、外磁场的回旋频率ω_c和温度参数γ的函数的磁极化子的振动频率λ、基态能量E₀和有效质量m 关键词： 非对称量子点 强耦合磁极化子 磁场和温度依赖性     

Optical absorption and spectrophotometric studies on the optical constants and dielectric of poly (o-toluidine) (POT) films grown by spin coating deposition

In this work, a poly(o-toluidine) “POT” was synthesized by chemical oxidative polymerization method in aqueous media. High uniform and good adhesion thin films of POT have been successfully deposited by the spin coating technique. The films were characterized by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The XRD pattern of the POT shows the semi-crystalline nature of the films. FTIR studies show the information of functional groups in POT. The optical transmittance and reflectance of POT film was measured in the 200–2500 nm wavelength range. The absorption coefficient analysis shows that the optical band gaps of POT film are direct allowed transition band gaps with 1.2 and 2.6 eV. Other optical absorption parameters such as extinction molar coefficient, oscillator strength and electric dipole strength were also calculated. The dispersion parameters were determined and discussed based on the single oscillator model. According to the analysis of dispersion curves some important parameters such as dispersion energy (E_d), oscillator energy (E_o), high frequency dielectric constant ₍ε_∞) and lattice dielectric constant (ε_L) were also evaluated. Discussion of the obtained results and their comparison with the previous published data were also given. The obtained desirable results of POT thin film can be useful for the optoelectronic applications.     

氟化铒薄膜晶体结构与红外光学性能的关系

使用热蒸发技术在锗(111)衬底上制备了氟化铒(ErF₃)薄膜. XRD衍射结果表明，随着衬底温度的增加，氟化铒薄膜发生了从非晶状态到结晶状态的转变，薄膜的表面形貌和红外光学性能也发生了显著的变化，部分结晶的氟化铒薄膜的远红外透射谱和完全非晶的薄膜基本一致，但是与结晶薄膜则没有相似之处. 晶格常数计算表明薄膜中存在压应力. 使用洛伦兹谐振子模型对薄膜的透射率曲线进行拟合计算，得到ErF₃薄膜的折射率和消光系数. 在10μm处非晶薄膜的折射率和消光系数最小值分别为1.38和0.01，结晶薄膜的折射率和消光系数最小值分别为1.32和0.006. 关键词： 氟化铒 红外光学性质 光学常数 洛伦兹谐振子模型     

Structural, absorption and optical dispersion characteristics of rhodamine B thin films prepared by drop casting technique

The drop casting technique has been successfully used to deposit highly uniform and good adhesion rhodamine B (Rh.B) thin films. The structural and morphological properties of Rh.B were studied by X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. The molecular structure and electronic transitions of Rh.B were investigated by Fourier-transform infrared (FTIR) and ultraviolet-visible-near infrared (UV-VIS-NIR) spectra, respectively. The calculated Stokes shift between the excitation and emission of Rh.B reflects the displacement in potential surface between the ground and the excited states. The important absorption parameters such as molar extinction coefficient (ε_molar), the oscillator strength (f), and the electric dipole strength (q²) were also reported. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals an indirect allowed transition with a band gap of 1.97 eV and associated phonons of 75 meV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple-Didomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of the free charge carrier concentration to the effective mass (N / m^?) were estimated. From the optical constants analysis, the optical conductivity, volume and surface energy loss functions could also be calculated.     

Temperature dependence of the A2 vibration modes in α-quartz

The infrared lattice bands which correspond to the A₂ modes of α-quartz, are analyzed by means of the classical oscillator model. The observed dependence of the classical parameters on temperature allows to think that non-linear effects occur by approaching the α→β phase transition.     

Partially conserved axial-vector current inS-matrix theory

Mandelstam’s argument that PCAC follows from assigning Lorentz quantum numberM=1 to the massless pion is examined in the context of multiparticle dual resonance model. We construct a factorisable dual model for pions which is formulated operatorially on the harmonic oscillator Fock space along the lines of Neveu-Schwarz model. The model has bothm _π andm _ϱ as arbitrary parameters unconstrained by the duality requirement. Adler self-consistency condition is satisfied if and only if the conditionmϱ²−mπ²=1/2 is imposed, in which case the model reduces to the chiral dual pion model of Neveu and Thorn, and Schwarz. The Lorentz quantum number of the pion in the dual model is shown to beM=0.     

Topological,morphological and optical properties of Gamma irradiated Ni (II) tetraphenyl porphyrin thin films

Thermal evaporation technique was used to prepare NiTPP Thin films at room temperature. The prepared films were divided into two groups; the first group was as-deposited films, and the second group was irradiated in gamma cell type ⁶⁰Co source at room temperature with total absorbed dose of 150 kGy in air. All films were identified by X-ray diffraction (XRD), Fourier-transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) before and after exposed to gamma radiation. The spectrophotometric measurement of transmittance and reflectance were used to investigate the optical properties at normal incidence of light in the wavelength range 200–2500 nm for as-deposited and gamma-irradiated films. Optical constants (refractive index n, and absorption index k) of as-deposited and irradiated films have been obtained in the wavelength range 200–2500 nm for all the samples. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of the free charge carrier concentration to the effective mass (N/m^?) were estimated for each group. The absorption analysis has been also performed to determine the type of electronic transition and the optical energy gap.     

Structural,optical and dispersion characteristics of nanocrystalline GaN films prepared by MOVPE

In this work, nanocrystalline GaN film was grown on a c-plane sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties of the nanocrystalline GaN thin film were studied. The morphological and structural properties of GaN film were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. According to the X-ray diffraction spectrum, a GaN film was formed with a wurtzite structure, which is the stable phase. The optical parameters were determined using spectrophotometric measurements of transmittance and reflectance in the wavelength range 200–2500 nm. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals a direct allowed transition with a band gap of 3.34 eV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–Didomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the free charge carrier concentration (N) were estimated. From the optical dielectric analysis, the optical conductivity, volume and surface energy loss functions were calculated. Moreover, the third-order nonlinear optical susceptibility χ⁽³⁾ was also considered.     

Doping dependent evolution of infrared spectra in underdoped YBa2Cu3Oy in terms of two-component optical conductivity

In access to optical spectroscopy of heavily underdoped detwinned YBa₂Cu₃O_y (YBCO) crystals, we re-examine the doping dependent evolution of infrared spectra in the CuO₂ plane of underdoped YBCO in terms of two-component optical conductivity. The extended Drude model analysis is applied to the two-component conductivity, and the results are compared with experimental data in the pseudogap state. We demonstrate that a model consisting of a Drude and Lorentz oscillator components reproduces characteristics of infrared spectra in underdoped YBCO.