MnxGe1－x稀磁半导体薄膜的结构研究

利用X 射线衍射(XRD)和X射线吸收精细结构(XAFS)方法研究了磁控共溅射方法制备的Mn_xGe_1-x薄膜样品的结构随掺杂磁性原子Mn含量的变化规律.XRD结果表明，在Mn的含量较低(7.0%)的Mn_0.07Ge_0.93样品中，只能观察到对应于多晶Ge的XRD衍射峰，而对Mn含量较高(25.0%, 36.0%)的Mn_0.25Ge_0.75和Mn关键词： 磁控溅射 XRD XAFS xGe_1-x稀磁半导体薄膜')" href="#">Mn_xGe_1-x稀磁半导体薄膜     

退火对Mn和N共掺杂的Zn0.88Mn0.12O:N薄膜特性的影响

以NH₃为掺N源,采用电子束反应蒸发技术生长了Mn和N共掺杂的Zn_1-xMn_xO:N薄膜,生长温度为300℃,然后在O₂气氛中400℃退火0.5 h.X射线衍射测量表明,Zn_0.88Mn_0.12O(Mn掺杂)薄膜或Zn_0.88Mn_0.12O:N(Mn和N共掺杂)薄膜仍具有单一晶相纤锌矿结构,未检测到杂质相 关键词： ZnO薄膜 Mn和N共掺杂 电学特性 磁特性     

常压MOCVD生长Ga2O3薄膜及其分析

以去离子水(H₂O)和三甲基镓(TMGa)为源材料,用常压MOCVD方法在蓝宝石(0001)面上生长出β-Ga₂O₃薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)以及二次离子质谱(SIMS)实验表征Ga₂O₃外延膜的质量.在X射线衍射谱中有一个强的Ga₂O₃(102)面衍射峰,其半峰全宽(FWHM)为0.25°,表明该Ga₂O₃外延膜是(102)择优取向.在二次离子质谱中除了C、H、O和Ga原子外,没有观测到其他原子.     

MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的Mn_xSi_1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8％和17％)样品中存在着Mn₄Si₇化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的Mn_xSi_1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn₄Si₇模型计算出的理论XANES谱才能够很好的重构出Mn_xSi_1-x样品的实验XANES谱.这些研究结果说明在Mn_xSi_1-x样品中,Mn原子主要是以镶嵌式的Mn₄Si₇化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子. 关键词： xSi_1-x磁性薄膜')" href="#">Mn_xSi_1-x磁性薄膜 分子束外延 XRD XANES     

外磁场对(Ga，Mn)As有效g因子的影响

利用时间分辨Kerr旋光技术测量低温下稀磁半导体Ga_0.937Mn_0.063As中光注入极化载流子的自旋进动信号,并观察到自旋极化载流子的有效g因子值随外磁场的增强而增大的反常现象.这归结于磁场导致局域化空穴转化为非局域化空穴,从而使自发磁化强度增强,有效g因子值增大.基于此物理图像,进一步给出了(Ga,Mn)As的有效g因子与外磁场的关系式. 关键词： 时间分辨Kerr旋光测量 Zeeman效应 Ruderman-Kittel-Kasuya-Yosida模型     

(Ga,Mn)As 体系中Mn自补偿效应的第一性原理研究

基于密度泛函理论的赝势平面波方法计算了处于填隙位置磁性原子(MnI)对(Ga,Mn) As体系电子结构和磁性的影响. 计算结果表明MnI在GaAs中是施主；代替Ga位的MnGa 与MnI的自旋按反铁磁序排列；静电相互作用使MnGa，MnI倾向于形成MnGa_MnI对. MnI的存在一方面补偿了(Ga,Mn)As中的空穴，降低了空穴浓度；同时还使邻近的MnG a失活. MnI的存在对获得高居里温度的(Ga,Mn)As是极为不利的. 关键词： (Ga Mn)As 稀磁半导体 密度泛函理论     

远红外光纤材料(MnF2)x(BaCl2)100-x玻璃结构的EXAFS和WAXS研究

本文用扩展X射线吸收谱(EXAFS)和X射线大角散射谱(WAXS)对远红外光纤材料复合卤化物玻璃(MnF₂)_x(BaCl₂)_166-x(x=65,60,55)的短程结构进行了研究。从MnK吸收限的EXAFS和样品的非晶衍射图,得到了Mn原子的近邻原子配位信息。结果表明F,Cl原子在Mn原子周围形成了混合配位的八面体(MnCl₂F₄),这些八面体以Mn—F键为桥键连成“之”字型 关键词：     

Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn_1-xCo_xO (x＝0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn₁-xCo_xO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn_1-xCo_xO 稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn_1-xCo_xO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn_1-xCo_xO产生室温铁磁性的主要原因. 关键词： 1-xCo_xO稀磁半导体')" href="#">Zn_1-xCo_xO稀磁半导体 X射线吸收精细结构谱 脉冲激光气相沉积法     

新型稀磁半导体Mn掺杂LiZnAs的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法, 对纯LiZnAs, Mn掺杂的LiZnAs, Li过量和不足下Mn掺杂的LiZnAs体系进行几何结构优化, 计算并对比分析了体系的电子结构、半金属性、光学性质及形成能.结果表明新型稀磁半导体Li (Zn_0.875Mn_0.125) As, Li_1.1 (Zn_0.875Mn_0.125) As和Li_0.9 (Zn_0.875Mn_0.125) As均表现为100%自旋注入, 材料均具有半金属性, Li过量和不足下体系的半金属性明显增强. Li过量可以提高体系的居里温度, 改善材料的导电性, 使体系的形成能降低. 说明LiZnAs半导体可以实现自旋和电荷注入机理的分离, 磁性和电性可以分别通过Mn的掺入和Li的含量进行调控. 进一步对比分析光学性质发现, 低能区的介电函数虚部和复折射率函数明显受到Li的化学计量数的影响. 关键词： Mn掺杂LiZnAs 电子结构 光学性质 第一性原理     

热处理过程对Cr75(Fe0.67Mn0.33)25合金磁性的影响

利用M?ssbauer谱和磁测量方法对经过适当热处理的Cr₇₅(Fe_0.67Mn_0.33)₂₅合金的磁性进行了研究．结果表明合金中原子的化学分布对合金的磁有序状态的形成起重要作用．通过热处理过程影响合金中的富Cr、富Fe原子集团，引起反铁磁、铁磁转变温度的升高．合金中的富Cr、富Fe原子集团导致合金中的磁相分离 关键词：     

退火处理Fe43Co43Hf7B6Cu1非晶合金的正电子湮没研究

对熔体急冷法制备的Fe₄₃Co₄₃Hf₇B₆Cu₁非晶合金进行了200,300,400和500 ℃保温30 min的退火处理,用正电子湮没寿命谱、X射线衍射、穆斯堡尔谱等方法研究了退火后试样的结构及结构缺陷变化.结果表明,在非晶合金的制备态,正电子主要在非晶基体相空位尺寸的自由体积中湮没,湮没寿命τ₁为158.4 ps,强度I₁关键词： 43Co₄₃Hf₇B₆Cu₁非晶')" href="#">Fe₄₃Co₄₃Hf₇B₆Cu₁非晶 退火处理 正电子湮没寿命 结构与结构缺陷     

Simulation of temperature-dependent material parameters and device performances for GaInAsSb thermophotovoltaic cell

Temperature-dependent material parameters and device performances of Ga_xIn_1−xAs_1−ySb_y TPV cells applied in low temperature (800–1200 °C) radiators are simulated using the PC-1D. As is well known, the optimum bandgap (E_g) decreases towards lower radiator temperatures. So far, the lowest achievable E_g of Ga_xIn_1−xAs_1−ySb_y at 300 K is 0.5 eV. We mainly considering the Ga_0.8In_0.2As_0.18Sb_0.82 (E_g = 0.5 eV) TPV cell. The effects of doping concentration and recombination mechanisms of the emitter layer on photovoltaic conversion efficiencies (η_cel) are analyzed in detail, and η_cel can be improved by optimizing doping concentration and suppressing carrier recombination. The effects of GaSb window layer on η_cel are also presented. It shows the type-II energy-band alignment GaSb(window)/GaInAsSb(emitter) heterostructure affect η_cel mainly through V_oc. For the first time, the effects of operating temperatures on device performances are analyzed based on temperature-dependent material parameters, and the temperature coefficients of the device performances are presented.     

Metal-insulator transition in electron-doped Ba1−x La x MnO3 compounds

Electron-doped (Ba_1−x La _x )MnO₃ compounds were prepared for x=0−0.5. Measurements of X-ray diffraction (XRD) at room temperature and temperature variation of dc electrical resistivity down to 20 K were carried out. Samples with x=0.2–0.5 exhibit metal-insulator (M-I) transition. The maximum M-I transition temperature (T _c) of 289 K was observed for 30% of La doping (x=0.3). XRD patterns of these samples (x=0.2−0.5) were analyzed using Rietveld refinement. These samples are found to be mostly in single-phase form with orthorhombic symmetry (space group Pbnm). We have found strong correlation between Mn-O-Mn bond angles and T _c of M-I transition. The resistivity data below T _c could be fitted to the expression ρ=ρ ₁+ρ ₂ T ² and this shows that double exchange interaction plays a major role even in Mn⁴⁺-rich compound. Above T _c the resistivity data were fitted to variable range hopping and small polaron models.     

哈斯勒合金Ni-Mn-Ga的马氏体相变和磁增强双向形状记忆效应

通过研究铁磁性金属间化合物Ni_2+xMn_1-xGa(x=-0.1,0,0.08,0.13,0.18,0.2)和Ni_2-xMn_1+x/2Ga_1+x/2(x=-0.1,0,0.04,0.06,0.1)两个系列多晶样品的交流磁化率随温度的变化行为,得到了化合物在不同组分下的马氏体相变温度TM和居里温度T_C.发现随着Ni成分的增加,前者的马氏体相变温度T_m增加,而居里温度T_C降低,后者的马氏体相变温度T_m和居里温度T_C均是先增大后减小.报道了T_m在室温附近的单晶样品Ni₅₂Mn₂₄Ga₂₄的磁场增强双向形状记忆效应.发现伴随着马氏体相变,样品在[001]方向可产生1.2%的收缩.如果在该方向施加1.2T的偏磁场可以使该应变值增大到4.0%.而垂直于[001]方向施加1.2T的偏磁场时,在[001]方向产生1.6%的膨胀.阐明了产生大应变的原因并非相界移动,而是单晶的杂散内应力小和外加磁场通过孪晶界移动使马氏体变体重组的共同结果. 关键词： 形状记忆效应 马氏体相变 2MnGa')" href="#">Ni₂MnGa     

Structural and physical properties of undoped and nickel-doped BaFe2-xNixAs2（x = 0,0.04） single crystals

<正>Single crystals of undoped and nickel-doped BaFe_(2-x)Ni_xAs_2(x=0,0.04) have been grown by FeAs self-flux method.The maximum dimension of the crystal is as large as ~ 1 cm along the ab plane.The crystalline topography of a cleaved crystal surface is examined by scanning electron microscope(SEM).By x-ray powder diffraction(XRD) experiments using pure silicon as an internal standard,precise unit cell parameters(tetragonal at room temperature) are determined:a = 3.9606(4) A(1 A=0.1 nm),c = 13.015(2) A for BaFe_(1.96)Ni_(0.04)As_2 and a = 3.9590(5) A,c = 13.024(1) A for BaFe_2As_2.DC magnetization and transport measurements are performed to check superconducting transition(T_c=15 K for x=0.04) and other subtle anomalies.For BaFe_(0.96)Ni_(0.04)As_2 crystal,the resistance curve at normal state shows two distinct anomalies associated with spin and structure transitions,and its magnetization data above ~ 91 K exhibit a linear temperature dependence due to spin density wave(SDW) instability.     

Double anion antisite in GaAs - the simplest member of EL2 family?

Properties of an aggregate composed of two nearest-neighbour As_Ga defects are examined. Such an aggregate behaves like a dimer in which the two constituents are weakly coupled giving rise to a double near-degeneracy of electronic states of the system. The system is unstable against the Jahn-Teller (J-T) distortion that couples pairs of nearly degenerate states. Usually the distortion is stabilized by localization of a single electron, or a pair of electrons, at one of the two As_Ga defects. If one of the two electrons is excited into theT ₂ resonant state of individual As_Ga then the vibronic coupling can be strong, and the resulting J-T effect can give rise to a metastable behaviour of the system. It is argued that the (As_Ga)₂ aggregate is the best candidate for EL2 centre in GaAs crystals.     

Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes

In this paper, a simulation and analysis on the short-circuit current density (J_sc) of the P-GaSb window/P-Ga_xIn_1−xAs_1−ySb_y emitter/N-Ga_xIn_1−xAs_1−ySb_y base/N-GaSb substrate structure is performed. The simulations are carried out with a fixed spectral control filter at a radiator temperature (T_rad) of 950 °C, diode temperature (T_dio) of 27 °C and diode bandgap (E_g) of 0.5 eV. The radiation photons are injected from the front P-side. Expressions for minority carrier mobility and absorption coefficient of Ga_xIn_1−xAs_1−ySb_y semiconductors are derived from Caughey–Thomas and Adachi’s model, respectively. The P-Ga_xIn_1−xAs_1−ySb_y emitter with a much longer diffusion length is adopted as the main optical absorption region and the N-Ga_xIn_1−xAs_1−ySb_y base region contribute little to J_sc. The effect of P-GaSb window and P-Ga_xIn_1−xAs_1−ySb_y emitter region parameters on J_sc is mainly analyzed. Dependence of J_sc on thickness and carrier concentration of the window are analyzed; these two parameters need to be properly selected to improve J_sc. Contributions from the main carrier recombination mechanisms in the emitter region are considered; J_sc can be improved by suppressing the carrier recombination rate. Dependence of J_sc on the carrier concentration and layer thickness of the emitter P-region are also analyzed; these two parameters have strong effect on J_sc. Moreover, adding a back surface reflector (BSR) to the diode can improve J_sc. The simulated results are compared with the available experimental data and are found to be in good agreement. These theoretical simulations help us to better understand the electro-optical behavior of Ga_xIn_1−xAs_1−ySb_y TPV diode and can be utilized for performance enhancement through optimization of the device structure.     

Correlation of electrical properties with magnetic properties for ferromagnetic (Ga1−xMnx)As epilayer

The correlation of electrical properties with magnetic properties for the (Ga_1−xMn_x)As epilayer was investigated. For electrical transport measurements, it was clearly observed that the electrical mobility is increased with decreasing temperatures for both the (Ga_0.974Mn_0.026)As/LT-GaAs epilayer and the LT-GaAs:Be epilayer. However, a different behavior was observed at the cryogenic temperature region. The electrical mobility of (Ga_0.974Mn_0.026)As/LT-GaAs epilayer increases with decreasing temperature, while the mobility of LT-GaAs:Be epilayer decreases with decreasing temperature. In Arrhenius plots of carrier mobility for the (Ga_0.974Mn_0.026)As/LT-GaAs epilayer, the critical point is observed at 69 K, and this value is almost the same as the T_C. This result indicates that the carrier transport in ferromagnetic (Ga_1−xMn_x)As epilayers might be related to a spin-ordering effect because the spins will be arranged with the same direction below the T_C, and this will lead to reducing the probability of spin-disorder scattering. Therefore, the observation of a gradual drop below the T_C in the temperature-dependent resistivity curve is expected to be a result of the spin-ordering effect in the ferromagnetic (Ga_0.974Mn_0.026)As/LT-GaAs epilayer.     

The experimental and theoretical investigation of vibration spectra in ferroelectric semiconductor SbSBrxI1−x crystals

The vapor grown SbSBr_xI_1−x (x=0.1; 0.5; 0.9) crystals with clear mirror surfaces have been used for infrared reflection measurements with Fourier spectrometer. The vibration frequencies along c(z)-axis have been derived from Kramers–Kroning and optical parameters fitting analysis of the experimental reflectivity spectra at T=300 K. The theoretical vibration spectra of SbSBr_xS_1−x (x=0.1; 0.5; 0.9) crystals in paraelectric phase (T=300 K) along c(z)-axis have been determined in quasiharmonic approximation by diagonalization of dynamical matrix. The theoretical vibration spectra of these crystals in a–b(x−y) plane have been determined in harmonic approximation. In this work we discuss the nature of anharmonism in SbSBr_xI_1−x crystals along the c(z)-axis.     

Hydrostatic pressure study of the structural phase transitions and superconductivity in single crystals of (Ba1−xKx)Fe2As2 (x=0 and 0.45) and CaFe2As2

We studied the effect of hydrostatic pressure (P) on the structural phase transitions and superconductivity in the ternary and pseudo-ternary iron arsenides CaFe₂As₂, BaFe₂As₂, and (Ba_0.55K_0.45)Fe₂As₂, by means of measurements of electrical resistivity (ρ) in the 1.8-300 K temperature (T) range, pressures up to 20 kbar, and magnetic fields up to 9 T. CaFe₂As₂ and BaFe₂As₂ (lightly doped with Sn) display structural phase transitions near 170 and 85 K, respectively, and do not exhibit superconductivity in ambient pressure, while K-doped (Ba_0.55K_0.45)Fe₂As₂ is superconducting for T<30 K. The effect of pressure on BaFe₂As₂ is to shift the onset of the crystallographic transformation down in temperature at the rate of ~−1.04 K/kbar, while shifting the whole ρ(T) curves downward, whereas its effect on superconducting (Ba_0.55K_0.45)Fe₂As₂ is to shift the onset of superconductivity to lower temperatures at the rate of ~−0.21 K/kbar. The effect of pressure on CaFe₂As₂ is first to suppress the crystallographic transformation and induce superconductivity with onset near 12 K very rapidly, i.e., for P<5 kbar. However, higher pressures bring about another phase transformation characterized by reduced-resistivity, and the suppression of superconductivity, confining superconductivity to a narrow pressure dome centered near 5 kbar. Upper critical field (H_c2) data in (Ba_0.55K_0.45)Fe₂As₂ and CaFe₂As₂ are discussed.